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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXFT58N20Q TRL

    IXFT58N20Q TRL

    MOSFET N-CH 200V 58A TO268

    IXYS

    		 7,162 -
    RFQ
    		IXFT58N20Q TRL

    Datenblatt

         		HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200 V 58A (Tc) 10V 40mOhm @ 29A, 10V 4V @ 4mA 140 nC @ 10 V ±20V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-268HV (IXFT)
    IPC50R045CPX1SA1

    IPC50R045CPX1SA1

    MOSFET N-CH BARE DIE

    Infineon Technologies

    		 7,622 -
    RFQ

    -

    		 - - Bulk Active - - - - - - - - - - - - - - - - -
    IPC90R1K0C3X1SA1

    IPC90R1K0C3X1SA1

    MOSFET N-CH BARE DIE

    Infineon Technologies

    		 6,624 -
    RFQ

    -

    		 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
    IPC90R1K2C3X1SA1

    IPC90R1K2C3X1SA1

    MOSFET N-CH BARE DIE

    Infineon Technologies

    		 8,256 -
    RFQ

    -

    		 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
    IPC90R500C3X1SA1

    IPC90R500C3X1SA1

    MOSFET N-CH BARE DIE

    Infineon Technologies

    		 3,406 -
    RFQ

    -

    		 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
    IPC90R800C3X1SA1

    IPC90R800C3X1SA1

    MOSFET N-CH BARE DIE

    Infineon Technologies

    		 6,262 -
    RFQ

    -

    		 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
    SISC097N24DX1SA1

    SISC097N24DX1SA1

    TRANSISTOR P-CH BARE DIE

    Infineon Technologies

    		 3,095 -
    RFQ

    -

    		 - - Bulk Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
    IPC302N08N3X2SA1

    IPC302N08N3X2SA1

    MOSFET N-CH 80V SAWN WAFER

    Infineon Technologies

    		 2,690 -
    RFQ

    -

    		 - - Tape & Reel (TR) Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
    IPD65R1K5CEAUMA1

    IPD65R1K5CEAUMA1

    MOSFET N-CH 700V 5.2A TO252-3

    Infineon Technologies

    		 2,163 -
    RFQ
    		IPD65R1K5CEAUMA1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 700 V 5.2A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 53W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    IPN70R1K0CEATMA1

    IPN70R1K0CEATMA1

    MOSFET N-CH 700V 7.4A SOT223

    Infineon Technologies

    		 8,748 -
    RFQ
    		IPN70R1K0CEATMA1

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 700 V 7.4A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 150µA 14.9 nC @ 10 V ±20V 328 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-SOT223
    IPS65R650CEAKMA1

    IPS65R650CEAKMA1

    MOSFET N-CH 700V 10.1A TO251-3

    Infineon Technologies

    		 3,250 -
    RFQ
    		IPS65R650CEAKMA1

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 700 V 10.1A (Tc) 10V 650mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 86W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPSA70R1K4CEAKMA1

    IPSA70R1K4CEAKMA1

    MOSFET N-CH 700V 5.4A TO251-3

    Infineon Technologies

    		 4,007 -
    RFQ
    		IPSA70R1K4CEAKMA1

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 700 V 5.4A (Tc) 10V 1.4Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 53W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPSA70R2K0CEAKMA1

    IPSA70R2K0CEAKMA1

    MOSFET N-CH 700V 4A TO251-3

    Infineon Technologies

    		 8,285 -
    RFQ
    		IPSA70R2K0CEAKMA1

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 2Ohm @ 1A, 10V 3.5V @ 70µA 7.8 nC @ 10 V ±20V 163 pF @ 100 V - 42W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    SQP90142E_GE3

    SQP90142E_GE3

    MOSFET N-CH 200V 78.5A TO220AB

    Vishay Siliconix

    		 3,407 -
    RFQ
    		SQP90142E_GE3

    Datenblatt

         		TrenchFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 78.5A (Tc) 10V 15.3mOhm @ 20A, 10V 3.5V @ 250µA 85 nC @ 10 V ±20V 4200 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
    DMG10N60SCT

    DMG10N60SCT

    MOSFET N-CH 600V 12A TO220AB

    Diodes Incorporated

    		 6,178 -
    RFQ

    -

    		 - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1587 pF @ 16 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (Type TH)
    DMG3N60SCT

    DMG3N60SCT

    MOSFET N-CH 600V 3.3A TO220AB

    Diodes Incorporated

    		 2,670 -
    RFQ

    -

    		 - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.3A (Tc) 10V 3.5Ohm @ 1.5A, 10V 4V @ 250µA 12.6 nC @ 10 V ±30V 354 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB (Type TH)
    DMG7N65SCT

    DMG7N65SCT

    MOSFET N-CH 650V 7.7A TO220AB

    Diodes Incorporated

    		 8,815 -
    RFQ

    -

    		 - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.7A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 25.2 nC @ 10 V ±30V 886 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB (Type TH)
    DMG7N65SJ3

    DMG7N65SJ3

    MOSFET N-CH 650V 5.5A TO251

    Diodes Incorporated

    		 2,066 -
    RFQ

    -

    		 - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 25 nC @ 10 V ±30V 886 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-251
    DMG8N65SCT

    DMG8N65SCT

    MOSFET N-CH 650V 8A TO220AB

    Diodes Incorporated

    		 5,886 -
    RFQ

    -

    		 - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 1.3Ohm @ 4A, 10V 4V @ 250µA 30 nC @ 10 V ±30V 1217 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB (Type TH)
    DMJ70H900HJ3

    DMJ70H900HJ3

    MOSFET N-CH 700V 7A TO251

    Diodes Incorporated

    		 5,232 -
    RFQ
    		DMJ70H900HJ3

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 700 V 7A (Tc) 10V 900mOhm @ 1.5A, 10V 4V @ 250µA 18.4 nC @ 10 V ±30V 603 pF @ 50 V - 68W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-251
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