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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SQ2319CES-T1_GE3

    SQ2319CES-T1_GE3

    MOSFET P-CH 40V 4.6A SOT23-3

    Vishay Siliconix

    		 7,670 -
    RFQ
    		SQ2319CES-T1_GE3

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Tc) 4.5V, 10V 75mOhm @ 3A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 620 pF @ 20 V - 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
    SSM3J35FS,LF

    SSM3J35FS,LF

    SMALL LOW RON PCH MOSFETS VDSS:-

    Toshiba Semiconductor and Storage

    		 3,833 -
    RFQ
    		SSM3J35FS,LF

    Datenblatt

         		- SC-75, SOT-416 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 100mA (Ta) 1.2V, 4V 8Ohm @ 50mA, 4V 1V @ 1mA - ±10V 12.2 pF @ 3 V - 100mW (Ta) 150°C - - Surface Mount SSM
    SSM3K121TU,LF

    SSM3K121TU,LF

    MOSFET N-CH 20V 3.2A ES6

    Toshiba Semiconductor and Storage

    		 2,154 -
    RFQ
    		SSM3K121TU,LF

    Datenblatt

         		- 3-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 1.5V, 4V 48mOhm @ 2A, 4V 1V @ 1mA 5.9 nC @ 4 V ±10V 400 pF @ 10 V - 500mW (Ta) 150°C - - Surface Mount UFM
    SQ2337CES-T1_GE3

    SQ2337CES-T1_GE3

    MOSFET P-CH 80V 2.2A SOT23-3

    Vishay Siliconix

    		 5,274 -
    RFQ
    		SQ2337CES-T1_GE3

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 2.2A (Tc) 6V, 10V 290mOhm @ 1.2A, 10V 2.5V @ 250µA 18 nC @ 40 V ±20V 620 pF @ 40 V - 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
    SQJ166ELP-T1_GE3

    SQJ166ELP-T1_GE3

    MOSFET N-CH 50V 50A TO252AA

    Vishay Siliconix

    		 9,906 -
    RFQ
    		SQJ166ELP-T1_GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 67A (Tc) 4.5V, 10V 9.7mOhm @ 20A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1903 pF @ 25 V - 89W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
    SQS124ELNW-T1_GE3

    SQS124ELNW-T1_GE3

    MOSFET N-CH 30V 100A TO252AA

    Vishay Siliconix

    		 7,710 -
    RFQ
    		SQS124ELNW-T1_GE3

    Datenblatt

         		TrenchFET® Gen IV 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 107A (Tc) 4.5V, 10V 3mOhm @ 10A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V 2945 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
    SIS5712DN-T1-GE3

    SIS5712DN-T1-GE3

    MOSFET N-CH 150V 2.2A PPAK1212-8

    Vishay Siliconix

    		 6,831 -
    RFQ
    		SIS5712DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 5.6A (Ta), 18A (Tc) 7.5V, 10V 55.5mOhm @ 5.6A, 10V 4V @ 250µA 11.3 nC @ 10 V ±20V 500 pF @ 75 V - 3.7W (Ta), 39.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
    ISK018NE1LM7ATSA1

    ISK018NE1LM7ATSA1

    ISK018NE1LM7AULA1 MOSFET

    Infineon Technologies

    		 9,028 -
    RFQ
    		ISK018NE1LM7ATSA1

    Datenblatt

         		OptiMOS™ 7 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 30A (Ta), 129A (Tc) 4.5V, 7V 1.8mOhm @ 20A, 7V 2V @ 106µA 13.6 nC @ 7 V ±7V 1600 pF @ 7.5 V - 2.1W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-VSON-6-1
    ISK057N04LM6ATSA1

    ISK057N04LM6ATSA1

    MOSFET N-CH 40V 64A 6VSON

    Infineon Technologies

    		 6,645 -
    RFQ
    		ISK057N04LM6ATSA1

    Datenblatt

         		OptiMOS™ 6 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 64A (Tc) 4.5V, 10V 5.75mOhm @ 20A, 10V 2.3V @ 250µA 12 nC @ 10 V ±20V 870 pF @ 20 V - 2.1W (Ta), 39.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-VSON-6-1
    BSB044N08NN3GXUMA2

