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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TPCF8102(TE85L,F,M

    TPCF8102(TE85L,F,M

    MOSFET P-CH 20V 6A VS-8

    Toshiba Semiconductor and Storage

    		 4,828 -
    RFQ
    		TPCF8102(TE85L,F,M

    Datenblatt

         		U-MOSIII 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 1.8V, 4.5V 30mOhm @ 3A, 4.5V 1.2V @ 200µA 19 nC @ 5 V ±8V 1550 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-8 (2.9x1.5)
    TPCP8001-H(TE85LFM

    TPCP8001-H(TE85LFM

    MOSFET N-CH 30V 7.2A PS-8

    Toshiba Semiconductor and Storage

    		 5,962 -
    RFQ
    		TPCP8001-H(TE85LFM

    Datenblatt

         		U-MOSIII 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 16mOhm @ 3.6A, 10V 2.3V @ 1mA 11 nC @ 10 V ±20V 640 pF @ 10 V - 1W (Ta), 30W (Tc) 150°C (TJ) - - Surface Mount PS-8 (2.9x2.4)
    PSMN9R0-30YL,115

    PSMN9R0-30YL,115

    MOSFET N-CH 30V 61A LFPAK56

    NXP USA Inc.

    		 5,325 -
    RFQ

    -

    		 - SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 8mOhm @ 15A, 10V 2.15V @ 1mA 17.8 nC @ 10 V ±20V 1006 pF @ 12 V - 46W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    IXFV12N120P

    IXFV12N120P

    MOSFET N-CH 1200V 12A PLUS220

    IXYS

    		 6,739 -
    RFQ
    		IXFV12N120P

    Datenblatt

         		HiPerFET™, PolarP2™ TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.35Ohm @ 500mA, 10V 6.5V @ 1mA 103 nC @ 10 V ±30V 5400 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS220
    IXFV12N120PS

    IXFV12N120PS

    MOSFET N-CH 1200V 12A PLUS220SMD

    IXYS

    		 7,720 -
    RFQ
    		IXFV12N120PS

    Datenblatt

         		HiPerFET™, PolarP2™ PLUS-220SMD Tube Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.35Ohm @ 500mA, 10V 6.5V @ 1mA 103 nC @ 10 V ±30V 5400 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PLUS-220SMD
    IXFV15N100P

    IXFV15N100P

    MOSFET N-CH 1000V 15A PLUS220

    IXYS

    		 8,383 -
    RFQ
    		IXFV15N100P

    Datenblatt

         		HiPerFET™, PolarP2™ TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 760mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5140 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS220
    IXFV15N100PS

    IXFV15N100PS

    MOSFET N-CH 1000V 15A PLUS220SMD

    IXYS

    		 8,755 -
    RFQ
    		IXFV15N100PS

    Datenblatt

         		HiPerFET™, PolarP2™ PLUS-220SMD Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 760mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5140 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PLUS-220SMD
    IXKH20N60C5

    IXKH20N60C5

    MOSFET N-CH 600V 20A TO247AD

    IXYS

    		 8,628 -
    RFQ
    		IXKH20N60C5

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 200mOhm @ 10A, 10V 3.5V @ 1.1mA 45 nC @ 10 V ±20V 1520 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
    IXKP13N60C5

    IXKP13N60C5

    MOSFET N-CH 600V 13A TO220AB

    IXYS

    		 6,873 -
    RFQ
    		IXKP13N60C5

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 300mOhm @ 6.6A, 10V 3.5V @ 440µA 30 nC @ 10 V ±20V 1100 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IXKP20N60C5M

    IXKP20N60C5M

    MOSFET N-CH 600V 7.6A TO220ABFP

    IXYS

    		 6,484 -
    RFQ
    		IXKP20N60C5M

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7.6A (Tc) 10V 200mOhm @ 10A, 10V 3.5V @ 1.1mA 30 nC @ 10 V ±20V 1520 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-220ABFP
    IXTV110N25TS

    IXTV110N25TS

    MOSFET N-CH 250V 110A PLUS220SMD

    IXYS

    		 9,800 -
    RFQ
    		IXTV110N25TS

    Datenblatt

         		- PLUS-220SMD Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 110A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 1mA 157 nC @ 10 V ±20V 9400 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PLUS-220SMD
    IXTP32N20T

    IXTP32N20T

    MOSFET N-CH 200V 32A TO220AB

    IXYS

    		 3,549 -
    RFQ
    		IXTP32N20T

    Datenblatt

         		Trench TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 72mOhm @ 16A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1760 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    SI7107DN-T1-GE3

    SI7107DN-T1-GE3

    MOSFET P-CH 20V 9.8A PPAK1212-8

    Vishay Siliconix

    		 2,345 -
    RFQ
    		SI7107DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.8A (Ta) 1.8V, 4.5V 10.8mOhm @ 15.3A, 4.5V 1V @ 450µA 44 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    SI7485DP-T1-GE3

    SI7485DP-T1-GE3

    MOSFET P-CH 20V 12.5A PPAK SO-8

    Vishay Siliconix

    		 7,077 -
    RFQ

    -

    		 - PowerPAK® SO-8 Cut Tape (CT) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12.5A (Ta) - 7.3mOhm @ 20A, 4.5V 900mV @ 1mA 150 nC @ 5 V - - - - - - - Surface Mount PowerPAK® SO-8
    IPB034N03LGATMA1

    IPB034N03LGATMA1

    MOSFET N-CH 30V 80A D2PAK

    Infineon Technologies

    		 2,353 -
    RFQ
    		IPB034N03LGATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IPB042N03LGATMA1

    IPB042N03LGATMA1

    MOSFET N-CH 30V 70A D2PAK

    Infineon Technologies

    		 4,533 -
    RFQ
    		IPB042N03LGATMA1

    Datenblatt

         		OptiMOS™ 3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IPB055N03LGATMA1

    IPB055N03LGATMA1

    MOSFET N-CH 30V 50A D2PAK

    Infineon Technologies

    		 5,606 -
    RFQ
    		IPB055N03LGATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IPB096N03LGATMA1

    IPB096N03LGATMA1

    MOSFET N-CH 30V 35A D2PAK

    Infineon Technologies

    		 4,432 -
    RFQ
    		IPB096N03LGATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 9.6mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
    IPS090N03LGAKMA1

    IPS090N03LGAKMA1

    MOSFET N-CH 30V 40A TO251-3

    Infineon Technologies

    		 3,342 -
    RFQ
    		IPS090N03LGAKMA1

    Datenblatt

         		OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
    IPS135N03LGAKMA1

    IPS135N03LGAKMA1

    MOSFET N-CH 30V 30A TO251-3

    Infineon Technologies

    		 9,414 -
    RFQ
    		IPS135N03LGAKMA1

    Datenblatt

         		OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 13.5mOhm @ 30A, 10V 2.2V @ 250µA 10 nC @ 10 V ±20V 1000 pF @ 15 V - 31W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
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