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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SI7758DP-T1-GE3

    SI7758DP-T1-GE3

    MOSFET N-CH 30V 60A PPAK SO-8

    Vishay Siliconix

    		 5,531 -
    RFQ
    		SI7758DP-T1-GE3

    Datenblatt

         		SkyFET®, TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.9mOhm @ 20A, 10V 2.7V @ 250µA 160 nC @ 10 V ±20V 7150 pF @ 15 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SI7784DP-T1-GE3

    SI7784DP-T1-GE3

    MOSFET N-CH 30V 35A PPAK SO-8

    Vishay Siliconix

    		 7,590 -
    RFQ

    -

    		 TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1600 pF @ 15 V - 5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SI7802DN-T1-GE3

    SI7802DN-T1-GE3

    MOSFET N-CH 250V 1.24A PPAK

    Vishay Siliconix

    		 3,359 -
    RFQ
    		SI7802DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 1.24A (Ta) 6V, 10V 435mOhm @ 1.95A, 10V 3.6V @ 250µA 21 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    SI7882DP-T1-GE3

    SI7882DP-T1-GE3

    MOSFET N-CH 12V 13A PPAK SO-8

    Vishay Siliconix

    		 8,025 -
    RFQ
    		SI7882DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 13A (Ta) 2.5V, 4.5V 5.5mOhm @ 17A, 4.5V 1.4V @ 250µA 30 nC @ 4.5 V ±8V - - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIA415DJ-T1-GE3

    SIA415DJ-T1-GE3

    MOSFET P-CH 20V 12A PPAK SC70-6

    Vishay Siliconix

    		 4,050 -
    RFQ
    		SIA415DJ-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 2.5V, 4.5V 35mOhm @ 5.6A, 4.5V 1.5V @ 250µA 47 nC @ 10 V ±12V 1250 pF @ 10 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6
    SIA430DJ-T1-GE3

    SIA430DJ-T1-GE3

    MOSFET N-CH 20V 12A PPAK SC70-6

    Vishay Siliconix

    		 2,174 -
    RFQ
    		SIA430DJ-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 4.5V, 10V 13.5mOhm @ 7A, 10V 3V @ 250µA 18 nC @ 10 V ±20V 800 pF @ 10 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6
    SIA813DJ-T1-GE3

    SIA813DJ-T1-GE3

    MOSFET P-CH 20V 4.5A PPAK SC70-6

    Vishay Siliconix

    		 4,720 -
    RFQ

    -

    		 LITTLE FOOT® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Tc) 1.8V, 4.5V 94mOhm @ 2.8A, 4.5V 1V @ 250µA 13 nC @ 8 V ±8V 355 pF @ 10 V Schottky Diode (Isolated) 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SIA814DJ-T1-GE3

    SIA814DJ-T1-GE3

    MOSFET N-CH 30V 4.5A PPAK SC70-6

    Vishay Siliconix

    		 7,078 -
    RFQ
    		SIA814DJ-T1-GE3

    Datenblatt

         		LITTLE FOOT® PowerPAK® SC-70-6 Dual Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.5A (Tc) 2.5V, 10V 61mOhm @ 3.3A, 10V 1.5V @ 250µA 11 nC @ 10 V ±12V 340 pF @ 10 V Schottky Diode (Isolated) 1.9W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-70-6 Dual
    SIB414DK-T1-GE3

    SIB414DK-T1-GE3

    MOSFET N-CH 8V 9A PPAK SC75-6

    Vishay Siliconix

    		 3,229 -
    RFQ

    -

    		 TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8 V 9A (Tc) 1.2V, 4.5V 26mOhm @ 7.9A, 4.5V 1V @ 250µA 14.03 nC @ 5 V ±5V 732 pF @ 4 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-75-6
    SIR890DP-T1-GE3

    SIR890DP-T1-GE3

    MOSFET N-CH 20V 50A PPAK SO-8

    Vishay Siliconix

    		 8,915 -
    RFQ
    		SIR890DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 2.9mOhm @ 10A, 10V 2.6V @ 250µA 60 nC @ 10 V ±20V 2747 pF @ 10 V - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SI4866BDY-T1-GE3

    SI4866BDY-T1-GE3

    MOSFET N-CH 12V 21.5A 8SO

    Vishay Siliconix

    		 8,888 -
    RFQ
    		SI4866BDY-T1-GE3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 21.5A (Tc) 1.8V, 4.5V 5.3mOhm @ 12A, 4.5V 1V @ 250µA 80 nC @ 4.5 V ±8V 5020 pF @ 6 V - 2.5W (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IRFS3006-7PPBF

    IRFS3006-7PPBF

    MOSFET N-CH 60V 240A D2PAK

    Infineon Technologies

    		 7,695 -
    RFQ
    		IRFS3006-7PPBF

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 2.1mOhm @ 168A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8850 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    IRFS3006PBF

    IRFS3006PBF

    MOSFET N-CH 60V 195A D2PAK

    Infineon Technologies

    		 9,813 -
    RFQ
    		IRFS3006PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFS3107PBF

    IRFS3107PBF

    MOSFET N-CH 75V 195A D2PAK

    Infineon Technologies

    		 7,981 -
    RFQ
    		IRFS3107PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 195A (Tc) 10V 3mOhm @ 140A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9370 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFS4010-7PPBF

    IRFS4010-7PPBF

    MOSFET N-CH 100V 190A D2PAK

    Infineon Technologies

    		 8,464 -
    RFQ
    		IRFS4010-7PPBF

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 10V 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFS4010PBF

    IRFS4010PBF

    MOSFET N-CH 100V 180A D2PAK

    Infineon Technologies

    		 8,379 -
    RFQ
    		IRFS4010PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF7707GTRPBF

    IRF7707GTRPBF

    MOSFET P-CH 20V 7A 8TSSOP

    Infineon Technologies

    		 6,503 -
    RFQ
    		IRF7707GTRPBF

    Datenblatt

         		HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 2.5V, 4.5V 22mOhm @ 7A, 4.5V 1.2V @ 250µA 47 nC @ 4.5 V ±12V 2361 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    IRF6795MTR1PBF

    IRF6795MTR1PBF

    MOSFET N-CH 25V 32A DIRECTFET

    Infineon Technologies

    		 5,379 -
    RFQ
    		IRF6795MTR1PBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MX Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 4280 pF @ 13 V - 2.8W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MX
    IRF6633ATR1PBF

    IRF6633ATR1PBF

    MOSFET N-CH 20V 16A DIRECTFET

    Infineon Technologies

    		 5,388 -
    RFQ
    		IRF6633ATR1PBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric MU Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta), 69A (Tc) 4.5V, 10V 5.6mOhm @ 16A, 10V 2.2V @ 250µA 17 nC @ 4.5 V ±20V 1410 pF @ 10 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ MU
    STW23NM60ND

    STW23NM60ND

    MOSFET N-CH 600V 19.5A TO247-3

    STMicroelectronics

    		 8,801 -
    RFQ
    		STW23NM60ND

    Datenblatt

         		FDmesh™ II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 19.5A (Tc) 10V 180mOhm @ 10A, 10V 5V @ 250µA 70 nC @ 10 V ±25V 2050 pF @ 50 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-247-3
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