TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche BAS116-7-F AP7345D-1833RH4-7 FCX493TA SDM02U30CSP-7 LM5164DDAR AP22653W6-7 ZXSC410E6TA D8V0L1B2LP-7B AS431ANTR-G1 GRM1555C1H102JA01D
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    DMS3014SFG-13

    DMS3014SFG-13

    MOSFET N-CH POWERDI3333-8

    Diodes Incorporated

    		 4,785 -
    RFQ
    		DMS3014SFG-13

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta) 4.5V, 10V 13mOhm @ 10.4A, 10V 2.2V @ 250µA 45.7 nC @ 10 V ±12V 4310 pF @ 15 V Schottky Diode (Body) 1W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount POWERDI3333-8
    NVD5807NT4G-VF01

    NVD5807NT4G-VF01

    MOSFET N-CH 40V 23A DPAK

    onsemi

    		 6,786 -
    RFQ
    		NVD5807NT4G-VF01

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 23A (Tc) 4.5V, 10V 31mOhm @ 5A, 10V 2.5V @ 250µA 20 nC @ 10 V ±20V 603 pF @ 25 V - 33W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    NVD6416ANLT4G

    NVD6416ANLT4G

    MOSFET N-CH 100V 19A DPAK

    onsemi

    		 9,575 -
    RFQ
    		NVD6416ANLT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 4.5V, 10V 74mOhm @ 19A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
    NVD6495NLT4G

    NVD6495NLT4G

    MOSFET N-CH 100V 25A DPAK

    onsemi

    		 9,516 -
    RFQ
    		NVD6495NLT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 4.5V, 10V 50mOhm @ 10A, 10V 2V @ 250µA 35 nC @ 10 V ±20V 1024 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    NTNS5K0P021ZTCG

    NTNS5K0P021ZTCG

    MOSFET P-CH 20V 127MA 3XDFN

    onsemi

    		 8,856 -
    RFQ
    		NTNS5K0P021ZTCG

    Datenblatt

         		- 3-XFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 127mA (Ta) 1.5V, 4.5V 5Ohm @ 100mA, 4.5V 1V @ 250µA - ±8V 12.8 pF @ 15 V - 125mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-XDFN (0.42x0.62)
    TSM2311CX-01 RFG

    TSM2311CX-01 RFG

    MOSFET P-CH 20V 4A SOT23

    Taiwan Semiconductor Corporation

    		 5,732 -
    RFQ

    -

    		 - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 55mOhm @ 4A, 4.5V 1.4V @ 250µA 9 nC @ 4.5 V ±8V 640 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    TSM10N60CZ C0G

    TSM10N60CZ C0G

    MOSFET N-CH 600V 10A TO220

    Taiwan Semiconductor Corporation

    		 8,092 -
    RFQ
    		TSM10N60CZ C0G

    Datenblatt

         		- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 45.8 nC @ 10 V ±30V 1738 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    TSM22P10CI C0G

    TSM22P10CI C0G

    MOSFET P-CH 100V 22A ITO220

    Taiwan Semiconductor Corporation

    		 5,265 -
    RFQ
    		TSM22P10CI C0G

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2250 pF @ 30 V - 48W (Tc) 150°C (TJ) - - Through Hole ITO-220
    TSM22P10CZ C0G

    TSM22P10CZ C0G

    MOSFET P-CH 100V 22A TO220

    Taiwan Semiconductor Corporation

    		 8,050 -
    RFQ
    		TSM22P10CZ C0G

    Datenblatt

         		- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 4.5V, 10V 140mOhm @ 20A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2250 pF @ 30 V - 125W (Tc) 150°C (TJ) - - Through Hole TO-220
    TSM230N06CI C0G

    TSM230N06CI C0G

    MOSFET N-CH 60V 50A ITO220

    Taiwan Semiconductor Corporation

    		 6,455 -
    RFQ
    		TSM230N06CI C0G

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1680 pF @ 25 V - 42W (Tc) 150°C (TJ) - - Through Hole ITO-220
    TSM480P06CI C0G

