FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
SPP06N60C3XKSA1

SPP06N60C3XKSA1

LOW POWER_LEGACY

Infineon Technologies

4,318 -
RFQ
SPP06N60C3XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V 3.9V @ 260µA 31 nC @ 10 V ±20V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP07N60S5HKSA1

SPP07N60S5HKSA1

LOW POWER_LEGACY

Infineon Technologies

8,882 -
RFQ
SPP07N60S5HKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP07N60S5XKSA1

SPP07N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies

5,457 -
RFQ
SPP07N60S5XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP07N65C3XKSA1

SPP07N65C3XKSA1

LOW POWER_LEGACY

Infineon Technologies

6,641 -
RFQ
SPP07N65C3XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
SPP11N60S5XKSA1

SPP11N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies

6,833 -
RFQ
SPP11N60S5XKSA1

Datenblatt

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 5.5V @ 500µA 54 nC @ 10 V ±20V 1460 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
BSC020N03LSGATMA2

BSC020N03LSGATMA2

LV POWER MOS

Infineon Technologies

4,242 -
RFQ
BSC020N03LSGATMA2

Datenblatt

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPB50N12S3L15ATMA1

IPB50N12S3L15ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

6,711 -
RFQ
IPB50N12S3L15ATMA1

Datenblatt

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120 V 50A (Tc) 4.5V, 10V 15.7mOhm @ 50A, 10V 2.4V @ 60µA 57 nC @ 10 V ±20V 4180 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPB70N12S3L12ATMA1

IPB70N12S3L12ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

2,832 -
RFQ
IPB70N12S3L12ATMA1

Datenblatt

OptiMOS™ T TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V 2.4V @ 83µA 77 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
IPD70N12S3L12ATMA1

IPD70N12S3L12ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

8,025 -
RFQ
IPD70N12S3L12ATMA1

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 4.5V, 10V 11.5mOhm @ 70A, 10V 2.4V @ 83µA 77 nC @ 10 V ±20V 5550 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3-11
IPC302N15N3X7SA1

IPC302N15N3X7SA1

MV POWER MOS

Infineon Technologies

5,629 -
RFQ
IPC302N15N3X7SA1

Datenblatt

OptiMOS™ 3 Die Bulk Active N-Channel MOSFET (Metal Oxide) 150 V - 10V 100mOhm @ 2A, 10V 4V @ 270µA - - - - - - - - Surface Mount Die
IPT043N15N5ATMA1

IPT043N15N5ATMA1

MV POWER MOS

Infineon Technologies

2,070 -
RFQ
IPT043N15N5ATMA1

Datenblatt

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
BSP612PH6327XTSA1

BSP612PH6327XTSA1

SMALL SIGNAL+P-CH

Infineon Technologies

7,464 -
RFQ
BSP612PH6327XTSA1

Datenblatt

OptiMOS™ - Tape & Reel (TR) Obsolete - - - 3A (Ta) - - - - - - - - - Automotive AEC-Q101 - -
2SJ438(AISIN,A,Q)

2SJ438(AISIN,A,Q)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

5,112 -
RFQ
2SJ438(AISIN,A,Q)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SJ438(AISIN,Q,M)

2SJ438(AISIN,Q,M)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

9,169 -
RFQ
2SJ438(AISIN,Q,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SJ438(CANO,Q,M)

2SJ438(CANO,Q,M)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

4,507 -
RFQ
2SJ438(CANO,Q,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SJ438,MDKQ(J

2SJ438,MDKQ(J

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

9,030 -
RFQ
2SJ438,MDKQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SJ438,MDKQ(M

2SJ438,MDKQ(M

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

5,627 -
RFQ
2SJ438,MDKQ(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SJ438,Q(J

2SJ438,Q(J

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

7,048 -
RFQ
2SJ438,Q(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SJ438,Q(M

2SJ438,Q(M

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

8,358 -
RFQ
2SJ438,Q(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete - - - 5A (Tj) - - - - - - - - - - - Through Hole TO-220NIS
2SK2962(T6CANO,A,F

2SK2962(T6CANO,A,F

MOSFET N-CH TO92MOD

Toshiba Semiconductor and Storage

2,649 -
RFQ
2SK2962(T6CANO,A,F

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete - - - 1A (Tj) - - - - - - - - - - - Through Hole TO-92MOD
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