FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FDS4501H

FDS4501H

MOSFET N/P-CH 30V/20V 9.3A 8SOIC

Fairchild Semiconductor

20,450 -
RFQ
FDS4501H

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 20V 9.3A, 5.6A 18mOhm @ 9.3A, 10V 3V @ 250µA 27nC @ 4.5V 1958pF @ 10V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
UPA2350T1G-E4-A

UPA2350T1G-E4-A

MOSFET 2N-CH 20V 6A 4FLIPCHIP

Renesas Electronics Corporation

5,000 -
RFQ
UPA2350T1G-E4-A

Datenblatt

- 4-XBGA, 4-FCBGA Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 6A 35mOhm @ 3A, 4.5V 1.5V @ 1mA 8.6nC @ 4V 542pF @ 10V 1.3W - - - Surface Mount 4-FlipChip
RF1S17N06L

RF1S17N06L

MOSFET

Harris Corporation

4,370 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
NDH8321C

NDH8321C

MOSFET N/P-CH 20V 3.8A SUPERSOT

Fairchild Semiconductor

3,000 -
RFQ
NDH8321C

Datenblatt

- 8-TSOP (0.130", 3.30mm Width) Bulk Active MOSFET (Metal Oxide) N and P-Channel - 20V 3.8A (Ta), 2.7A (Ta) 35mOhm @ 3.8A, 4.5V, 70mOhm @ 2.7A, 4.5V 1V @ 250µA 28nC @ 4.5V, 23nC @ 4.5V 700pF @ 10V, 865pF @ 10V 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
FDMS9408

FDMS9408

MOSFET N-CH

Fairchild Semiconductor

1,838 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
FS5AS-06-T13#B21

FS5AS-06-T13#B21

MOSFET N-CH

Renesas Electronics Corporation

63,000 -
RFQ
FS5AS-06-T13#B21

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
FDMS3668S

FDMS3668S

MOSFET 2N-CH 30V 13A/18A POWER56

onsemi

7,854 -
RFQ
FDMS3668S

Datenblatt

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 18A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1765pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
FDR8702H

FDR8702H

MOSFET N/P-CH 20V 3.6A SUPERSOT

Fairchild Semiconductor

254,870 -
RFQ
FDR8702H

Datenblatt

PowerTrench® 8-TSOP (0.130", 3.30mm Width) Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 3.6A, 2.6A 38mOhm @ 3.6A, 4.5V 1.5V @ 250µA 10nC @ 4.5V 650pF @ 10V 800mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
RF1K4915496

RF1K4915496

MOSFET 2N-CH 60V 2A 8SOIC

Fairchild Semiconductor

2,500 -
RFQ
RF1K4915496

Datenblatt

LittleFET™ 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 2A (Ta) 130mOhm @ 2A, 10V 4V @ 250µA 32nC @ 20V 340pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRF7316GTRPBF

IRF7316GTRPBF

MOSFET 2P-CH 30V 4.9A 8SO

Infineon Technologies

2,290 -
RFQ
IRF7316GTRPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
AUIRF7103QTR

AUIRF7103QTR

MOSFET 2N-CH 50V 3A 8SOIC

Infineon Technologies

8,335 -
RFQ
AUIRF7103QTR

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 3A 130mOhm @ 3A, 10V 3V @ 250µA 15nC @ 10V 255pF @ 25V 2.4W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
NDH8521C

NDH8521C

MOSFET N/P-CH 30V 3.8A SUPERSOT

Fairchild Semiconductor

39,000 -
RFQ
NDH8521C

Datenblatt

- 8-TSOP (0.130", 3.30mm Width) Bulk Active MOSFET (Metal Oxide) N and P-Channel - 30V 3.8A (Ta), 2.7A (Ta) 33mOhm @ 3.8A, 10V, 70mOhm @ 2.7A, 10V 2V @ 250µA 25nC @ 10V, 27nC @ 10V 500pF @ 15V, 560pF @ 15V 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-8
FDS6930A

FDS6930A

MOSFET 2N-CH 30V 5.5A 8SOIC

onsemi

8,113 -
RFQ
FDS6930A

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.5A 40mOhm @ 5.5A, 10V 3V @ 250µA 7nC @ 5V 460pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
AO4630

AO4630

MOSFET N/P-CH 30V 5A/7A 8SOIC

Alpha & Omega Semiconductor Inc.

30,492 -
RFQ
AO4630

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs - N and P-Channel Complementary - 30V 5A, 7A 28mOhm @ 7A, 10V 1.45V @ 250µA 20nC @ 10V 670pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDW2510NZ

FDW2510NZ

MOSFET 2N-CH 20V 6.4A 8TSSOP

Fairchild Semiconductor

19,149 -
RFQ
FDW2510NZ

Datenblatt

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 6.4A 24mOhm @ 6.4A, 4.5V 1.5V @ 250µA 12nC @ 4.5V 870pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
SI1902DL-T1-GE3

SI1902DL-T1-GE3

MOSFET 2N-CH 20V 0.66A SC70-6

Vishay Siliconix

12,902 -
RFQ
SI1902DL-T1-GE3

Datenblatt

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 660mA 385mOhm @ 660mA, 4.5V 1.5V @ 250µA 1.2nC @ 4.5V - 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
NDS8936

NDS8936

MOSFET 2N-CH 30V 5.3A 8SOIC

Fairchild Semiconductor

5,041 -
RFQ
NDS8936

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5.3A 35mOhm @ 5.3A, 10V 2.8V @ 250µA 30nC @ 10V 720pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDU6670AS

FDU6670AS

MOSFET N-CH 30V

Fairchild Semiconductor

3,585 -
RFQ
FDU6670AS

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
SI1902DL-T1-BE3

SI1902DL-T1-BE3

MOSFET 2N-CH 20V 0.66A SC70-6

Vishay Siliconix

2,964 -
RFQ
SI1902DL-T1-BE3

Datenblatt

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 660mA (Ta) 385mOhm @ 660mA, 4.5V 1.5V @ 250µA 1.2nC @ 4.5V - 270mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
UPA1872BGR-9JG-E1-A

UPA1872BGR-9JG-E1-A

MOSFET 2N-CH 20V 10A 8TSSOP

Renesas Electronics Corporation

230,594 -
RFQ
UPA1872BGR-9JG-E1-A

Datenblatt

- 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 10A 13mOhm @ 5A, 4.5V 1.5V @ 1mA 10nC @ 4V 945pF @ 10V 2W - - - Surface Mount 8-TSSOP
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