FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FDS6892AZ

FDS6892AZ

MOSFET 2N-CH 20V 7.5A 8SOIC

Fairchild Semiconductor

7,470 -
RFQ
FDS6892AZ

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7.5A 18mOhm @ 7.5A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1286pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FS10ASJ-2-T13#B00

FS10ASJ-2-T13#B00

MOSFET N-CH

Renesas Electronics Corporation

6,000 -
RFQ
FS10ASJ-2-T13#B00

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
SI4936DY

SI4936DY

MOSFET 2N-CH 30V 5.8A 8SOIC

Fairchild Semiconductor

5,278 -
RFQ
SI4936DY

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 5.8A (Ta) 37mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 460pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDW2501N

FDW2501N

MOSFET 2N-CH 20V 6A 8TSSOP

Fairchild Semiconductor

321,187 -
RFQ
FDW2501N

Datenblatt

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 6A 18mOhm @ 6A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1290pF @ 10V 600mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
FDMS7606

FDMS7606

MOSFET 2N-CH 30V 11.5A POWER56

Fairchild Semiconductor

2,540 -
RFQ
FDMS7606

Datenblatt

PowerTrench® 8-PowerWDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 11.5A, 12A 11.4mOhm @ 11.5A, 10V 3V @ 250µA 22nC @ 10V 1400pF @ 15V 1W - - - Surface Mount Power56
IRFH4257DTRPBF

IRFH4257DTRPBF

MOSFET 2N-CH 25V 25A PQFN

International Rectifier

1,834 -
RFQ
IRFH4257DTRPBF

Datenblatt

HEXFET® 8-PowerVDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 25A 3.4mOhm @ 25A, 10V 2.1V @ 35µA 15nC @ 4.5V 1321pF @ 13V 25W, 28W -55°C ~ 150°C (TJ) - - Surface Mount Dual PQFN (5x4)
FDG1024NZ

FDG1024NZ

MOSFET 2N-CH 20V 1.2A SC88

onsemi

13,774 -
RFQ
FDG1024NZ

Datenblatt

PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 1.2A 175mOhm @ 1.2A, 4.5V 1V @ 250µA 2.6nC @ 4.5V 150pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
G1008B

G1008B

MOSFET 100V 8A 8SOP

Goford Semiconductor

3,240 -
RFQ
G1008B

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) - - 100V 8A (Tc) 130mOhm @ 2A, 10V 3V @ 250µA 15.5nC @ 10V 690pF @ 25V 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FDMA1023PZ-F106

FDMA1023PZ-F106

MOSFET 2P-CH 20V 3.7A 6MICROFET

onsemi

7,147 -
RFQ
FDMA1023PZ-F106

Datenblatt

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 3.7A (Ta) 72mOhm @ 3.7A, 4.5V 1V @ 250µA 12nC @ 4.5V 655pF @ 10V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
EFC4621R-TR

EFC4621R-TR

MOSFET 2N-CH EFCP1616

onsemi

10,000 -
RFQ
EFC4621R-TR

Datenblatt

- 4-XFBGA, FCBGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 2.5V Drive - - - - 29nC @ 4.5V - 1.6W 150°C (TJ) - - Surface Mount EFCP1616-4CE-022
SI4948BEY

SI4948BEY

MOSFET 2P-CH 60V 2.4A 8SOP

UMW

2,795 -
RFQ
SI4948BEY

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 60V 2.4A (Ta) 120mOhm @ 3.1A, 10V 3V @ 250µA 22nC @ 10V - 1.4W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOP
FDS6993

FDS6993

MOSFET 2P-CH 30V/12V 4.3A 8SOIC

Fairchild Semiconductor

10,200 -
RFQ
FDS6993

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V, 12V 4.3A, 6.8A 55mOhm @ 4.3A, 10V 3V @ 250µA 7.7nC @ 5V 530pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDS6990S

FDS6990S

MOSFET 2N-CH 30V 7.5A 8SOIC

Fairchild Semiconductor

5,335 -
RFQ
FDS6990S

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 7.5A (Ta) 22mOhm @ 7.5A, 10V 3V @ 1mA 16nC @ 5V 1233pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDS8926

FDS8926

MOSFET 2N-CH 30V 5.5A 8-SO

Fairchild Semiconductor

2,465 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
G18NP06Y

G18NP06Y

MOSFET N/P-CH 60V 18A TO252-4

Goford Semiconductor

2,390 -
RFQ
G18NP06Y

Datenblatt

- TO-252-5, DPAK (4 Leads + Tab), TO-252AD Cut Tape (CT) Active MOSFET (Metal Oxide) N and P-Channel, Common Drain - 60V 18A (Tc) 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V 2.5V @ 250µA, 3.5V @ 250µA 22nC @ 10V, 25nC @ 10V 1350pF @ 30V, 2610pF @ 30V 45W (Tc), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4
IRF7342TR

IRF7342TR

MOSFET 2P-CH 55V 3.4A 8SOP

UMW

3,000 -
RFQ
IRF7342TR

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel - 55V 3.4A (Tc) 105mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FDMS1D2N03DSD

FDMS1D2N03DSD

MOSFET 2N-CH 30V 19A 8PQFN

onsemi

2,487 -
RFQ
FDMS1D2N03DSD

Datenblatt

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V 2.5V @ 320µA, 3V @ 1mA 33nC @ 10V, 117nC @ 10V 1410pF @ 15V, 4860pF @ 15V 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
RF1S50N06SM9AS2551

RF1S50N06SM9AS2551

MOSFET 60V 50A

Harris Corporation

653 -
RFQ
RF1S50N06SM9AS2551

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
G1K2C10S2

G1K2C10S2

MOSFET 100V 3A/3.5A 8SOP

Goford Semiconductor

4,000 -
RFQ
G1K2C10S2

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 100V 3A (Tc), 3.5A (Tc) 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V 2.5V @ 250µA 22nC @ 10V, 23nC @ 10V 668pF @ 50V, 1732pF @ 50V 2W (Tc), 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G170P03S2

G170P03S2

MOSFET 2P-CH 30V 9A 8SOP

Goford Semiconductor

3,359 -
RFQ
G170P03S2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active - 2 P-Channel (Dual) - 30V 9A (Tc) 25mOhm @ 5A, 4.5V 2.5V @ 250µA 18nC @ 10V 1786pF @ 4.5V 1.4W (Tc) -55°C ~ 150°C (Tc) - - Surface Mount 8-SOP
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