    BSB044N08NN3GXUMA2

    MOSFET N-CH 80V 18A/90A 2WDSON

    Infineon Technologies

    		 4,142 -
    RFQ

    -

    		 OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Ta), 90A (Tc) 10V 4.4mOhm @ 30A, 10V 3.5V @ 97µA 73 nC @ 10 V ±20V 5700 pF @ 40 V - 2.2W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
    BSF450NE7NH3XUMA2

    BSF450NE7NH3XUMA2

    MOSFET N-CH 75V 5A/15A 2WDSON

    Infineon Technologies

    		 6,776 -
    RFQ

    -

    		 OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 5A (Ta), 15A (Tc) 7V, 10V 45mOhm @ 8A, 10V 3.8V @ 8µA 6 nC @ 10 V ±20V 390 pF @ 37.5 V - 2.2W (Ta), 18W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
    BSF134N10NJ3GXUMA2

    BSF134N10NJ3GXUMA2

    MOSFET N-CH 100V 9A/40A 2WDSON

    Infineon Technologies

    		 3,453 -
    RFQ

    -

    		 OptiMOS™ DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 40A (Tc) 6V, 10V 13.4mOhm @ 30A, 10V 3.5V @ 40µA 30 nC @ 10 V ±20V 2300 pF @ 50 V - 2.2W (Ta), 43W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-2
    APT80GA90B2D40

    APT80GA90B2D40

    MOSFET N-CH 800V 34A T-MAX

    Microchip Technology

    		 2,937 -
    RFQ

    -

    		 - - Tube Active - - - - - - - - - - - - - - - - -
    SIR5812DP-T1-RE3

    SIR5812DP-T1-RE3

    MOSFET N-CH 80V 30A PPAK SO-8

    Vishay Siliconix

    		 2,326 -
    RFQ

    -

    		 TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 13A (Ta), 45.3A (Tc) 7.5V, 10V 13.5mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 775 pF @ 40 V - 4.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    MSC035SMA070SCT/R

    MSC035SMA070SCT/R

    MOSFET SIC 700 V 35 MOHM PSMT

    Microchip Technology

    		 8,820 -
    RFQ
    		MSC035SMA070SCT/R

    Datenblatt

         		mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 71A (Tc) 18V, 20V 44mOhm @ 30A, 20V 5V @ 2mA 93 nC @ 20 V +23V, -10V 1806 pF @ 700 V - 276W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
    MSC020SMB120D/S

    MSC020SMB120D/S

    MOSFET SIC 1200 V 20 MOHM DIE

    Microchip Technology

    		 3,121 -
    RFQ

    -

    		 - - Tube Active - - - - - - - - - - - - - - - - -
    MSC045SMB120D/S

    MSC045SMB120D/S

    MOSFET SIC 1200 V 45 MOHM DIE

    Microchip Technology

    		 3,148 -
    RFQ

    -

    		 - - Bulk Active - - - - - - - - - - - - - - - - -
    MSC025SMA330B4N

    MSC025SMA330B4N

    MOSFET SIC 3300V 25 MOHM TO-247-

    Microchip Technology

    		 4,377 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 3300 V 104A - - - - - - - - -55°C ~ 150°C (TJ) - - Through Hole TO-247-4
    MSC025SMA120SCT/R

    MSC025SMA120SCT/R

    MOSFET SIC 1200 V 25 MOHM PSMT

    Microchip Technology

    		 2,441 -
    RFQ
    		MSC025SMA120SCT/R

    Datenblatt

         		mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 108A (Tc) 18V, 20V 31mOhm @ 40A, 20V 3V @ 3mA 232 nC @ 20 V +23V, -10V 3633 pF @ 1000 V - 524W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
    MSC030SMB120D/S

    MSC030SMB120D/S

    MOSFET SIC 1200 V 30 MOHM DIE

    Microchip Technology

    		 5,073 -
    RFQ

    -

    		 - - Bulk Active - - - - - - - - - - - - - - - - -
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