FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
DMN60H3D5SK3-13

DMN60H3D5SK3-13

MOSFET N-CH 600V 2.8A TO252

Diodes Incorporated

6,827 -
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.8A (Tc) 10V 3.5Ohm @ 1.5A, 10V 4V @ 250µA 12.6 nC @ 10 V ±30V 354 pF @ 25 V - 41W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
DMN60H4D5SK3-13

DMN60H4D5SK3-13

MOSFET N-CH 600V 2.5A TO252

Diodes Incorporated

4,619 -
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Tc) 10V 4.5Ohm @ 1A, 10V 4V @ 250µA 8.2 nC @ 10 V ±30V 273.5 pF @ 25 V - 41W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
DMN80H2D0SCTI

DMN80H2D0SCTI

MOSFET N-CH 800V 7A ITO220AB

Diodes Incorporated

8,617 -
RFQ

-

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 2Ohm @ 2.5A, 10V 4V @ 250µA 35.4 nC @ 10 V ±30V 1253 pF @ 25 V - 41W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB
DMP2042UCB4-7

DMP2042UCB4-7

MOSFET P-CH 20V 4.6A U-WLB1010-4

Diodes Incorporated

3,228 -
RFQ

-

- 4-UFBGA, WLBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 2.5V, 4.5V 45mOhm @ 1A, 4.5V 1.2V @ 250µA 2.5 nC @ 4.5 V -6V 218 pF @ 10 V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-WLB1010-4
DMP3017SFV-13

DMP3017SFV-13

MOSFET P-CH 30V 40A POWERDI3333

Diodes Incorporated

4,291 -
RFQ
DMP3017SFV-13

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 10mOhm @ 11.5A, 10V 3V @ 250µA 41 nC @ 10 V ±25V 2246 pF @ 15 V - 31W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8
DMP3017SFV-7

DMP3017SFV-7

MOSFET P-CH 30V 40A POWERDI3333

Diodes Incorporated

9,772 -
RFQ
DMP3017SFV-7

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 10mOhm @ 11.5A, 10V 3V @ 250µA 41 nC @ 10 V ±25V 2246 pF @ 15 V - 31W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8
FCP11N60N-F102

FCP11N60N-F102

MOSFET N-CH 600V 10.8A TO220F

onsemi

9,988 -
RFQ
FCP11N60N-F102

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.8A (Tc) 10V 299mOhm @ 5.4A, 10V 4V @ 250µA 35.6 nC @ 10 V ±30V 1505 pF @ 100 V - 94W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
FCP16N60N-F102

FCP16N60N-F102

MOSFET N-CH 600V 16A TO220F

onsemi

2,622 -
RFQ
FCP16N60N-F102

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 8A, 10V 4V @ 250µA 52.3 nC @ 10 V ±30V 2170 pF @ 100 V - 134.4W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
FDMA008P20LZ

FDMA008P20LZ

MOSFET P-CHANNEL 20V 12A 6PQFN

onsemi

5,147 -
RFQ
FDMA008P20LZ

Datenblatt

- 6-PowerWDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta) 1.5V, 4.5V 13mOhm @ 2.5A, 4.5V 1.4V @ 250µA 39 nC @ 4.5 V ±8V 4383 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN (2x2)
FDMC013P030Z

FDMC013P030Z

MOSFET P-CHANNEL 30V 54A 8MLP

onsemi

7,870 -
RFQ
FDMC013P030Z

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V 3V @ 250µA 135 nC @ 10 V ±25V 5785 pF @ 15 V - 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
FDP032N08-F102

FDP032N08-F102

MOSFET N-CHANNEL 75V 120A TO220

onsemi

5,911 -
RFQ
FDP032N08-F102

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
FDP038AN06A0-F102

FDP038AN06A0-F102

MOSFET N-CH 60V 80A TO220-3

onsemi

3,943 -
RFQ
FDP038AN06A0-F102

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
FQD5N50CTM-WS

FQD5N50CTM-WS

MOSFET N-CHANNEL 500V 4A TO252

onsemi

7,984 -
RFQ
FQD5N50CTM-WS

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 1.4Ohm @ 2A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM1NB60SCT A3G

TSM1NB60SCT A3G

MOSFET N-CH 600V 500MA TO92

Taiwan Semiconductor Corporation

2,091 -
RFQ
TSM1NB60SCT A3G

Datenblatt

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 500mA (Tc) 10V 10Ohm @ 250mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92
TSM1NB60SCT B0G

TSM1NB60SCT B0G

MOSFET N-CH 600V 500MA TO92

Taiwan Semiconductor Corporation

8,505 -
RFQ
TSM1NB60SCT B0G

Datenblatt

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 500mA (Tc) 10V 10Ohm @ 250mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92
TSM3N100CP ROG

TSM3N100CP ROG

MOSFET N-CH 1000V 2.5A TO252

Taiwan Semiconductor Corporation

2,252 -
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 1000 V 2.5A (Tc) 10V 6Ohm @ 1.25A, 10V 5.5V @ 250µA 19 nC @ 10 V ±30V 664 pF @ 25 V - 99W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FDS4465_SN00187

FDS4465_SN00187

MOSFET P-CHANNEL 20V 13.5A 8SO

onsemi

7,745 -
RFQ

-

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 13.5A 1.8V, 4.5V 8.5mOhm @ 13.5A, 4.5V 1.5V @ 250µA 120 nC @ 4.5 V ±8V 8237 pF @ 10 V - 1.2W -55°C ~ 175°C (TJ) - - Surface Mount 8-SO
FDS6298_G

FDS6298_G

MOSFET N-CHANNEL 30V 13A 8SO

onsemi

5,968 -
RFQ

-

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Tj) 4.5V, 10V 9mOhm @ 13A, 10V 3V @ 250µA 14 nC @ 5 V ±20V 1108 pF @ 15 V - 1.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDC655BN_NBNN007

FDC655BN_NBNN007

MOSFET N-CH 30V 6.3A SUPERSOT6

onsemi

4,606 -
RFQ

-

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 25mOhm @ 6.3A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 620 pF @ 15 V - 800mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
FCA47N60F_SN00171

FCA47N60F_SN00171

MOSFET N-CH 600V 47A TO3PN

onsemi

3,125 -
RFQ

-

SuperFET™ TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 73mOhm @ 23.5A, 10V 5V @ 250µA 270 nC @ 10 V ±30V 8000 pF @ 25 V - 417W -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
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