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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPD65R380E6ATMA1

    IPD65R380E6ATMA1

    MOSFET N-CH 650V 10.6A TO252-3

    Infineon Technologies

    		 477 -
    RFQ
    		IPD65R380E6ATMA1

    Datenblatt

         		CoolMOS™ E6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    AOTF12N60L

    AOTF12N60L

    MOSFET N-CH 600V 12A TO220F

    Alpha & Omega Semiconductor Inc.

    		 343 -
    RFQ
    		AOTF12N60L

    Datenblatt

         		- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 550mOhm @ 6A, 10V 4.5V @ 250µA 50 nC @ 10 V ±30V 2100 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
    FDS8870

    FDS8870

    MOSFET N-CH 30V 18A 8SOIC

    onsemi

    		 2,491 -
    RFQ
    		FDS8870

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.2mOhm @ 18A, 10V 2.5V @ 250µA 112 nC @ 10 V ±20V 4615 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IRF630STRLPBF

    IRF630STRLPBF

    MOSFET N-CH 200V 9A D2PAK

    Vishay Siliconix

    		 1,233 -
    RFQ
    		IRF630STRLPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRF630SPBF

    IRF630SPBF

    MOSFET N-CH 200V 9A D2PAK

    Vishay Siliconix

    		 944 -
    RFQ
    		IRF630SPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    TPH8R80ANH,L1Q

    TPH8R80ANH,L1Q

    MOSFET N CH 100V 32A 8-SOP

    Toshiba Semiconductor and Storage

    		 29,285 -
    RFQ
    		TPH8R80ANH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 8.8mOhm @ 16A, 10V 4V @ 500µA 33 nC @ 10 V ±20V 2800 pF @ 50 V - 1.6W (Ta), 61W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    SI4114DY-T1-E3

    SI4114DY-T1-E3

    MOSFET N-CH 20V 20A 8SO

    Vishay Siliconix

    		 10,990 -
    RFQ
    		SI4114DY-T1-E3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V 2.1V @ 250µA 95 nC @ 10 V ±16V 3700 pF @ 10 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    PSMN1R7-30YL,115

    PSMN1R7-30YL,115

    MOSFET N-CH 30V 100A LFPAK56

    Nexperia USA Inc.

    		 2,278 -
    RFQ
    		PSMN1R7-30YL,115

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1.7mOhm @ 15A, 10V 2.15V @ 1mA 77.9 nC @ 10 V ±20V 5057 pF @ 12 V - 109W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    SISS5710DN-T1-GE3

    SISS5710DN-T1-GE3

    N-CHANNEL 150 V (D-S) MOSFET POW

    Vishay Siliconix

    		 5,707 -
    RFQ
    		SISS5710DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 7.2A (Ta), 26.2A (Tc) 7.5V, 10V 31.5mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 770 pF @ 75 V - 4.1W (Ta), 54.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    SQJA78EP-T1_GE3

    SQJA78EP-T1_GE3

    MOSFET N-CH 80V 72A PPAK SO-8

    Vishay Siliconix

    		 2,797 -
    RFQ
    		SQJA78EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 72A (Tc) 10V 5.3mOhm @ 10A, 10V 3.3V @ 250µA 95 nC @ 10 V ±20V 5100 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    STP5N80K5

    STP5N80K5

    MOSFET N-CH 800V 4A TO220

    STMicroelectronics

    		 1,304 -
    RFQ
    		STP5N80K5

    Datenblatt

         		MDmesh™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.75Ohm @ 2A, 10V 5V @ 100µA 5 nC @ 10 V ±30V 177 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    NVMFS5C442NLAFT1G

    NVMFS5C442NLAFT1G

    MOSFET N-CH 40V 29A/130A 5DFN

    onsemi

    		 1,182 -
    RFQ
    		NVMFS5C442NLAFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 130A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    R6515KNX3C16

    R6515KNX3C16

    650V 15A, TO-220AB, HIGH-SPEED S

    Rohm Semiconductor

    		 399 -
    RFQ
    		R6515KNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 161W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    BSP135H6906XTSA1

    BSP135H6906XTSA1

    MOSFET N-CH 600V 120MA SOT223-4

    Infineon Technologies

    		 14,161 -
    RFQ
    		BSP135H6906XTSA1

    Datenblatt

         		SIPMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-SOT223-4
    TSM160N10LCR RLG

    TSM160N10LCR RLG

    MOSFET N-CH 100V 46A 8PDFN

    Taiwan Semiconductor Corporation

    		 10,449 -
    RFQ
    		TSM160N10LCR RLG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 46A (Tc) 4.5V, 10V 16mOhm @ 8A, 10V 2.5V @ 250µA 73 nC @ 10 V ±20V 4431 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
    IRFH5250TRPBF

    IRFH5250TRPBF

    MOSFET N-CH 25V 45A/100A 8PQFN

    Infineon Technologies

    		 9,000 -
    RFQ
    		IRFH5250TRPBF

    Datenblatt

         		HEXFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 45A (Ta), 100A (Tc) 4.5V, 10V 1.15mOhm @ 50A, 10V 2.35V @ 150µA 110 nC @ 10 V ±20V 7174 pF @ 13 V - 3.6W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    FDMC7660DC

    FDMC7660DC

    MOSFET N-CH 30V 30A/40A DLCOOL33

    onsemi

    		 5,796 -
    RFQ
    		FDMC7660DC

    Datenblatt

         		Dual Cool™, PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 40A (Tc) 4.5V, 10V 2.2mOhm @ 22A, 10V 2.5V @ 250µA 76 nC @ 10 V ±20V 5170 pF @ 15 V - 3W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Dual Cool ™ 33
    FCD260N65S3

    FCD260N65S3

    MOSFET N-CH 650V 12A TO252

    onsemi

    		 2,325 -
    RFQ
    		FCD260N65S3

    Datenblatt

         		SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 1.2mA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    STP60NF06FP

    STP60NF06FP

    MOSFET N-CH 60V 30A TO220FP

    STMicroelectronics

    		 978 -
    RFQ
    		STP60NF06FP

    Datenblatt

         		STripFET™ II TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 16mOhm @ 30A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1810 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220FP
    STP4NK60Z

    STP4NK60Z

    MOSFET N-CH 600V 4A TO220AB

    STMicroelectronics

    		 552 -
    RFQ
    		STP4NK60Z

    Datenblatt

         		SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 26 nC @ 10 V ±30V 510 pF @ 25 V - 70W (Tc) 150°C (TJ) - - Through Hole TO-220
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