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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVMFS5C404NWFT1G-M

    NVMFS5C404NWFT1G-M

    MOSFET N-CH 40V 53A/378A 5DFN

    onsemi

    		 3,247 -
    RFQ
    		NVMFS5C404NWFT1G-M Datenblatt - 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 378A (Tc) 10V 0.7mOhm @ 50A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 8400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    IRF9383MTRPBF

    IRF9383MTRPBF

    IRF9383 - 20V-250V P-CHANNEL POW

    International Rectifier

    		 5,573 -
    RFQ
    		IRF9383MTRPBF Datenblatt HEXFET® DirectFET™ Isometric MX Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 160A (Tc) 4.5V, 10V 2.9mOhm @ 22A, 10V 2.4V @ 150µA 130 nC @ 10 V ±20V 7305 pF @ 15 V - 2.1W (Ta), 113W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
    FCH35N60

    FCH35N60

    MOSFET N-CH 600V 35A TO247-3

    Fairchild Semiconductor

    		 8,123 -
    RFQ
    		FCH35N60 Datenblatt SuperMOS™ TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 98mOhm @ 17.5A, 10V 5V @ 250µA 181 nC @ 10 V ±30V 6640 pF @ 25 V - 312.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
    AUIRF3710ZSTRR

    AUIRF3710ZSTRR

    MOSFET N-CH 100V 59A D2PAK

    International Rectifier

    		 5,896 -
    RFQ
    		AUIRF3710ZSTRR Datenblatt HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) - 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V - 2900 pF @ 25 V - - - - - Surface Mount PG-TO263-3
    AUIRF7737L2TR

    AUIRF7737L2TR

    MOSFET N-CH 40V 31A/156A DIRECT

    International Rectifier

    		 3,113 -
    RFQ
    		AUIRF7737L2TR Datenblatt HEXFET® DirectFET™ Isometric L6 Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 156A (Tc) 10V 1.9mOhm @ 94A, 10V 4V @ 150µA 134 nC @ 10 V ±20V 5469 pF @ 25 V - 3.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DIRECTFET L6
    FDD6530A

    FDD6530A

    MOSFET N-CH 20V 21A TO252

    Fairchild Semiconductor

    		 3,876 -
    RFQ
    		FDD6530A Datenblatt PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 21A (Ta) 2.5V, 4.5V 32mOhm @ 8A, 4.5V 1.2V @ 250µA 9 nC @ 4.5 V ±8V 710 pF @ 10 V - 3.3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    FDS86540

    FDS86540

    SMALL SIGNAL FIELD-EFFECT TRANSI

    Fairchild Semiconductor

    		 8,040 -
    RFQ
    		FDS86540 Datenblatt PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta) 8V, 10V 4.5mOhm @ 18A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 6410 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IRF3709PBF

    IRF3709PBF

    IRF3709 - 12V-300V N-CHANNEL POW

    International Rectifier

    		 2,576 -
    RFQ
    		IRF3709PBF Datenblatt HEXFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IRFH7440TRPBF

    IRFH7440TRPBF

    IRFH7440 - 12V-300V N-CHANNEL PO

    International Rectifier

    		 2,758 -
    RFQ
    		IRFH7440TRPBF Datenblatt HEXFET®, StrongIRFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 6V, 10V 2.4mOhm @ 50A, 10V 3.9V @ 100µA 138 nC @ 10 V ±20V 4574 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    FCPF36N60NT

    FCPF36N60NT

    MOSFET N-CH 600V 36A TO220F

    Fairchild Semiconductor

    		 4,064 -
    RFQ
    		FCPF36N60NT Datenblatt SupreMOS™ TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 112 nC @ 10 V ±30V 4785 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    FDD3706

    FDD3706

    POWER FIELD-EFFECT TRANSISTOR, 1

    Fairchild Semiconductor

    		 2,045 -
    RFQ
    		FDD3706 Datenblatt PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 14.7A (Ta), 50A (Tc) 2.5V, 10V 9mOhm @ 16.2A, 10V 1.5V @ 250µA 23 nC @ 4.5 V ±12V 1882 pF @ 10 V - 3.8W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    FDD8874

    FDD8874

    POWER FIELD-EFFECT TRANSISTOR, 3

    Fairchild Semiconductor

    		 4,034 -
    RFQ
    		FDD8874 Datenblatt PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    NX3008NBKMB315

    NX3008NBKMB315

    NOW NEXPERIA NX3008NBKMB SMALL S

    NXP USA Inc.

    		 4,035 -
    RFQ
    		NX3008NBKMB315 Datenblatt - SC-101, SOT-883 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 530mA (Ta) 1.8V, 4.5V 1.4Ohm @ 350mA, 4.5V 1.1V @ 250µA 0.68 nC @ 4.5 V ±8V 50 pF @ 15 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
    FQP3P20

    FQP3P20

    POWER FIELD-EFFECT TRANSISTOR, 2

    Fairchild Semiconductor

    		 6,074 -
    RFQ
    		FQP3P20 Datenblatt QFET® TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 2.7Ohm @ 1.4A, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IRF6722MTRPBF

    IRF6722MTRPBF

    MOSFET N-CH 30V 13A/56A DIRECTFT

    International Rectifier

    		 8,265 -
    RFQ
    		IRF6722MTRPBF Datenblatt HEXFET® DirectFET™ Isometric MP Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 56A (Tc) 4.5V, 10V 7.7mOhm @ 13A, 10V 2.4V @ 50µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MP
    FDMC8327L

    FDMC8327L

    POWER FIELD-EFFECT TRANSISTOR, 1

    Fairchild Semiconductor

    		 5,102 -
    RFQ
    		FDMC8327L Datenblatt PowerTrench® 8-PowerWDFN Bulk Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta), 14A (Tc) 4.5V, 10V 9.7mOhm @ 12A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1850 pF @ 20 V - 2.3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
    PMPB13XNE,115

    PMPB13XNE,115

    MOSFET N-CH 30V 8A DFN2020MD-6

    NXP USA Inc.

    		 6,716 -
    RFQ
    		PMPB13XNE,115 Datenblatt - 6-XFDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 1.8V, 4.5V 16mOhm @ 8A, 4.5V 900mV @ 250µA 36 nC @ 4.5 V ±12V 2195 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
    FQP9N90C

    FQP9N90C

    POWER FIELD-EFFECT TRANSISTOR, 8

    Fairchild Semiconductor

    		 8,277 -
    RFQ
    		FQP9N90C Datenblatt QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.4Ohm @ 4A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 2730 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    PMPB33XN,115

    PMPB33XN,115

    MOSFET N-CH 30V 4.3A DFN2020MD-6

    NXP USA Inc.

    		 3,235 -
    RFQ
    		PMPB33XN,115 Datenblatt - 6-XFDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 2.5V, 4.5V 47mOhm @ 4.3A, 4.5V 1.2V @ 250µA 7.6 nC @ 4.5 V ±12V 505 pF @ 15 V - 1.5W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
    SI3443DV

    SI3443DV

    MOSFET P-CH 20V 4.4A MICRO6

    Fairchild Semiconductor

    		 5,347 -
    RFQ
    		SI3443DV Datenblatt HEXFET® SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 65mOhm @ 4.4A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±12V 1079 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro6™(TSOP-6)
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