    TSM480P06CI C0G

    MOSFET P-CH 60V 20A ITO220

    Taiwan Semiconductor Corporation

    		 6,126 -
    RFQ
    		TSM480P06CI C0G

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 27W (Tc) -50°C ~ 150°C (TJ) - - Through Hole ITO-220
    TSM480P06CZ C0G

    TSM480P06CZ C0G

    MOSFET P-CH 60V 20A TO220

    Taiwan Semiconductor Corporation

    		 9,265 -
    RFQ
    		TSM480P06CZ C0G

    Datenblatt

         		- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 48mOhm @ 8A, 10V 2.2V @ 250µA 22.4 nC @ 10 V ±20V 1250 pF @ 30 V - 66W (Tc) -50°C ~ 150°C (TJ) - - Through Hole TO-220
    TSM680P06CI C0G

    TSM680P06CI C0G

    MOSFET P-CH 60V 18A ITO220

    Taiwan Semiconductor Corporation

    		 9,949 -
    RFQ
    		TSM680P06CI C0G

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V 2.2V @ 250µA 16.4 nC @ 10 V ±20V 870 pF @ 30 V - 17W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    TSM680P06CZ C0G

    TSM680P06CZ C0G

    MOSFET P-CH 60V 18A TO220

    Taiwan Semiconductor Corporation

    		 3,949 -
    RFQ
    		TSM680P06CZ C0G

    Datenblatt

         		- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V 2.2V @ 250µA 16.4 nC @ 10 V ±20V 870 pF @ 30 V - 42W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    2N7000-AP

    2N7000-AP

    MOSFET N-CH 60V 200MA TO92

    Micro Commercial Co

    		 3,899 -
    RFQ
    		2N7000-AP

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 220mA (Ta) 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 60 pF @ 25 V - 625mW (Ta) -55°C ~ 150°C - - Through Hole TO-92
    MCMP06-TP

    MCMP06-TP

    MOSFET P-CH 2A DFN2020-6U

    Micro Commercial Co

    		 5,647 -
    RFQ

    -

    		 - 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel - - 2A (Ta) - 110mOhm @ 2.8A, 4.5V 1V @ 250µA - - - Schottky Diode (Isolated) - 150°C (TJ) - - Surface Mount DFN2020-6U
    IPD25DP06LMSAUMA1

    IPD25DP06LMSAUMA1

    MOSFET P-CH 60V 6.5A TO252-3

    Infineon Technologies

    		 6,538 -
    RFQ
    		IPD25DP06LMSAUMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 6.5A (Tc) 4.5V, 10V 250mOhm @ 6.5A, 10V 2V @ 270µA 13.8 nC @ 10 V ±20V 420 pF @ 30 V - 28W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-313
    NTTFS003N04CTAG

    NTTFS003N04CTAG

    MOSFET N-CH 40V 22A/103A 8WDFN

    onsemi

    		 5,753 -
    RFQ
    		NTTFS003N04CTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 103A (Tc) 10V 3.5mOhm @ 50A, 10V 3.5V @ 60µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.2W (Ta), 69W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
    NVD4810NT4G-VF01

    NVD4810NT4G-VF01

    MOSFET N-CH 30V 9A/54A DPAK

    onsemi

    		 7,148 -
    RFQ

    -

    		 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V 2.5V @ 250µA 21 nC @ 11.5 V ±20V 1350 pF @ 12 V - 1.4W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
    CP398X-CPDM303NH-CT

    CP398X-CPDM303NH-CT

    MOSFET N-CH 30V 3.6A DIE

    Central Semiconductor Corp

    		 8,484 -
    RFQ
    		CP398X-CPDM303NH-CT

    Datenblatt

         		- Die Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 2.5V, 4.5V 78mOhm @ 1.8A, 2.5V 1.2V @ 250µA 13 nC @ 4.5 V 12V 590 pF @ 10 V - - -55°C ~ 150°C (TJ) - - Surface Mount Die
    Total 36322 Record«Prev1... 17601761176217631764176517661767...1817Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135