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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PSMN1R2-30YLDX

    PSMN1R2-30YLDX

    MOSFET N-CH 30V 100A LFPAK56

    Nexperia USA Inc.

    		 118 -
    RFQ
    		PSMN1R2-30YLDX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1.24mOhm @ 25A, 10V 2.2V @ 1mA 68 nC @ 10 V ±20V 4616 pF @ 15 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    SIHP15N50E-GE3

    SIHP15N50E-GE3

    MOSFET N-CH 500V 14.5A TO220AB

    Vishay Siliconix

    		 11,356 -
    RFQ
    		SIHP15N50E-GE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    BUK9Y3R0-40E,115

    BUK9Y3R0-40E,115

    MOSFET N-CH 40V 100A LFPAK56

    Nexperia USA Inc.

    		 3,434 -
    RFQ
    		BUK9Y3R0-40E,115

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V 2.5mOhm @ 25A, 10V 2.1V @ 1mA 35.5 nC @ 5 V ±10V 5962 pF @ 25 V - 194W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    DMP4011SPSQ-13

    DMP4011SPSQ-13

    MOSFET P-CH 40V PWRDI5060

    Diodes Incorporated

    		 1,440 -
    RFQ
    		DMP4011SPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 11.7A (Ta), 76A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2747 pF @ 20 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
    IPD055N08NF2SATMA1

    IPD055N08NF2SATMA1

    MOSFET

    Infineon Technologies

    		 1,240 -
    RFQ
    		IPD055N08NF2SATMA1

    Datenblatt

         		StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 17A (Ta), 98A (Tc) 6V, 10V 5.5mOhm @ 60A, 10V 3.8V @ 55µA 54 nC @ 10 V ±20V 2500 pF @ 40 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    STF100N6F7

    STF100N6F7

    MOSFET N-CH 60V 46A TO220FP

    STMicroelectronics

    		 750 -
    RFQ
    		STF100N6F7

    Datenblatt

         		STripFET™ F7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 46A (Tc) 10V 5.6mOhm @ 23A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1980 pF @ 25 V - 25W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220FP
    FDMS86540

    FDMS86540

    MOSFET N-CH 60V 20A/50A 8PQFN

    onsemi

    		 27,443 -
    RFQ
    		FDMS86540

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 50A (Tc) 8V, 10V 3.4mOhm @ 20A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 6435 pF @ 30 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IPD30N08S2L21ATMA1

    IPD30N08S2L21ATMA1

    MOSFET N-CH 75V 30A TO252-3

    Infineon Technologies

    		 19,366 -
    RFQ
    		IPD30N08S2L21ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 30A (Tc) 4.5V, 10V 20.5mOhm @ 25A, 10V 2V @ 80µA 72 nC @ 10 V ±20V 1650 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    SPA06N80C3XKSA1

    SPA06N80C3XKSA1

    MOSFET N-CH 800V 6A TO220-FP

    Infineon Technologies

    		 11,995 -
    RFQ
    		SPA06N80C3XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
    MSJU04N80A-TP

    MSJU04N80A-TP

    N-CHANNEL MOSFET,DPAK

    Micro Commercial Co

    		 4,682 -
    RFQ
    		MSJU04N80A-TP

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A 10V 1.3Ohm @ 2.5A, 10V 4.5V @ 250µA 11.5 nC @ 10 V ±20V 396 pF @ 100 V - 88W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NP60N04VDK-E1-AY

    NP60N04VDK-E1-AY

    POWER TRS2

    Renesas Electronics Corporation

    		 4,426 -
    RFQ
    		NP60N04VDK-E1-AY

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.85mOhm @ 30A, 10V 2.5V @ 250µA 63 nC @ 10 V ±20V 3680 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C Automotive AEC-Q101 Surface Mount TO-252 (MP-3ZP)
    BUK7M3R3-40HX

    BUK7M3R3-40HX

    MOSFET N-CH 40V 80A LFPAK33

    Nexperia USA Inc.

    		 1,584 -
    RFQ
    		BUK7M3R3-40HX

    Datenblatt

         		- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.3mOhm @ 25A, 10V 3.6V @ 1mA 45 nC @ 10 V +20V, -10V 3037 pF @ 25 V - 101W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
    NTMFS5C628NT1G

    NTMFS5C628NT1G

    MOSFET N-CH 60V 28A/150A 5DFN

    onsemi

    		 1,526 -
    RFQ
    		NTMFS5C628NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 10V 3mOhm @ 27A, 10V 4V @ 135µA 34 nC @ 10 V ±20V 2630 pF @ 30 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    IRFH5210TRPBF

    IRFH5210TRPBF

    MOSFET N-CH 100V 10A/55A 8PQFN

    Infineon Technologies

    		 8,349 -
    RFQ
    		IRFH5210TRPBF

    Datenblatt

         		HEXFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 55A (Tc) 10V 14.9mOhm @ 33A, 10V 4V @ 100µA 59 nC @ 10 V ±20V 2570 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IPI086N10N3GXKSA1

    IPI086N10N3GXKSA1

    MOSFET N-CH 100V 80A TO262-3

    Infineon Technologies

    		 242 -
    RFQ
    		IPI086N10N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    TPH5R906NH,L1Q

    TPH5R906NH,L1Q

    MOSFET N-CH 60V 28A 8SOP

    Toshiba Semiconductor and Storage

    		 24,969 -
    RFQ
    		TPH5R906NH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta) 10V 5.9mOhm @ 14A, 10V 4V @ 300µA 38 nC @ 10 V ±20V 3100 pF @ 30 V - 1.6W (Ta), 57W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
    STD3NK80ZT4

    STD3NK80ZT4

    MOSFET N-CH 800V 2.5A DPAK

    STMicroelectronics

    		 6,975 -
    RFQ
    		STD3NK80ZT4

    Datenblatt

         		SuperMESH™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 4.5Ohm @ 1.25A, 10V 4.5V @ 50µA 19 nC @ 10 V ±30V 485 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    TK290P60Y,RQ

    TK290P60Y,RQ

    MOSFET N-CH 600V 11.5A DPAK

    Toshiba Semiconductor and Storage

    		 3,958 -
    RFQ
    		TK290P60Y,RQ

    Datenblatt

         		DTMOSV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 100W (Tc) 150°C (TJ) - - Surface Mount DPAK
    IRFBE30PBF-BE3

    IRFBE30PBF-BE3

    MOSFET N-CH 800V 4.1A TO220AB

    Vishay Siliconix

    		 2,647 -
    RFQ
    		IRFBE30PBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) - 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SISS80DN-T1-GE3

    SISS80DN-T1-GE3

    MOSFET N-CH 20V 58.3A/210A PPAK

    Vishay Siliconix

    		 11,696 -
    RFQ
    		SISS80DN-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 58.3A (Ta), 210A (Tc) 2.5V, 10V 0.92mOhm @ 10A, 10V 1.5V @ 250µA 122 nC @ 10 V +12V, -8V 6450 pF @ 10 V - 5W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
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