FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
APT8075BN

APT8075BN

MOSFET N-CH 800V 13A TO247AD

Microsemi Corporation

3,045 -
RFQ
APT8075BN

Datenblatt

POWER MOS IV® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 750mOhm @ 6.5A, 10V 4V @ 1mA 130 nC @ 10 V ±30V 2950 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
APT58MJ50J

APT58MJ50J

MOSFET N-CH 500V 58A ISOTOP

Microsemi Corporation

8,525 -
RFQ
APT58MJ50J

Datenblatt

POWER MOS 8™ SOT-227-4, miniBLOC Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 58A (Tc) 10V 65mOhm @ 42A, 10V 5V @ 2.5mA 340 nC @ 10 V ±30V 13500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT10M07JVR

APT10M07JVR

MOSFET N-CH 100V 225A ISOTOP

Microsemi Corporation

7,492 -
RFQ
APT10M07JVR

Datenblatt

POWER MOS V® SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 225A (Tc) 10V - 4V @ 5mA 1050 nC @ 10 V ±30V 21600 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT10M11JVR

APT10M11JVR

MOSFET N-CH 100V 144A ISOTOP

Microsemi Corporation

9,886 -
RFQ
APT10M11JVR

Datenblatt

POWER MOS V® SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 144A (Tc) 10V - 4V @ 2.5mA 450 nC @ 10 V ±30V 10300 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT4012BVR

APT4012BVR

MOSFET N-CH 400V 37A TO247AD

Microsemi Corporation

8,956 -
RFQ
APT4012BVR

Datenblatt

POWER MOS V® TO-247-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 37A (Tc) 10V 120mOhm @ 18.5A, 10V 4V @ 1mA 290 nC @ 10 V ±30V 5400 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
APT4012BVRG

APT4012BVRG

MOSFET N-CH 400V 37A TO247AD

Microsemi Corporation

5,122 -
RFQ
APT4012BVRG

Datenblatt

POWER MOS V® TO-247-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 37A (Tc) 10V 120mOhm @ 18.5A, 10V 4V @ 1mA 290 nC @ 10 V ±30V 5400 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
APT12080JVR

APT12080JVR

MOSFET N-CH 1200V 15A ISOTOP

Microsemi Corporation

4,741 -
RFQ
APT12080JVR

Datenblatt

POWER MOS V® SOT-227-4, miniBLOC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 15A (Tc) 10V 800mOhm @ 7.5A, 10V 4V @ 2.5mA 485 nC @ 10 V ±30V 7800 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
SI4010DY-T1-GE3

SI4010DY-T1-GE3

MOSFET N-CHANNEL 30V 31.3A 8SO

Vishay Siliconix

6,340 -
RFQ
SI4010DY-T1-GE3

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 31.3A (Tc) 4.5V, 10V 3.4mOhm @ 15A, 10V 2.3V @ 250µA 77 nC @ 10 V +20V, -16V 3595 pF @ 15 V - 6W (Tc) -55°C ~ 150°C (TA) - - Surface Mount 8-SOIC
SI4776DY-T1-GE3

SI4776DY-T1-GE3

MOSFET N-CHANNEL 30V 11.9A 8SO

Vishay Siliconix

7,476 -
RFQ
SI4776DY-T1-GE3

Datenblatt

SkyFET®, TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.9A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 2.3V @ 1mA 17.5 nC @ 10 V ±20V 521 pF @ 15 V - 4.1W (Tc) -55°C ~ 150°C (TA) - - Surface Mount 8-SOIC
AOT10N60L

AOT10N60L

MOSFET N-CHANNEL 600V 10A TO220

Alpha & Omega Semiconductor Inc.

8,363 -
RFQ
AOT10N60L

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4.5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
AOD4T60

AOD4T60

MOSFET N-CHANNEL 600V 4A TO252

Alpha & Omega Semiconductor Inc.

9,388 -
RFQ
AOD4T60

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.1Ohm @ 1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 460 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
AOT10T60P

AOT10T60P

MOSFET N-CHANNEL 600V 10A TO220

Alpha & Omega Semiconductor Inc.

3,851 -
RFQ
AOT10T60P

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 700mOhm @ 5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1595 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
AOT11C60

AOT11C60

MOSFET N-CHANNEL 600V 11A TO220

Alpha & Omega Semiconductor Inc.

5,090 -
RFQ
AOT11C60

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 440mOhm @ 5.5A, 10V 5V @ 250µA 42 nC @ 10 V ±30V 2000 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
AOTF12T60

AOTF12T60

MOSFET N-CH 600V 12A TO220F

Alpha & Omega Semiconductor Inc.

3,898 -
RFQ
AOTF12T60

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 520mOhm @ 6A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1954 pF @ 100 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AOTF12T60L

AOTF12T60L

MOSFET N-CH 600V 12A TO220F

Alpha & Omega Semiconductor Inc.

2,221 -
RFQ
AOTF12T60L

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 520mOhm @ 6A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1954 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AOTF7T60

AOTF7T60

MOSFET N-CHANNEL 600V 7A TO220F

Alpha & Omega Semiconductor Inc.

5,411 -
RFQ
AOTF7T60

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.1Ohm @ 3.5A, 10V 5V @ 250µA 24 nC @ 10 V ±30V 962 pF @ 100 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AOTF7T60L

AOTF7T60L

MOSFET N-CHANNEL 600V 7A TO220F

Alpha & Omega Semiconductor Inc.

2,393 -
RFQ
AOTF7T60L

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.1Ohm @ 3.5A, 10V 5V @ 250µA 24 nC @ 10 V ±30V 962 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AOW10T60

AOW10T60

MOSFET N-CHANNEL 600V 10A TO262

Alpha & Omega Semiconductor Inc.

9,733 -
RFQ
AOW10T60

Datenblatt

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 700mOhm @ 5A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1346 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
AOW296

AOW296

MOSFET N-CHANNEL 100V 70A TO262

Alpha & Omega Semiconductor Inc.

7,486 -
RFQ
AOW296

Datenblatt

AlphaSGT™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 9.7mOhm @ 20A, 10V 3.4V @ 250µA 52 nC @ 10 V ±20V 2785 pF @ 50 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
RJK5015DPK-00#T0

RJK5015DPK-00#T0

MOSFET N-CHANNEL 500V 25A TO3P

Renesas Electronics Corporation

6,233 -
RFQ
RJK5015DPK-00#T0

Datenblatt

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 25A (Ta) 10V 240mOhm @ 12.5A, 10V - 66 nC @ 10 V ±30V 2600 pF @ 25 V - 150W (Ta) 150°C (TJ) - - Through Hole TO-3P
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