Einzelne Bipolartransistoren

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Einzelne Bipolartransistoren

TomatoElec liefert einzelne Bipolartransistoren für Industrie, Automotive, Kommunikation, Steuerung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete einzelne BJT-Transistorprodukte für Verstärkungs-, Schalt- und Signalsteuerungsschaltungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung einzelner Bipolartransistoren und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Transistoren, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Leistung – Max Frequenz - Übergang Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SC5171,ONKQ(J

2SC5171,ONKQ(J

TRANS NPN 180V 2A TO-220NIS

Toshiba Semiconductor and Storage

4,417 -
RFQ
2SC5171,ONKQ(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC5171,Q(J

2SC5171,Q(J

TRANS NPN 180V 2A TO-220NIS

Toshiba Semiconductor and Storage

7,211 -
RFQ
2SC5171,Q(J

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 2 A 180 V 1V @ 100mA, 1A 5µA (ICBO) 100 @ 100mA, 5V 2 W 200MHz 150°C (TJ) - - Through Hole TO-220NIS
2SC5172(YAZK,Q,M)

2SC5172(YAZK,Q,M)

TRANS NPN 400V 5A TO-220NIS

Toshiba Semiconductor and Storage

4,805 -
RFQ
2SC5172(YAZK,Q,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 5 A 400 V 1V @ 250mA, 2A 20µA (ICBO) 20 @ 500mA, 5V 2 W - 150°C (TJ) - - Through Hole TO-220NIS
2SC5201(T6MURATAFM

2SC5201(T6MURATAFM

TRANS NPN 600V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

8,393 -
RFQ
2SC5201(T6MURATAFM

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) - - Through Hole TO-92MOD
2SC5201(TE6,F,M)

2SC5201(TE6,F,M)

TRANS NPN 600V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

9,551 -
RFQ
2SC5201(TE6,F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) - - Through Hole TO-92MOD
2SC5201,F(J

2SC5201,F(J

TRANS NPN 600V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

4,576 -
RFQ
2SC5201,F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) - - Through Hole TO-92MOD
2SC5201,T6F(J

2SC5201,T6F(J

TRANS NPN 600V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

8,226 -
RFQ
2SC5201,T6F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) - - Through Hole TO-92MOD
2SC5201,T6MURAF(J

2SC5201,T6MURAF(J

TRANS NPN 600V 0.05A TO-92MOD

Toshiba Semiconductor and Storage

9,402 -
RFQ
2SC5201,T6MURAF(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 50 mA 600 V 1V @ 500mA, 20mA 1µA (ICBO) 100 @ 20mA, 5V 900 mW - 150°C (TJ) - - Through Hole TO-92MOD
2SC5459(TOJS,Q,M)

2SC5459(TOJS,Q,M)

TRANS NPN 400V 3A TO-220NIS

Toshiba Semiconductor and Storage

4,333 -
RFQ
2SC5459(TOJS,Q,M)

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 3 A 400 V 1V @ 150mA, 1.2A 100µA (ICBO) 20 @ 300mA, 5V 2 W - 150°C (TJ) - - Through Hole TO-220NIS
2SC5549,T6F(J

2SC5549,T6F(J

TRANS NPN 400V 1A TO-92MOD

Toshiba Semiconductor and Storage

7,458 -
RFQ
2SC5549,T6F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 1 A 400 V 1V @ 25mA, 200mA 100µA (ICBO) 20 @ 40mA, 5V 900 mW - 150°C (TJ) - - Through Hole TO-92MOD
2SC6010(T2MITUM,FM

2SC6010(T2MITUM,FM

TRANS NPN 600V 1A MSTM

Toshiba Semiconductor and Storage

6,294 -
RFQ
2SC6010(T2MITUM,FM

Datenblatt

- SC-71 Bulk Obsolete NPN 1 A 600 V 1V @ 75mA, 600mA 100µA (ICBO) 100 @ 100mA, 5V 1 W - 150°C (TJ) - - Through Hole MSTM
2SC6040(TPF2,Q,M)

2SC6040(TPF2,Q,M)

TRANS NPN 800V 1A MSTM

Toshiba Semiconductor and Storage

7,096 -
RFQ
2SC6040(TPF2,Q,M)

Datenblatt

- SC-71 Bulk Obsolete NPN 1 A 800 V 1V @ 100mA, 800mA 100µA (ICBO) 60 @ 100mA, 5V 1 W - 150°C (TJ) - - Through Hole MSTM
2SC6040,T2Q(J

2SC6040,T2Q(J

TRANS NPN 800V 1A MSTM

Toshiba Semiconductor and Storage

6,598 -
RFQ
2SC6040,T2Q(J

Datenblatt

- SC-71 Bulk Obsolete NPN 1 A 800 V 1V @ 100mA, 800mA 100µA (ICBO) 60 @ 100mA, 5V 1 W - 150°C (TJ) - - Through Hole MSTM
2SC6042,T2HOSH1Q(J

2SC6042,T2HOSH1Q(J

TRANS NPN 375V 1A MSTM

Toshiba Semiconductor and Storage

9,701 -
RFQ
2SC6042,T2HOSH1Q(J

Datenblatt

- SC-71 Bulk Obsolete NPN 1 A 375 V 1V @ 100mA, 800mA 100µA (ICBO) 100 @ 100mA, 5V 1 W - 150°C (TJ) - - Through Hole MSTM
2SC6139,T2F(M

2SC6139,T2F(M

TRANS NPN 160V 1.5A MSTM

Toshiba Semiconductor and Storage

2,711 -
RFQ
2SC6139,T2F(M

Datenblatt

- SC-71 Bulk Obsolete NPN 1.5 A 160 V 500mV @ 50mA, 500mA 100nA (ICBO) 140 @ 100mA, 5V 1 W 100MHz 150°C (TJ) - - Through Hole MSTM
2SD2129,ALPSQ(M

2SD2129,ALPSQ(M

TRANS NPN 100V 3A TO-220NIS

Toshiba Semiconductor and Storage

6,454 -
RFQ
2SD2129,ALPSQ(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 3 A 100 V 2V @ 12mA, 3A 100µA (ICBO) 2000 @ 1.5A, 3V 2 W - 150°C (TJ) - - Through Hole TO-220NIS
2SD2129,LS4ALPSQ(M

2SD2129,LS4ALPSQ(M

TRANS NPN 100V 3A TO-220NIS

Toshiba Semiconductor and Storage

6,136 -
RFQ
2SD2129,LS4ALPSQ(M

Datenblatt

- TO-220-3 Full Pack Bulk Obsolete NPN 3 A 100 V 2V @ 12mA, 3A 100µA (ICBO) 2000 @ 1.5A, 3V 2 W - 150°C (TJ) - - Through Hole TO-220NIS
2SD2206(T6CANO,F,M

2SD2206(T6CANO,F,M

TRANS NPN 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

9,318 -
RFQ
2SD2206(T6CANO,F,M

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SD2206(TE6,F,M)

2SD2206(TE6,F,M)

TRANS NPN 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

2,183 -
RFQ
2SD2206(TE6,F,M)

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
2SD2206,T6F(J

2SD2206,T6F(J

TRANS NPN 100V 2A TO-92MOD

Toshiba Semiconductor and Storage

4,964 -
RFQ
2SD2206,T6F(J

Datenblatt

- TO-226-3, TO-92-3 Long Body Bulk Obsolete NPN 2 A 100 V 1.5V @ 1mA, 1A 10µA (ICBO) 2000 @ 1A, 2V 900 mW 100MHz 150°C (TJ) - - Through Hole TO-92MOD
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