FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis
Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
UPA2450CTL-E1-A

UPA2450CTL-E1-A

MOSFET 2N-CH 20V 8.6A 6HWSON

Renesas Electronics Corporation

21,000 -
RFQ
UPA2450CTL-E1-A

Datenblatt

- 6-VFDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 8.6A 17.5mOhm @ 4A, 4.5V 1.5V @ 1mA 6nC @ 4V 564pF @ 10V 700mW - - - Surface Mount 6-HWSON
FX205-TL-E-ON

FX205-TL-E-ON

MOSFET P-CH

onsemi

14,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
UPA2650T1E-E2-AT

UPA2650T1E-E2-AT

MOSFET 2N-CH 20V 3.8A 6MLP

Renesas Electronics Corporation

270,000 -
RFQ
UPA2650T1E-E2-AT

Datenblatt

- 6-VDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.8A 65mOhm @ 3A, 10V 2V @ 250µA 2.9nC @ 4.5V 220pF @ 10V 1.1W - - - Surface Mount 6-MLP (3x3)
G085C03D32

G085C03D32

MOSFET N/P-CH 30V 28A 8DFN

Goford Semiconductor

4,990 -
RFQ
G085C03D32

Datenblatt

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) N and P-Channel - 30V 28A (Tc), 12A (Tc) 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V 2V @ 250µA 18nC @ 10V, 25nC @ 10V 1085pF @ 15V, 1352pF @ 15V 13W (Tc), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
FDS6912A

FDS6912A

MOSFET 2N-CH 30V 6A 8SOP

UMW

3,000 -
RFQ
FDS6912A

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 6A (Ta) 28mOhm @ 6A, 10V 3V @ 250µA 8.1nC @ 5V 575pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
PJX8802_R1_00001

PJX8802_R1_00001

MOSFET 2N-CH 20V 0.7A SOT563

Panjit International Inc.

2,829 -
RFQ
PJX8802_R1_00001

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 700mA (Ta) 150mOhm @ 700mA, 4.5V 1V @ 250µA 1.6nC @ 4.5V 92pF @ 10V 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
NVMJD016N06CTWG

NVMJD016N06CTWG

MOSFET N-CH 60V LFPAK56

onsemi

3,000 -
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
FW217-NMM-TL-E

FW217-NMM-TL-E

MOSFET N-CH

onsemi

104,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
UPA2590T1H-T1-AT

UPA2590T1H-T1-AT

MOSFET N/P-CH 30V 4.5A 8VSOF

Renesas Electronics Corporation

66,000 -
RFQ
UPA2590T1H-T1-AT

Datenblatt

- 8-SMD, Flat Lead Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4.5A 50mOhm @ 2A, 10V 2.5V @ 1mA 6.6nC @ 10V 310pF @ 10V 1.24W 150°C (TJ) - - Surface Mount 8-VSOF
FW217-NMM-TL-E-SY

FW217-NMM-TL-E-SY

MOSFET N-CH

Sanyo

40,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
FDW2507N

FDW2507N

MOSFET 2N-CH 20V 7.5A 8TSSOP

Fairchild Semiconductor

25,937 -
RFQ
FDW2507N

Datenblatt

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7.5A 19mOhm @ 7.5A, 4.5V 1.5V @ 250µA 28nC @ 4.5V 2152pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
UPA2590T1H-T2-AT

UPA2590T1H-T2-AT

MOSFET N/P-CH 30V 4.5A 8VSOF

Renesas Electronics Corporation

9,000 -
RFQ
UPA2590T1H-T2-AT

Datenblatt

- 8-SMD, Flat Lead Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4.5A 50mOhm @ 2A, 10V 2.5V @ 1mA 6.6nC @ 10V 310pF @ 10V 1.24W 150°C (TJ) - - Surface Mount 8-VSOF
FDS6892A

FDS6892A

MOSFET 2N-CH 20V 7.5A 8SOIC

Fairchild Semiconductor

54,014 -
RFQ
FDS6892A

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7.5A 18mOhm @ 7.5A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1333pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
HUFA76409T3ST

HUFA76409T3ST

MOSFET N-CH

Fairchild Semiconductor

20,736 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
SFT1427-TL-E

SFT1427-TL-E

MOSFET N-CH

Sanyo

9,800 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
FW257-TL-E

FW257-TL-E

MOSFET N-CH

Sanyo

4,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
FW257-TL-E-ON

FW257-TL-E-ON

MOSFET N-CH

onsemi

4,000 -
RFQ
FW257-TL-E-ON

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
ECH8674-TL-H

ECH8674-TL-H

MOSFET P-CH DUAL ECH8

onsemi

3,000 -
RFQ

-

* 8-SMD, Flat Leads Bulk Obsolete - - - - - - - - - - - - - Surface Mount SOT-28FL/ECH8
ECH8674-TL-H

ECH8674-TL-H

MOSFET 2P-CH 12V 5A SOT28

Sanyo

3,000 -
RFQ
ECH8674-TL-H

Datenblatt

- 8-SMD, Flat Lead Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 12V 5A (Ta) 41mOhm @ 3A, 4.5V 1.3V @ 1mA 6.9nC @ 4.5V 660pF @ 6V 1.3W (Ta) 150°C - - Surface Mount SOT-28FL/ECH8
FDW2508P

FDW2508P

MOSFET 2P-CH 12V 6A 8TSSOP

Fairchild Semiconductor

274,717 -
RFQ
FDW2508P

Datenblatt

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 6A 18mOhm @ 6A, 4.5V 1.5V @ 250µA 36nC @ 4.5V 2644pF @ 6V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
Total 5737 Record«Prev1... 979899100101102103104...287Next»
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer