FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
G170P02D32

G170P02D32

MOSFET 2P-CH 20V 20A 8DFN

Goford Semiconductor

4,898 -
RFQ
G170P02D32

Datenblatt

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 20V 20A (Tc) 21mOhm @ 6A, 4.5V 1V @ 250µA 30nC @ 10V 2193pF @ 10V 15W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05) Dual
G220P03D32

G220P03D32

MOSFET 2P-CH 30V 12A 8DFN

Goford Semiconductor

4,703 -
RFQ
G220P03D32

Datenblatt

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 30V 12A (Tc) 22mOhm @ 3A, 10V 2V @ 250µA 25nC @ 10V 1305pF @ 15V 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05) Dual
FDY3000NZ

FDY3000NZ

MOSFET 2N-CH 20V 0.6A SOT563F

onsemi

1,014 -
RFQ
FDY3000NZ

Datenblatt

PowerTrench® SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 600mA 700mOhm @ 600mA, 4.5V 1.3V @ 250µA 1.1nC @ 4.5V 60pF @ 10V 446mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563F
PMDPB38UNE,115

PMDPB38UNE,115

MOSFET 2N-CH 20V 4A 6HUSON

NXP USA Inc.

6,770 -
RFQ
PMDPB38UNE,115

Datenblatt

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4A 46mOhm @ 3A, 4.5V 1V @ 250µA 4.4nC @ 4.5V 268pF @ 10V 510mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
FDG6301N

FDG6301N

MOSFET 2N-CH 25V 0.22A SC88

onsemi

59,154 -
RFQ
FDG6301N

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 220mA 4Ohm @ 220mA, 4.5V 1.5V @ 250µA 0.4nC @ 4.5V 9.5pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
ECH8659-TL-W

ECH8659-TL-W

MOSFET 2N-CH 30V 7A SOT28

onsemi

4,791 -
RFQ
ECH8659-TL-W

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 30V 7A 24mOhm @ 3.5A, 10V 2.6V @ 1mA 11.8nC @ 10V 710pF @ 10V 1.3W 150°C (TJ) - - Surface Mount SOT-28FL/ECH8
G350N06D32

G350N06D32

MOSFET 2N-CH 60V 10A 8DFN

Goford Semiconductor

3,067 -
RFQ
G350N06D32

Datenblatt

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 10A (Tc) 35mOhm @ 5A, 10V 2.5V @ 250µA 25nC @ 10V 1330pF @ 30V 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
SI4963DY

SI4963DY

MOSFET 2P-CH 20V 6.2A 8SOIC

Fairchild Semiconductor

37,162 -
RFQ
SI4963DY

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 6.2A (Ta) 33mOhm @ 6.2A, 4.5V 1.5V @ 250µA 20nC @ 4.5V 1456pF @ 10V 900mW (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
GSFP34010

GSFP34010

MOSFET 2N-CH 100V 20A 8PPAK

Good-Ark Semiconductor

8,560 -
RFQ
GSFP34010

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 20A (Tc) 34mOhm @ 10A, 10V 2.8V @ 250µA 16nC @ 10V 1051pF @ 50V 19W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (5x6)
SI1023X-T1-GE3

SI1023X-T1-GE3

MOSFET 2P-CH 20V 0.37A SC89

Vishay Siliconix

4,680 -
RFQ
SI1023X-T1-GE3

Datenblatt

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 370mA 1.2Ohm @ 350mA, 4.5V 450mV @ 250µA (Min) 1.5nC @ 4.5V - 250mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
G220P03S2

G220P03S2

MOSFET 2P-CH 30V 9A 8SOP

Goford Semiconductor

3,935 -
RFQ
G220P03S2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 30V 9A (Tc) 22mOhm @ 3A, 10V 2V @ 250µA 24.5nC @ 10V 1277pF @ 15V 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
SI4953DY

SI4953DY

MOSFET 2P-CH 30V 4.9A 8SOIC

Fairchild Semiconductor

2,500 -
RFQ
SI4953DY

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 4.9A (Ta) 53mOhm @ 4.9A, 10V 1V @ 250µA 25nC @ 10V 750pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
G4953S

G4953S

MOSFET 2P-CH 30V 5A 8SOP

Goford Semiconductor

1,694 -
RFQ
G4953S

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 5A (Tc) 45mOhm @ 5A, 10V 3V @ 250µA 11nC @ 10V 520pF @ 15V 1.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
PMDPB28UN,115

PMDPB28UN,115

MOSFET 2N-CH 20V 4.6A 6HUSON

NXP USA Inc.

9,645 -
RFQ
PMDPB28UN,115

Datenblatt

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 4.6A 37mOhm @ 4.6A, 4.5V 1V @ 250µA 4.7nC @ 4.5V 265pF @ 10V 510mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
FDW2506P

FDW2506P

MOSFET 2P-CH 20V 5.3A 8TSSOP

Fairchild Semiconductor

102,545 -
RFQ
FDW2506P

Datenblatt

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 5.3A 22mOhm @ 5.3A, 4.5V 1.5V @ 250µA 34nC @ 4.5V 1015pF @ 10V 600mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
NDH8304P

NDH8304P

MOSFET 2P-CH 20V 2.7A SUPERSOT-8

Fairchild Semiconductor

42,000 -
RFQ
NDH8304P

Datenblatt

- 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.7A 70mOhm @ 2.7A, 4.5V 1V @ 250µA 23nC @ 4.5V 865pF @ 10V 800mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
NDS9947

NDS9947

MOSFET 2P-CH 20V 3.5A 8SOIC

Fairchild Semiconductor

12,500 -
RFQ
NDS9947

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3.5A 100mOhm @ 3.5A, 10V 3V @ 250µA 13nC @ 10V 542pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FTD1011-TL-E

FTD1011-TL-E

PCH+PCH 2.5V DRIVE SERIES

onsemi

9,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
SI1016X-T1-GE3

SI1016X-T1-GE3

MOSFET N/P-CH 20V 0.485A SC89

Vishay Siliconix

7,039 -
RFQ
SI1016X-T1-GE3

Datenblatt

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 485mA, 370mA 700mOhm @ 600mA, 4.5V 1V @ 250µA 0.75nC @ 4.5V - 250mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
SI1034X-T1-GE3

SI1034X-T1-GE3

MOSFET 2N-CH 20V 0.18A SC89

Vishay Siliconix

4,987 -
RFQ
SI1034X-T1-GE3

Datenblatt

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 180mA 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75nC @ 4.5V - 250mW -55°C ~ 150°C (TJ) - - Surface Mount SC-89 (SOT-563F)
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