Einzelne Bipolartransistoren

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Einzelne Bipolartransistoren

TomatoElec liefert einzelne Bipolartransistoren für Industrie, Automotive, Kommunikation, Steuerung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne BJT-Transistorprodukte für Verstärkungs-, Schalt- und Signalsteuerungsschaltungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Bipolartransistoren und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Transistoren, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SA1680,T6F(J

2SA1680,T6F(J

TRANS PNP 50V 2A TO-92MOD

Toshiba Semiconductor and Storage

5,863 -
RFQ
2SA1680,T6F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 2 A 50 V 500mV @ 50mA, 1A 1µA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA1761,F(J

2SA1761,F(J

TRANS PNP 50V 3A TO-92MOD

Toshiba Semiconductor and Storage

8,910 -
RFQ
2SA1761,F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA1761,T6F(J

2SA1761,T6F(J

TRANS PNP 50V 3A TO-92MOD

Toshiba Semiconductor and Storage

8,962 -
RFQ
2SA1761,T6F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA1761,T6F(M

2SA1761,T6F(M

TRANS PNP 50V 3A TO-92MOD

Toshiba Semiconductor and Storage

8,082 -
RFQ
2SA1761,T6F(M

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete PNP 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SA1837(LBSAN,F,M)

2SA1837(LBSAN,F,M)

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

3,525 -
RFQ
2SA1837(LBSAN,F,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837(PAIO,F,M)

2SA1837(PAIO,F,M)

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

7,377 -
RFQ
2SA1837(PAIO,F,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,F(J

2SA1837,F(J

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

8,312 -
RFQ
2SA1837,F(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,HFEMBJF(J

2SA1837,HFEMBJF(J

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

9,428 -
RFQ
2SA1837,HFEMBJF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,HFEYHF(J

2SA1837,HFEYHF(J

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

4,205 -
RFQ
2SA1837,HFEYHF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,HFEYHF(M

2SA1837,HFEYHF(M

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

6,741 -
RFQ
2SA1837,HFEYHF(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,NSEIKIF(J

2SA1837,NSEIKIF(J

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

3,091 -
RFQ
2SA1837,NSEIKIF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,S1CSF(J

2SA1837,S1CSF(J

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

9,234 -
RFQ
2SA1837,S1CSF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,TOA1F(J

2SA1837,TOA1F(J

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

2,898 -
RFQ
2SA1837,TOA1F(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,WNLF(J

2SA1837,WNLF(J

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

8,786 -
RFQ
2SA1837,WNLF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,YHF(J

2SA1837,YHF(J

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

9,237 -
RFQ
2SA1837,YHF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1837,YHF(M

2SA1837,YHF(M

TRANS PNP 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

9,828 -
RFQ
2SA1837,YHF(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 70MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1869-Y(JKT,Q,M)

2SA1869-Y(JKT,Q,M)

TRANS PNP 50V 3A TO-220NIS

Toshiba Semiconductor and Storage

3,429 -
RFQ
2SA1869-Y(JKT,Q,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 3 A 50 V 600mV @ 200mA, 2A 1µA (ICBO) 70 @ 500mA, 2V 10 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1869-Y(Q,M)

2SA1869-Y(Q,M)

TRANS PNP 50V 3A TO-220NIS

Toshiba Semiconductor and Storage

9,664 -
RFQ
2SA1869-Y(Q,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 3 A 50 V 600mV @ 200mA, 2A 1µA (ICBO) 70 @ 500mA, 2V 10 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1869-Y,MTSAQ(J

2SA1869-Y,MTSAQ(J

TRANS PNP 50V 3A TO-220NIS

Toshiba Semiconductor and Storage

4,032 -
RFQ
2SA1869-Y,MTSAQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 3 A 50 V 600mV @ 200mA, 2A 1µA (ICBO) 70 @ 500mA, 2V 10 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SA1869-Y,Q(J

2SA1869-Y,Q(J

TRANS PNP 50V 3A TO-220NIS

Toshiba Semiconductor and Storage

5,166 -
RFQ
2SA1869-Y,Q(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete PNP 3 A 50 V 600mV @ 200mA, 2A 1µA (ICBO) 70 @ 500mA, 2V 10 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
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