FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
NTD4959N-35G

NTD4959N-35G

MOSFET N-CH 30V 9A/58A IPAK

onsemi

7,262 -
RFQ
NTD4959N-35G

Datenblatt

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 25 nC @ 11.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4959NH-35G

NTD4959NH-35G

MOSFET N-CH 30V 9A/58A IPAK

onsemi

4,731 -
RFQ
NTD4959NH-35G

Datenblatt

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 44 nC @ 11.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4963N-35G

NTD4963N-35G

MOSFET N-CH 30V 8.1A/44A IPAK

onsemi

7,870 -
RFQ
NTD4963N-35G

Datenblatt

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.1A (Ta), 44A (Tc) 4.5V, 10V 9.6mOhm @ 30A, 10V 2.5V @ 250µA 16.2 nC @ 10 V ±20V 1035 pF @ 12 V - 1.1W (Ta), 35.7W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4963NT4G

NTD4963NT4G

MOSFET N-CH 30V 8.1A/44A DPAK

onsemi

7,155 -
RFQ
NTD4963NT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.1A (Ta), 44A (Tc) 4.5V, 10V 9.6mOhm @ 30A, 10V 2.5V @ 250µA 16.2 nC @ 10 V ±20V 1035 pF @ 12 V - 1.1W (Ta), 35.7W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTMFS4897NFT3G

NTMFS4897NFT3G

MOSFET N-CH 30V 17A/171A 5DFN

onsemi

2,167 -
RFQ
NTMFS4897NFT3G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 171A (Tc) 4.5V, 10V 2mOhm @ 22A, 10V 2.5V @ 1mA 83.6 nC @ 10 V ±20V 5660 pF @ 15 V - 950mW (Ta), 96.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
SSM3K106TU(TE85L)

SSM3K106TU(TE85L)

MOSFET N-CH 20V 1.2A UFM

Toshiba Semiconductor and Storage

3,371 -
RFQ
SSM3K106TU(TE85L)

Datenblatt

π-MOSVI 3-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 4V, 10V 310mOhm @ 600mA, 10V 2.3V @ 100µA - ±20V 36 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount UFM
TK13A65U(STA4,Q,M)

TK13A65U(STA4,Q,M)

MOSFET N-CH 650V 13A TO220SIS

Toshiba Semiconductor and Storage

8,355 -
RFQ
TK13A65U(STA4,Q,M)

Datenblatt

DTMOSII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13A (Ta) 10V 380mOhm @ 6.5A, 10V 5V @ 1mA 17 nC @ 10 V ±30V 950 pF @ 10 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TK4A60D(STA4,Q,M)

TK4A60D(STA4,Q,M)

MOSFET N-CH 600V 4A TO220SIS

Toshiba Semiconductor and Storage

5,662 -
RFQ
TK4A60D(STA4,Q,M)

Datenblatt

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
TPCC8003-H(TE12LQM

TPCC8003-H(TE12LQM

MOSFET N-CH 30V 13A 8TSON

Toshiba Semiconductor and Storage

9,245 -
RFQ
TPCC8003-H(TE12LQM

Datenblatt

U-MOSVI-H 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 16.9mOhm @ 6.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1300 pF @ 10 V - 700mW (Ta), 22W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
TPCC8008(TE12L,QM)

TPCC8008(TE12L,QM)

MOSFET N-CH 30V 25A 8TSON

Toshiba Semiconductor and Storage

3,239 -
RFQ
TPCC8008(TE12L,QM)

Datenblatt

U-MOSIV 8-VDFN Exposed Pad Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) 4.5V, 10V 6.8mOhm @ 12.5A, 10V 2.5V @ 1A 30 nC @ 10 V ±25V 1600 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.3x3.3)
HAT1072H-EL-E

HAT1072H-EL-E

MOSFET P-CH 30V 40A LFPAK

Renesas Electronics Corporation

2,462 -
RFQ
HAT1072H-EL-E

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 4.5mOhm @ 20A, 10V - 155 nC @ 10 V +10V, -20V 9500 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Surface Mount LFPAK
HAT2170H-EL-E

HAT2170H-EL-E

MOSFET N-CH 40V 45A LFPAK

Renesas Electronics Corporation

8,591 -
RFQ
HAT2170H-EL-E

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 45A (Ta) 7V, 10V 4.2mOhm @ 22.5A, 10V 3V @ 1mA 62 nC @ 10 V ±20V 4650 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Surface Mount LFPAK
HAT2172H-EL-E

HAT2172H-EL-E

MOSFET N-CH 40V 30A LFPAK

Renesas Electronics Corporation

9,570 -
RFQ
HAT2172H-EL-E

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta) 7V, 10V 7.5mOhm @ 15A, 10V 3V @ 1mA 32 nC @ 10 V ±20V 2420 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Surface Mount LFPAK
SSM3J108TU(TE85L)

SSM3J108TU(TE85L)

MOSFET P-CH 20V 1.8A UFM

Toshiba Semiconductor and Storage

4,079 -
RFQ
SSM3J108TU(TE85L)

Datenblatt

U-MOSIII 3-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.8A (Ta) 1.8V, 4V 158mOhm @ 800mA, 4V 1V @ 1mA - ±8V 250 pF @ 10 V - 500mW (Ta) 150°C (TJ) - - Surface Mount UFM
TK40P03M1(T6RSS-Q)

TK40P03M1(T6RSS-Q)

MOSFET N-CH 30V 40A DP

Toshiba Semiconductor and Storage

5,686 -
RFQ
TK40P03M1(T6RSS-Q)

Datenblatt

U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 10.8mOhm @ 20A, 10V 2.3V @ 100µA 17.5 nC @ 10 V ±20V 1150 pF @ 10 V - - - - - Surface Mount DPAK
TK40P04M1(T6RSS-Q)

TK40P04M1(T6RSS-Q)

MOSFET N-CH 40V 40A DP

Toshiba Semiconductor and Storage

6,191 -
RFQ
TK40P04M1(T6RSS-Q)

Datenblatt

U-MOSVI-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 4.5V, 10V 11mOhm @ 20A, 10V 2.3V @ 200µA 29 nC @ 10 V ±20V 1920 pF @ 10 V - 47W (Tc) 150°C (TJ) - - Surface Mount DPAK
TK4A60DA(STA4,Q,M)

TK4A60DA(STA4,Q,M)

MOSFET N-CH 600V 3.5A TO220SIS

Toshiba Semiconductor and Storage

3,900 -
RFQ

-

π-MOSVII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Ta) 10V 2.2Ohm @ 1.8A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - - 150°C (TJ) - - Through Hole TO-220SIS
RSS100N03FU6TB

RSS100N03FU6TB

MOSFET N-CH 30V 10A 8SOP

Rohm Semiconductor

6,927 -
RFQ
RSS100N03FU6TB

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4V, 10V 13mOhm @ 10A, 10V 2.5V @ 1mA 14 nC @ 5 V 20V 1070 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
RSS110N03FU6TB

RSS110N03FU6TB

MOSFET N-CH 30V 11A 8SOP

Rohm Semiconductor

4,937 -
RFQ
RSS110N03FU6TB

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4V, 10V 10.7mOhm @ 11A, 10V 2.5V @ 1mA 17 nC @ 5 V 20V 1300 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
RSS125N03FU6TB

RSS125N03FU6TB

MOSFET N-CH 30V 12.5A 8SOP

Rohm Semiconductor

9,903 -
RFQ
RSS125N03FU6TB

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4V, 10V 8.9mOhm @ 12.5A, 10V 2.5V @ 1mA 28 nC @ 5 V 20V 1670 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
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