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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRFR1N60APBF

    IRFR1N60APBF

    MOSFET N-CH 600V 1.4A DPAK

    Vishay Siliconix

    		 3,041 -
    RFQ
    		IRFR1N60APBF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    FDPF18N20FT

    FDPF18N20FT

    MOSFET N-CH 200V 18A TO220F

    onsemi

    		 1,950 -
    RFQ
    		FDPF18N20FT

    Datenblatt

         		UniFET™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 41W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IRFU9214PBF

    IRFU9214PBF

    MOSFET P-CH 250V 2.7A TO251AA

    Vishay Siliconix

    		 1,395 -
    RFQ
    		IRFU9214PBF

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 3Ohm @ 1.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 220 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
    IRFZ20PBF-BE3

    IRFZ20PBF-BE3

    MOSFET N-CH 50V 15A TO220AB

    Vishay Siliconix

    		 459 -
    RFQ
    		IRFZ20PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) - 100mOhm @ 10A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 860 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SISS32ADN-T1-GE3

    SISS32ADN-T1-GE3

    MOSFET N-CH 80V 17.4A/63A PPAK

    Vishay Siliconix

    		 12,776 -
    RFQ
    		SISS32ADN-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 17.4A (Ta), 63A (Tc) 7.5V, 10V 7.3mOhm @ 10A, 10V 3.6V @ 250µA 36 nC @ 10 V ±20V 1520 pF @ 40 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    FCD4N60TM

    FCD4N60TM

    MOSFET N-CH 600V 3.9A DPAK

    onsemi

    		 10,172 -
    RFQ
    		FCD4N60TM

    Datenblatt

         		SuperFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.9A (Tc) 10V 1.2Ohm @ 2A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 540 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    BUK768R1-40E,118

    BUK768R1-40E,118

    MOSFET N-CH 40V 75A D2PAK

    Nexperia USA Inc.

    		 4,672 -
    RFQ
    		BUK768R1-40E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 7.2mOhm @ 20A, 10V 4V @ 1mA 24 nC @ 10 V ±20V 1730 pF @ 25 V - 96W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    IPA95R1K2P7XKSA1

    IPA95R1K2P7XKSA1

    MOSFET N-CH 950V 6A TO220

    Infineon Technologies

    		 484 -
    RFQ
    		IPA95R1K2P7XKSA1

    Datenblatt

         		CoolMOS™ P7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 950 V 6A (Tc) 10V 1.2Ohm @ 2.7A, 10V 3.5V @ 140µA 15 nC @ 10 V ±20V 478 pF @ 400 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    TPH8R008NH,L1Q

    TPH8R008NH,L1Q

    MOSFET N-CH 80V 34A 8SOP

    Toshiba Semiconductor and Storage

    		 8,924 -
    RFQ
    		TPH8R008NH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 34A (Tc) 10V 8mOhm @ 17A, 10V 4V @ 500µA 35 nC @ 10 V ±20V 3000 pF @ 40 V - 1.6W (Ta), 61W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    IRFB7537PBF

    IRFB7537PBF

    MOSFET N-CH 60V 173A TO220AB

    Infineon Technologies

    		 3,801 -
    RFQ
    		IRFB7537PBF

    Datenblatt

         		HEXFET®, StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRFH7004TRPBF

    IRFH7004TRPBF

    MOSFET N-CH 40V 100A 8PQFN

    Infineon Technologies

    		 3,690 -
    RFQ
    		IRFH7004TRPBF

    Datenblatt

         		HEXFET®, StrongIRFET™ 8-VQFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.9V @ 150µA 194 nC @ 10 V ±20V 6419 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IRFBE20PBF

    IRFBE20PBF

    MOSFET N-CH 800V 1.8A TO220AB

    Vishay Siliconix

    		 1,480 -
    RFQ
    		IRFBE20PBF

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    STD11N60DM2

    STD11N60DM2

    MOSFET N-CH 650V 10A DPAK

    STMicroelectronics

    		 1,354 -
    RFQ
    		STD11N60DM2

    Datenblatt

         		MDmesh™ DM2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 420mOhm @ 5A, 10V 5V @ 250µA 16.5 nC @ 10 V ±25V 614 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    SQJ488EP-T1_BE3

    SQJ488EP-T1_BE3

    MOSFET N-CH 100V 42A PPAK SO-8

    Vishay Siliconix

    		 5,700 -
    RFQ
    		SQJ488EP-T1_BE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 21mOhm @ 7.1A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 978 pF @ 50 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    SQJ488EP-T1_GE3

    SQJ488EP-T1_GE3

    MOSFET N-CH 100V 42A PPAK SO-8

    Vishay Siliconix

    		 3,878 -
    RFQ
    		SQJ488EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 4.5V, 10V 21mOhm @ 7.4A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 979 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    SQJ403EP-T1_GE3

    SQJ403EP-T1_GE3

    MOSFET P-CH 30V 30A PPAK SO-8

    Vishay Siliconix

    		 3,662 -
    RFQ
    		SQJ403EP-T1_GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 109 nC @ 10 V ±20V 4500 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    SQJ182EP-T1_GE3

    SQJ182EP-T1_GE3

    AUTOMOTIVE N-CHANNEL 80 V (D-S)

    Vishay Siliconix

    		 3,000 -
    RFQ
    		SQJ182EP-T1_GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 210A (Tc) 10V 5mOhm @ 15A, 10V 3.5V @ 250µA 96 nC @ 10 V ±20V 5392 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    SQR70090ELR_GE3

    SQR70090ELR_GE3

    MOSFET N-CH 100V 86A DPAK

    Vishay Siliconix

    		 1,788 -
    RFQ
    		SQR70090ELR_GE3

    Datenblatt

         		TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 86A (Tc) 4.5V, 10V 8.7mOhm @ 25A, 10V 2.5V @ 250µA 65 nC @ 10 V ±20V 3500 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    SUD70090E-GE3

    SUD70090E-GE3

    MOSFET N-CH 100V 50A TO252

    Vishay Siliconix

    		 1,418 -
    RFQ
    		SUD70090E-GE3

    Datenblatt

         		ThunderFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 7.5V, 10V 8.9mOhm @ 20A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 1950 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    RSS100N03HZGTB

    RSS100N03HZGTB

    NCH 30V 10A AUTOMOTIVE POWER MOS

    Rohm Semiconductor

    		 904 -
    RFQ
    		RSS100N03HZGTB

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 13.3mOhm @ 10A, 10V 2.5V @ 1mA 20 nC @ 5 V ±20V 1070 pF @ 10 V - 2W (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOP
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