FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FDMS1D2N03DSD

FDMS1D2N03DSD

MOSFET 2N-CH 30V 19A 8PQFN

onsemi

2,487 -
RFQ
FDMS1D2N03DSD

Datenblatt

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V 2.5V @ 320µA, 3V @ 1mA 33nC @ 10V, 117nC @ 10V 1410pF @ 15V, 4860pF @ 15V 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
RF1S50N06SM9AS2551

RF1S50N06SM9AS2551

MOSFET 60V 50A

Harris Corporation

653 -
RFQ
RF1S50N06SM9AS2551

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
G1K2C10S2

G1K2C10S2

MOSFET 100V 3A/3.5A 8SOP

Goford Semiconductor

4,000 -
RFQ
G1K2C10S2

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 100V 3A (Tc), 3.5A (Tc) 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V 2.5V @ 250µA 22nC @ 10V, 23nC @ 10V 668pF @ 50V, 1732pF @ 50V 2W (Tc), 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G170P03S2

G170P03S2

MOSFET 2P-CH 30V 9A 8SOP

Goford Semiconductor

3,359 -
RFQ
G170P03S2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active - 2 P-Channel (Dual) - 30V 9A (Tc) 25mOhm @ 5A, 4.5V 2.5V @ 250µA 18nC @ 10V 1786pF @ 4.5V 1.4W (Tc) -55°C ~ 150°C (Tc) - - Surface Mount 8-SOP
IRF7313TR

IRF7313TR

MOSFET 2N-CH 30V 6.5A 8SOP

UMW

2,990 -
RFQ
IRF7313TR

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 6.5A (Ta) 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FS30ASJ-2-T13#B00

FS30ASJ-2-T13#B00

MOSFET N-CH

Renesas Electronics Corporation

21,000 -
RFQ
FS30ASJ-2-T13#B00

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
PJQ2815_R1_00001

PJQ2815_R1_00001

MOSFET 2P-CH 20V 4.2A 6DFN

Panjit International Inc.

7,625 -
RFQ
PJQ2815_R1_00001

Datenblatt

- 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 4.2A (Ta) 52mOhm @ 4.2A, 4.5V 900mV @ 250µA 24nC @ 4.5V 907pF @ 10V 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount DFN2020-6L
NDS8947

NDS8947

MOSFET 2P-CH 30V 4A 8SOIC

Fairchild Semiconductor

4,649 -
RFQ
NDS8947

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4A 65mOhm @ 4A, 10V 2.8V @ 250µA 30nC @ 10V 690pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
PJQ4848P_R2_00001

PJQ4848P_R2_00001

MOSFET 2N-CH 40V 9A 8DFN

Panjit International Inc.

3,611 -
RFQ
PJQ4848P_R2_00001

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 9A (Ta), 37A (Tc) 15mOhm @ 8A, 10V 2.5V @ 250µA 10nC @ 4.5V 1040pF @ 20V 2W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN3333B-8
FS30ASJ-06F#B00

FS30ASJ-06F#B00

MOSFET N-CH

Renesas Electronics Corporation

3,319 -
RFQ
FS30ASJ-06F#B00

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
UPA2751GR-E1-AT

UPA2751GR-E1-AT

MOSFET 2N-CH 30V 9A/8A 8PSOP

Renesas Electronics Corporation

2,500 -
RFQ
UPA2751GR-E1-AT

Datenblatt

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 9A, 8A 15.5mOhm @ 4.5A, 10V 2.5V @ 1mA 21nC @ 10V 1040pF @ 10V 2W - - - Surface Mount 8-PSOP
UPA2350T1G(1)-E4-A

UPA2350T1G(1)-E4-A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

110,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
UPA2792AGR-E1-AT

UPA2792AGR-E1-AT

MOSFET N/P-CH 30V 10A 8SOP

Renesas Electronics Corporation

107,226 -
RFQ
UPA2792AGR-E1-AT

Datenblatt

- 8-PowerSOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 10A 12.5mOhm @ 5A, 10V - 42nC @ 10V 2200pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
EFC4C012NLTDG

EFC4C012NLTDG

MOSFET 2N-CH 30V 30A 6WLCSP

onsemi

4,995 -
RFQ
EFC4C012NLTDG

Datenblatt

- 6-SMD, No Lead Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - - - - 2.2V @ 1mA 18nC @ 4.5V - 2.5W (Ta) 150°C (TJ) - - Surface Mount 6-WLCSP (3.5x1.9)
NTMS4503NR2G-001

NTMS4503NR2G-001

MOSFET N-CH 28V 9A

onsemi

106,942 -
RFQ
NTMS4503NR2G-001

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
GSFQ6806

GSFQ6806

MOSFET 2N-CH 60V 20A 8SOP

Good-Ark Semiconductor

5,634 -
RFQ
GSFQ6806

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 20A (Tc) 28mOhm @ 20A, 10V 2.5V @ 250µA 42nC @ 10V 2440pF @ 20V 2.1W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FDMA1028NZ-F021

FDMA1028NZ-F021

MOSFET 2N-CH 20V 3.7A 6MICROFET

onsemi

3,000 -
RFQ
FDMA1028NZ-F021

Datenblatt

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.7A 68mOhm @ 3.7A, 4.5V 1.5V @ 250µA 6nC @ 4.5V 340pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
FDMS7600AS

FDMS7600AS

MOSFET 2N-CH 30V 12A/22A POWER56

Fairchild Semiconductor

499 -
RFQ
FDMS7600AS

Datenblatt

PowerTrench® 8-PowerWDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12A, 22A 7.5mOhm @ 12A, 10V 3V @ 250µA 28nC @ 10V 1750pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
G20N06D52

G20N06D52

MOSFET 2N-CH 60V 20A 8DFN

Goford Semiconductor

6,348 -
RFQ
G20N06D52

Datenblatt

TrenchFET® 8-PowerTDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 20A (Tc) 30mOhm @ 20A, 10V 2.5V @ 250µA 25nC @ 10V 1326pF @ 30V 48W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (4.9x5.75)
IRF9395MTRPBF

IRF9395MTRPBF

MOSFET 2P-CH 30V 14A DIRECTFET

International Rectifier

141,429 -
RFQ
IRF9395MTRPBF

Datenblatt

DirectFET™ DirectFET™ Isometric MC Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 14A (Ta), 75A (Tc) 7mOhm @ 14A, 10V 2.4V @ 50µA 64nC @ 4.5V 3241pF @ 15V 2.1W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric MC
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