Einzelne Bipolartransistoren

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Einzelne Bipolartransistoren

TomatoElec liefert einzelne Bipolartransistoren für Industrie, Automotive, Kommunikation, Steuerung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne BJT-Transistorprodukte für Verstärkungs-, Schalt- und Signalsteuerungsschaltungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Bipolartransistoren und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Transistoren, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SA1930(LBS2MATQ,M

2SA1930(LBS2MATQ,M

TRANS PNP 180V 2A TO-220NIS

Toshiba Semiconductor and Storage

3,738 -
RFQ
2SA1930(LBS2MATQ,M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1930(ONK,Q,M)

2SA1930(ONK,Q,M)

TRANS PNP 180V 2A TO-220NIS

Toshiba Semiconductor and Storage

9,190 -
RFQ
2SA1930(ONK,Q,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1930,CKQ(J

2SA1930,CKQ(J

TRANS PNP 180V 2A TO-220NIS

Toshiba Semiconductor and Storage

8,736 -
RFQ
2SA1930,CKQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1930,LBS2DIAQ(J

2SA1930,LBS2DIAQ(J

TRANS PNP 180V 2A TO-220NIS

Toshiba Semiconductor and Storage

6,110 -
RFQ
2SA1930,LBS2DIAQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1930,ONKQ(J

2SA1930,ONKQ(J

TRANS PNP 180V 2A TO-220NIS

Toshiba Semiconductor and Storage

2,343 -
RFQ
2SA1930,ONKQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1930,Q(J

2SA1930,Q(J

TRANS PNP 180V 2A TO-220NIS

Toshiba Semiconductor and Storage

7,386 -
RFQ
2SA1930,Q(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1931(NOMARK,A,Q

2SA1931(NOMARK,A,Q

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

3,902 -
RFQ
2SA1931(NOMARK,A,Q

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,BOSCHQ(J

2SA1931,BOSCHQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

3,353 -
RFQ
2SA1931,BOSCHQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,KEHINQ(M

2SA1931,KEHINQ(M

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

3,059 -
RFQ
2SA1931,KEHINQ(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,NETQ(J

2SA1931,NETQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

3,236 -
RFQ
2SA1931,NETQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,NIKKIQ(J

2SA1931,NIKKIQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

5,004 -
RFQ
2SA1931,NIKKIQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,NSEIKIQ(J

2SA1931,NSEIKIQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

5,314 -
RFQ
2SA1931,NSEIKIQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,Q(J

2SA1931,Q(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

9,557 -
RFQ
2SA1931,Q(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1931,SINFQ(J

2SA1931,SINFQ(J

TRANS PNP 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

5,844 -
RFQ
2SA1931,SINFQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 5 A 50 V 400mV @ 200mA, 2A 1µA (ICBO) 100 @ 1A, 1V 2 W 60MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1972,F(J

2SA1972,F(J

TRANS PNP 400V 0.5A TO-92MOD

Toshiba Semiconductor and Storage

6,547 -
RFQ
2SA1972,F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 500 mA 400 V 1V @ 10mA, 100mA 10µA (ICBO) 140 @ 20mA, 5V 900 mW 35MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA1972,T6WNLF(J

2SA1972,T6WNLF(J

TRANS PNP 400V 0.5A TO-92MOD

Toshiba Semiconductor and Storage

5,207 -
RFQ
2SA1972,T6WNLF(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 500 mA 400 V 1V @ 10mA, 100mA 10µA (ICBO) 140 @ 20mA, 5V 900 mW 35MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA949-O(TE6,F,M)

2SA949-O(TE6,F,M)

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

4,393 -
RFQ
2SA949-O(TE6,F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y(JVC1,F,M)

2SA949-Y(JVC1,F,M)

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

4,343 -
RFQ
2SA949-Y(JVC1,F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y(T6JVC1,FM

2SA949-Y(T6JVC1,FM

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

6,539 -
RFQ
2SA949-Y(T6JVC1,FM

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA949-Y(T6ONK1,FM

2SA949-Y(T6ONK1,FM

TRANS PNP 150V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

9,664 -
RFQ
2SA949-Y(T6ONK1,FM

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 50 mA 150 V 800mV @ 1mA, 10A 100nA (ICBO) 70 @ 10mA, 5V 800 mW 120MHz 150°C (TJ) - - Through Hole TO-92MOD
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