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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    2SK2266(TE24R,Q)

    2SK2266(TE24R,Q)

    MOSFET N-CH 60V 45A TO220SM

    Toshiba Semiconductor and Storage

    		 9,841 -
    RFQ
    		2SK2266(TE24R,Q)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta) 4V, 10V 30mOhm @ 25A, 10V 2V @ 1mA 60 nC @ 10 V ±20V 1800 pF @ 10 V - 65W (Tc) 150°C (TJ) - - Surface Mount TO-220SM
    2SK2376(Q)

    2SK2376(Q)

    MOSFET N-CH 60V 45A TO220FL

    Toshiba Semiconductor and Storage

    		 4,802 -
    RFQ
    		2SK2376(Q)

    Datenblatt

         		- TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 45A (Ta) 4V, 10V 17mOhm @ 25A, 10V 2V @ 1mA 110 nC @ 10 V ±20V 3350 pF @ 10 V - 100W (Tc) 150°C (TJ) - - Through Hole TO-220FL
    2SK3309(Q)

    2SK3309(Q)

    MOSFET N-CH 450V 10A TO220FL

    Toshiba Semiconductor and Storage

    		 8,487 -
    RFQ
    		2SK3309(Q)

    Datenblatt

         		- TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 450 V 10A (Ta) 10V 650mOhm @ 5A, 10V 5V @ 1mA 23 nC @ 10 V ±30V 920 pF @ 10 V - 65W (Tc) 150°C (TJ) - - Through Hole TO-220FL
    2SK3309(TE24L,Q)

    2SK3309(TE24L,Q)

    MOSFET N-CH 450V 10A TO220SM

    Toshiba Semiconductor and Storage

    		 2,032 -
    RFQ
    		2SK3309(TE24L,Q)

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 450 V 10A (Ta) 10V 650mOhm @ 5A, 10V 5V @ 1mA 23 nC @ 10 V ±30V 920 pF @ 10 V - 65W (Tc) 150°C (TJ) - - Surface Mount TO-220SM
    TK12A60U(Q,M)

    TK12A60U(Q,M)

    MOSFET N-CH 600V 12A TO220SIS

    Toshiba Semiconductor and Storage

    		 6,700 -
    RFQ
    		TK12A60U(Q,M)

    Datenblatt

         		DTMOSII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 400mOhm @ 6A, 10V 5V @ 1mA 14 nC @ 10 V ±30V 720 pF @ 10 V - 35W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK12J60U(F)

    TK12J60U(F)

    MOSFET N-CH 600V 12A TO3P

    Toshiba Semiconductor and Storage

    		 9,402 -
    RFQ
    		TK12J60U(F)

    Datenblatt

         		DTMOSII TO-3P-3, SC-65-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Ta) 10V 400mOhm @ 6A, 10V 5V @ 1mA 14 nC @ 10 V ±30V 720 pF @ 10 V - 144W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
    TK15J60U(F)

    TK15J60U(F)

    MOSFET N-CH 600V 15A TO3P

    Toshiba Semiconductor and Storage

    		 8,910 -
    RFQ
    		TK15J60U(F)

    Datenblatt

         		DTMOSII TO-3P-3, SC-65-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 5V @ 1mA 17 nC @ 10 V ±30V 950 pF @ 10 V - 170W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
    TK20J60U(F)

    TK20J60U(F)

    MOSFET N-CH 600V 20A TO3P

    Toshiba Semiconductor and Storage

    		 6,347 -
    RFQ
    		TK20J60U(F)

    Datenblatt

         		DTMOSII TO-3P-3, SC-65-3 Tray Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 190mOhm @ 10A, 10V 5V @ 1mA 27 nC @ 10 V ±30V 1470 pF @ 10 V - 190W (Tc) 150°C (TJ) - - Through Hole TO-3P(N)
    TK55D10J1(Q)

    TK55D10J1(Q)

    MOSFET N-CH 100V 55A TO220

    Toshiba Semiconductor and Storage

    		 3,005 -
    RFQ
    		TK55D10J1(Q)

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Ta) 4.5V, 10V 10.5mOhm @ 27A, 10V 2.3V @ 1mA 110 nC @ 10 V ±20V 5700 pF @ 10 V - 140W (Tc) 150°C (TJ) - - Through Hole TO-220(W)
    TK60D08J1(Q)

    TK60D08J1(Q)

    MOSFET N-CH 75V 60A TO220

    Toshiba Semiconductor and Storage

    		 9,983 -
    RFQ
    		TK60D08J1(Q)

