FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IRF1404ZGPBF

IRF1404ZGPBF

MOSFET N-CH 40V 180A TO220AB

Infineon Technologies

6,509 -
RFQ
IRF1404ZGPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF7665S2TR1PBF

IRF7665S2TR1PBF

MOSFET N-CH 100V 4.1A DIRECTFET

Infineon Technologies

9,247 -
RFQ
IRF7665S2TR1PBF

Datenblatt

- DirectFET™ Isometric SB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 4.1A (Ta), 14.4A (Tc) 10V 62mOhm @ 8.9A, 10V 5V @ 25µA 13 nC @ 10 V ±20V 515 pF @ 25 V - 2.4W (Ta), 30W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DIRECTFET SB
IRF8714GTRPBF

IRF8714GTRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

8,706 -
RFQ
IRF8714GTRPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1020 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF8721GTRPBF

IRF8721GTRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

5,788 -
RFQ
IRF8721GTRPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1040 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFB3004GPBF

IRFB3004GPBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies

8,824 -
RFQ
IRFB3004GPBF

Datenblatt

HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK7226-75A/C1,118

BUK7226-75A/C1,118

MOSFET N-CH 75V 45A DPAK

NXP USA Inc.

8,758 -
RFQ
BUK7226-75A/C1,118

Datenblatt

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 45A (Tc) 10V 26mOhm @ 25A, 10V 4V @ 1mA 48 nC @ 10 V ±20V 2385 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
BUK7509-55A,127

BUK7509-55A,127

MOSFET N-CH 55V 75A TO220AB

Nexperia USA Inc.

7,316 -
RFQ
BUK7509-55A,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 0 V ±20V 3271 pF @ 25 V - 211W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
BUK7510-55AL,127

BUK7510-55AL,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.

8,307 -
RFQ
BUK7510-55AL,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 124 nC @ 10 V ±20V 6280 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
BUK764R0-75C,118

BUK764R0-75C,118

MOSFET N-CH 75V 100A D2PAK

Nexperia USA Inc.

9,588 -
RFQ
BUK764R0-75C,118

Datenblatt

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 142 nC @ 10 V ±20V 11659 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
BUK7E04-40A,127

BUK7E04-40A,127

MOSFET N-CH 40V 75A I2PAK

Nexperia USA Inc.

5,020 -
RFQ
BUK7E04-40A,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4.5mOhm @ 25A, 10V 4V @ 1mA 117 nC @ 10 V ±20V 5730 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
BUK7E2R3-40C,127

BUK7E2R3-40C,127

MOSFET N-CH 40V 100A I2PAK

Nexperia USA Inc.

2,336 -
RFQ
BUK7E2R3-40C,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.3mOhm @ 25A, 10V 4V @ 1mA 175 nC @ 10 V ±20V 11323 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
BUK9213-30A,118

BUK9213-30A,118

MOSFET N-CH 30V 55A DPAK

NXP USA Inc.

2,621 -
RFQ
BUK9213-30A,118

Datenblatt

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 11mOhm @ 25A, 10V 2V @ 1mA 37 nC @ 5 V ±15V 2852 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
BUK9E04-40A,127

BUK9E04-40A,127

MOSFET N-CH 40V 75A I2PAK

Nexperia USA Inc.

4,095 -
RFQ
BUK9E04-40A,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.3V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 128 nC @ 5 V ±15V 8260 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
BUK9E06-55A,127

BUK9E06-55A,127

MOSFET N-CH 55V 75A I2PAK

Nexperia USA Inc.

2,614 -
RFQ
BUK9E06-55A,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2V @ 1mA - ±15V 8600 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
BUK9E08-55B,127

BUK9E08-55B,127

MOSFET N-CH 55V 75A I2PAK

Nexperia USA Inc.

6,787 -
RFQ
BUK9E08-55B,127

Datenblatt

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 5V, 10V 7mOhm @ 25A, 10V 2V @ 1mA 45 nC @ 5 V ±15V 5280 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole I2PAK
PHP165NQ08T,127

PHP165NQ08T,127

MOSFET N-CH 75V 75A TO220AB

NXP USA Inc.

8,094 -
RFQ
PHP165NQ08T,127

Datenblatt

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 5mOhm @ 25A, 10V 4V @ 1mA 165 nC @ 10 V ±20V 8250 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
PMK50XP,518

PMK50XP,518

MOSFET P-CH 20V 7.9A 8SO

Nexperia USA Inc.

2,108 -
RFQ
PMK50XP,518

Datenblatt

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.9A (Tc) 4.5V 50mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±12V 1020 pF @ 20 V - 5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
STF8NM60ND

STF8NM60ND

MOSFET N-CH 600V 7A TO220FP

STMicroelectronics

8,258 -
RFQ
STF8NM60ND

Datenblatt

FDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 700mOhm @ 3.5A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 560 pF @ 50 V - 25W (Tc) 150°C (TJ) - - Through Hole TO-220FP
IRF8707GPBF

IRF8707GPBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies

8,966 -
RFQ
IRF8707GPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 11.9mOhm @ 11A, 10V 2.35V @ 25µA 9.3 nC @ 4.5 V ±20V 760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF8714GPBF

IRF8714GPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

2,058 -
RFQ
IRF8714GPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1020 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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