Einzelne Bipolartransistoren

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Einzelne Bipolartransistoren

TomatoElec liefert einzelne Bipolartransistoren für Industrie, Automotive, Kommunikation, Steuerung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne BJT-Transistorprodukte für Verstärkungs-, Schalt- und Signalsteuerungsschaltungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Bipolartransistoren und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Transistoren, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SC3669-Y(T2OMI,FM

2SC3669-Y(T2OMI,FM

TRANS NPN 80V 2A MSTM

Toshiba Semiconductor and Storage

2,887 -
RFQ
2SC3669-Y(T2OMI,FM

Datenblatt

- SC-71 Bulk Obsolete NPN 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) - - Through Hole MSTM
2SC3669-Y,T2PASF(M

2SC3669-Y,T2PASF(M

TRANS NPN 80V 2A MSTM

Toshiba Semiconductor and Storage

7,876 -
RFQ
2SC3669-Y,T2PASF(M

Datenblatt

- SC-71 Bulk Obsolete NPN 2 A 80 V 500mV @ 50mA, 1A 1µA (ICBO) 70 @ 500mA, 2V 1 W 100MHz 150°C (TJ) - - Through Hole MSTM
2SC3672-O(T2ASH,FM

2SC3672-O(T2ASH,FM

TRANS NPN 300V 0.1A MSTM

Toshiba Semiconductor and Storage

4,716 -
RFQ
2SC3672-O(T2ASH,FM

Datenblatt

- SC-71 Bulk Obsolete NPN 100 mA 300 V 500mV @ 2mA, 20mA 100nA (ICBO) 30 @ 20mA, 10V 1 W 80MHz 150°C (TJ) - - Through Hole MSTM
2SC4604,F(J

2SC4604,F(J

TRANS NPN 50V 3A TO-92MOD

Toshiba Semiconductor and Storage

5,955 -
RFQ
2SC4604,F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC4604,T6F(J

2SC4604,T6F(J

TRANS NPN 50V 3A TO-92MOD

Toshiba Semiconductor and Storage

5,625 -
RFQ
2SC4604,T6F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC4604,T6F(M

2SC4604,T6F(M

TRANS NPN 50V 3A TO-92MOD

Toshiba Semiconductor and Storage

8,262 -
RFQ
2SC4604,T6F(M

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 3 A 50 V 500mV @ 75mA, 1.5A 100nA (ICBO) 120 @ 100mA, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC4682,T6CSF(J

2SC4682,T6CSF(J

TRANS NPN 15V 3A TO-92MOD

Toshiba Semiconductor and Storage

6,434 -
RFQ
2SC4682,T6CSF(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 3 A 15 V 500mV @ 30mA, 3A 1µA (ICBO) 800 @ 500mA, 1V 900 mW 150MHz 150°C (TJ) - - Through Hole TO-92MOD
2SC4793(LBSAN,F,M)

2SC4793(LBSAN,F,M)

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

5,385 -
RFQ
2SC4793(LBSAN,F,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793(PAIO,F,M)

2SC4793(PAIO,F,M)

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

5,625 -
RFQ
2SC4793(PAIO,F,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793,F(J

2SC4793,F(J

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

9,970 -
RFQ
2SC4793,F(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793,HFEF(J

2SC4793,HFEF(J

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

6,974 -
RFQ
2SC4793,HFEF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793,HFEF(M

2SC4793,HFEF(M

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

2,963 -
RFQ
2SC4793,HFEF(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793,NSEIKIF(J

2SC4793,NSEIKIF(J

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

7,891 -
RFQ
2SC4793,NSEIKIF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793,TOA1F(J

2SC4793,TOA1F(J

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

4,568 -
RFQ
2SC4793,TOA1F(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793,WNLF(J

2SC4793,WNLF(J

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

5,167 -
RFQ
2SC4793,WNLF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793,YHF(J

2SC4793,YHF(J

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

2,132 -
RFQ
2SC4793,YHF(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4793,YHF(M

2SC4793,YHF(M

TRANS NPN 230V 1A TO-220NIS

Toshiba Semiconductor and Storage

9,160 -
RFQ
2SC4793,YHF(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 1 A 230 V 1.5V @ 50mA, 500mA 1µA (ICBO) 100 @ 100mA, 5V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4881(CANO,F,M)

2SC4881(CANO,F,M)

TRANS NPN 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

5,403 -
RFQ
2SC4881(CANO,F,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 5 A 50 V 400mV @ 125mA, 2.5A 1µA (ICBO) 100 @ 1A, 1V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4881,LS1SUMIF(M

2SC4881,LS1SUMIF(M

TRANS NPN 50V 5A TO-220NIS

Toshiba Semiconductor and Storage

5,538 -
RFQ
2SC4881,LS1SUMIF(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 5 A 50 V 400mV @ 125mA, 2.5A 1µA (ICBO) 100 @ 1A, 1V 2 W 100MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC4935-Y,Q(J

2SC4935-Y,Q(J

TRANS NPN 50V 3A TO-220NIS

Toshiba Semiconductor and Storage

9,478 -
RFQ
2SC4935-Y,Q(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 3 A 50 V 600mV @ 200mA, 2A 1µA (ICBO) 70 @ 500mA, 2V 2 W 80MHz 150°C (TJ) - - Through Hole TO-220NIS
Total 19289 Record«Prev1... 892893894895896897898899...965Next»
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