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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SSM4K27CTTPL3

    SSM4K27CTTPL3

    MOSFET N-CH 20V 500MA CST4

    Toshiba Semiconductor and Storage

    		 7,954 -
    RFQ
    		SSM4K27CTTPL3

    Datenblatt

         		U-MOSIII 4-SMD, No Lead Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.8V, 4V 205mOhm @ 250mA, 4V 1.1V @ 1mA - ±12V 174 pF @ 10 V - 400mW (Ta) 150°C (TJ) - - Surface Mount CST4 (1.2x0.8)
    SSM6J53FE(TE85L,F)

    SSM6J53FE(TE85L,F)

    MOSFET P-CH 20V 1.8A ES6

    Toshiba Semiconductor and Storage

    		 8,871 -
    RFQ
    		SSM6J53FE(TE85L,F)

    Datenblatt

         		- SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.5V, 2.5V 136mOhm @ 1A, 2.5V 1V @ 1mA 10.6 nC @ 4 V ±8V 568 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount ES6
    NTVS3141PT2G

    NTVS3141PT2G

    MOSFET P-CH 20V CSP-6

    onsemi

    		 2,493 -
    RFQ

    -

    		 - 6-UFBGA, FCBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.9A (Ta) - - - - - - - - - - - Surface Mount 6-FlipChip (1x1.5)
    IPD60R380C6

    IPD60R380C6

    MOSFET N-CH 600V 10.6A TO252-3

    Infineon Technologies

    		 7,856 -
    RFQ
    		IPD60R380C6

    Datenblatt

         		CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    IPD60R600C6BTMA1

    IPD60R600C6BTMA1

    MOSFET N-CH 600V 7.3A TO252-3

    Infineon Technologies

    		 5,798 -
    RFQ
    		IPD60R600C6BTMA1

    Datenblatt

         		CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    IPD60R950C6

    IPD60R950C6

    MOSFET N-CH 600V 4.4A TO252-3

    Infineon Technologies

    		 3,423 -
    RFQ
    		IPD60R950C6

    Datenblatt

         		CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    IPP530N15N3GXKSA1

    IPP530N15N3GXKSA1

    MOSFET N-CH 150V 21A TO220-3

    Infineon Technologies

    		 5,722 -
    RFQ
    		IPP530N15N3GXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IPP60R380C6XKSA1

    IPP60R380C6XKSA1

    MOSFET N-CH 600V 10.6A TO220-3

    Infineon Technologies

    		 8,344 -
    RFQ
    		IPP60R380C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPP60R600C6XKSA1

    IPP60R600C6XKSA1

    MOSFET N-CH 600V 7.3A TO220-3

    Infineon Technologies

    		 6,551 -
    RFQ
    		IPP60R600C6XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    NDD04N60Z-1G

    NDD04N60Z-1G

    MOSFET N-CH 600V 4.1A IPAK

    onsemi

    		 5,725 -
    RFQ
    		NDD04N60Z-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.1A (Tc) 10V 2Ohm @ 2A, 10V 4.5V @ 50µA 29 nC @ 10 V ±30V 640 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    NTB6411ANG

    NTB6411ANG

    MOSFET N-CH 100V 77A D2PAK

    onsemi

    		 6,974 -
    RFQ
    		NTB6411ANG

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 77A (Tc) 10V 14mOhm @ 72A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3700 pF @ 25 V - 217W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    NTB6413ANG

    NTB6413ANG

    MOSFET N-CH 100V 42A D2PAK

    onsemi

    		 7,692 -
    RFQ
    		NTB6413ANG

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 28mOhm @ 42A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    NTD4913NT4G

    NTD4913NT4G

    MOSFET N-CH 30V 7.7A/32A DPAK

    onsemi

    		 7,541 -
    RFQ
    		NTD4913NT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.7A (Ta), 32A (Tc) 4.5V, 10V 10.5mOhm @ 30A, 10V 2.2V @ 250µA 13 nC @ 10 V ±20V 1013 pF @ 15 V - 1.36W (Ta), 24W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    NTD6415ANT4G

    NTD6415ANT4G

    MOSFET N-CH 100V 23A DPAK

    onsemi

    		 4,629 -
    RFQ
    		NTD6415ANT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 55mOhm @ 23A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    NTD6416AN-1G

    NTD6416AN-1G

    MOSFET N-CH 100V 17A IPAK

    onsemi

    		 6,520 -
    RFQ
    		NTD6416AN-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 81mOhm @ 17A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 620 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    NTD6416ANL-1G

    NTD6416ANL-1G

    MOSFET N-CH 100V 19A IPAK

    onsemi

    		 8,717 -
    RFQ
    		NTD6416ANL-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 4.5V, 10V 74mOhm @ 19A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    NTMFS4921NT3G

    NTMFS4921NT3G

    MOSFET N-CH 30V 8.8A/58.5A 5DFN

    onsemi

    		 6,023 -
    RFQ
    		NTMFS4921NT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 58.5A (Tc) 4.5V, 11.5V 6.95mOhm @ 30A, 10V 2.5V @ 250µA 25 nC @ 11.5 V ±20V 1400 pF @ 12 V - 870mW (Ta), 38.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTP6411ANG

    NTP6411ANG

    MOSFET N-CH 100V 77A TO220AB

    onsemi

    		 9,966 -
    RFQ
    		NTP6411ANG

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 77A (Tc) 10V 14mOhm @ 72A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3700 pF @ 25 V - 217W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    NTP6413ANG

    NTP6413ANG

    MOSFET N-CH 100V 42A TO220AB

    onsemi

    		 5,762 -
    RFQ
    		NTP6413ANG

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 28mOhm @ 42A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1800 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    NTTFS4937NTAG

    NTTFS4937NTAG

    MOSFET N-CH 30V 11A/75A 8WDFN

    onsemi

    		 4,911 -
    RFQ
    		NTTFS4937NTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 75A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.2V @ 250µA 35.5 nC @ 10 V ±20V 2540 pF @ 15 V - 860mW (Ta), 43.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
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