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 60A (Ta) 4.5V, 10V 7.8mOhm @ 30A, 10V 2.3V @ 1mA 86 nC @ 10 V ±20V 5450 pF @ 10 V - 140W (Tc) 150°C (TJ) - - Through Hole TO-220(W)
    TK70D06J1(Q)

    TK70D06J1(Q)

    MOSFET N-CH 60V 70A TO220

    Toshiba Semiconductor and Storage

    		 6,899 -
    RFQ
    		TK70D06J1(Q)

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 70A (Ta) 4.5V, 10V 6.4mOhm @ 35A, 10V 2.3V @ 1mA 87 nC @ 10 V ±20V 5450 pF @ 10 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220(W)
    TPC6006-H(TE85L,F)

    TPC6006-H(TE85L,F)

    MOSFET N-CH 40V 3.9A VS-6

    Toshiba Semiconductor and Storage

    		 2,549 -
    RFQ
    		TPC6006-H(TE85L,F)

    Datenblatt

         		U-MOSIII-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 3.9A (Ta) 4.5V, 10V 75mOhm @ 1.9A, 10V 2.3V @ 1mA 4.4 nC @ 10 V ±20V 251 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
    TPC6104(TE85L,F,M)

    TPC6104(TE85L,F,M)

    MOSFET P-CH 20V 5.5A VS-6

    Toshiba Semiconductor and Storage

    		 6,047 -
    RFQ
    		TPC6104(TE85L,F,M)

    Datenblatt

         		U-MOSIII SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 40mOhm @ 2.8A, 4.5V 1.2V @ 200µA 19 nC @ 5 V ±8V 1430 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
    TPC6107(TE85L,F,M)

    TPC6107(TE85L,F,M)

    MOSFET P-CH 20V 4.5A VS-6

    Toshiba Semiconductor and Storage

    		 4,588 -
    RFQ
    		TPC6107(TE85L,F,M)

    Datenblatt

         		U-MOSIV SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2V, 4.5V 55mOhm @ 2.2A, 4.5V 1.2V @ 200µA 9.8 nC @ 5 V ±12V 680 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
    TPC8014(TE12L,Q,M)

    TPC8014(TE12L,Q,M)

    MOSFET N-CH 30V 11A 8SOP

    Toshiba Semiconductor and Storage

    		 2,801 -
    RFQ
    		TPC8014(TE12L,Q,M)

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 14mOhm @ 5.5A, 10V 2.5V @ 1mA 39 nC @ 10 V ±20V 1860 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    TPC8018-H(TE12LQM)

    TPC8018-H(TE12LQM)

    MOSFET N-CH 30V 18A 8SOP

    Toshiba Semiconductor and Storage

    		 6,240 -
    RFQ
    		TPC8018-H(TE12LQM)

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.6mOhm @ 9A, 10V 2.3V @ 1mA 38 nC @ 10 V ±20V 2265 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    TPC8021-H(TE12LQ,M

    TPC8021-H(TE12LQ,M

    MOSFET N-CH 30V 11A 8SOP

    Toshiba Semiconductor and Storage

    		 4,798 -
    RFQ
    		TPC8021-H(TE12LQ,M

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 17mOhm @ 5.5A, 10V 2.3V @ 1mA 11 nC @ 10 V ±20V 640 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    TPC8022-H(TE12LQ,M

    TPC8022-H(TE12LQ,M

    MOSFET N-CH 40V 7.5A 8SOP

    Toshiba Semiconductor and Storage

    		 3,273 -
    RFQ
    		TPC8022-H(TE12LQ,M

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 7.5A (Ta) 4.5V, 10V 27mOhm @ 3.8A, 10V 2.3V @ 1mA 11 nC @ 10 V ±20V 650 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    TPC8031-H(TE12LQM)

    TPC8031-H(TE12LQM)

    MOSFET N-CH 30V 11A 8SOP

    Toshiba Semiconductor and Storage

    		 7,968 -
    RFQ
    		TPC8031-H(TE12LQM)

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) - 13.3mOhm @ 5.5A, 10V 2.5V @ 1mA 21 nC @ 10 V - 2150 pF @ 10 V - - 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    TPC8032-H(TE12LQM)

    TPC8032-H(TE12LQM)

    MOSFET N-CH 30V 15A 8SOP

    Toshiba Semiconductor and Storage

    		 4,024 -
    RFQ
    		TPC8032-H(TE12LQM)

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) - 6.5mOhm @ 7.5A, 10V 2.5V @ 1mA 33 nC @ 10 V - 2846 pF @ 10 V - - 150°C (TJ) - - Surface Mount 8-SOP (5.5x6.0)
    Total 36284 Record«Prev1... 15721573157415751576157715781579...1815Next»
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