FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
UPA2350T1G(2)-E4-A

UPA2350T1G(2)-E4-A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

15,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
SSFB12N05

SSFB12N05

MOSFET N/P-CH 12V 5A 6DFN

Good-Ark Semiconductor

7,770 -
RFQ
SSFB12N05

Datenblatt

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 12V 5A (Ta) 32mOhm @ 5A, 4.5V, 74mOhm @ 4.5A, 4.5V 1V @ 250µA 6.6nC @ 4.5V, 9.2nC @ 4.5V 495pF @ 6V, 520pF @ 6V 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
PJX8807_R1_00001

PJX8807_R1_00001

MOSFET 2P-CH 20V 0.5A SOT563

Panjit International Inc.

8,000 -
RFQ
PJX8807_R1_00001

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 500mA (Ta) 1.2Ohm @ 500mA, 4.5V 1V @ 250µA 1.4nC @ 4.5V 38pF @ 10V 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
CEM9926A

CEM9926A

MOSFET 2N-CH 20V 7A 8SOP

UMW

3,000 -
RFQ
CEM9926A

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 20V 7A (Ta) 26mOhm @ 7A, 4.5V 800mV @ 250µA 15.2nC @ 4.5V 1050pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FDC6322C

FDC6322C

MOSFET N/P-CH 25V 0.22A SSOT6

Fairchild Semiconductor

364,497 -
RFQ
FDC6322C

Datenblatt

- SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 25V 220mA, 460mA 4Ohm @ 400mA, 4.5V 1.5V @ 250µA 0.7nC @ 4.5V 9.5pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
FDS6986S

FDS6986S

MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC

Fairchild Semiconductor

134,344 -
RFQ
FDS6986S

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.5A, 7.9A 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V 3V @ 250µA, 3V @ 1mA 9nC @ 5V, 16nC @ 5V 695pF @ 10V, 1233pF @ 10V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTD4906NAT4H

NTD4906NAT4H

MOSFET N-CH 30V 54A

onsemi

57,500 -
RFQ
NTD4906NAT4H

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
FDMS5361L

FDMS5361L

MOSFET N-CH

Fairchild Semiconductor

3,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
PJX138K-AU_R1_000A1

PJX138K-AU_R1_000A1

MOSFET 2N-CH 50V 0.35A SOT563

Panjit International Inc.

2,253 -
RFQ
PJX138K-AU_R1_000A1

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 350mA (Ta) 1.6Ohm @ 500mA, 10V 1.5V @ 250µA 1nC @ 4.5V 50pF @ 25V 223mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
IRFR420U

IRFR420U

MOSFET N-CH 500V 2.5A

Harris Corporation

1,995 -
RFQ
IRFR420U

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
G2K3N10L6

G2K3N10L6

MOSFET 2N-CH 100V 3A SOT23-6L

Goford Semiconductor

1,877 -
RFQ
G2K3N10L6

Datenblatt

TrenchFET® SOT-23-6 Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 3A (Tc) 220mOhm @ 2A, 10V 2.2V @ 250µA 4.8nC @ 4.5V 536pF @ 50V 1.67W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
CPH6635-TL-H

CPH6635-TL-H

MOSFET N/P-CH 30V/20V 0.4A 6CPH

onsemi

8,673 -
RFQ
CPH6635-TL-H

Datenblatt

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 20V 400mA, 1.5A 3.7Ohm @ 80mA, 4V - 1.58nC @ 10V 7pF @ 10V 800mW 150°C (TJ) - - Surface Mount 6-CPH
EFC6612R-A-TF

EFC6612R-A-TF

MOSFET 2N-CH 6CSP

onsemi

6,664 -
RFQ

-

- 6-SMD, No Lead Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 2.5V Drive - - - - 27nC @ 4.5V - 2.5W - - - Surface Mount 6-CSP (1.77x3.54)
EFC6611R-A-TF

EFC6611R-A-TF

MOSFET 2N-CH 12V 27A EFCP

onsemi

170,000 -
RFQ

-

* 6-SMD, No Lead Bulk Active - - - - - - - - - - - - - Surface Mount 6-CSP (1.77x3.54)
HUF76113DK8T

HUF76113DK8T

MOSFET 2N-CH 30V 6A US8

Fairchild Semiconductor

42,500 -
RFQ
HUF76113DK8T

Datenblatt

UltraFET® 8-VFSOP (0.091", 2.30mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A (Ta) 32mOhm @ 6A, 10V 3V @ 250µA 19.2nC @ 10V 605pF @ 25V 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount US8
FTD2019S-TL-E

FTD2019S-TL-E

NCH+NCH 2.5V DRIVE SERIES

onsemi

8,970 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
FDS9933BZ

FDS9933BZ

MOSFET 2P-CH 20V 4.9A 8SOIC

Fairchild Semiconductor

8,216 -
RFQ
FDS9933BZ

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.9A 46mOhm @ 4.9A, 4.5V 1.5V @ 250µA 15nC @ 4.5V 985pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFR2209A

IRFR2209A

MOSFET 200V 4.6A

Harris Corporation

2,270 -
RFQ
IRFR2209A

Datenblatt

- - Bulk Active - - - - - - - - - - - - - - -
IRFR2209AS2463

IRFR2209AS2463

MOSFET TO252

Harris Corporation

1,793 -
RFQ
IRFR2209AS2463

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
FX205-TL-E

FX205-TL-E

MOSFET P-CH

Sanyo

25,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
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