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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AON6414AL

    AON6414AL

    MOSFET N-CH 30V 13A/30A 8DFN

    Alpha & Omega Semiconductor Inc.

    		 3,752 -
    RFQ
    		AON6414AL

    Datenblatt

         		- 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 30A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.5V @ 250µA 24 nC @ 10 V ±20V 1380 pF @ 15 V - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    AON6562

    AON6562

    MOSFET N-CH 30V 29A/32A 8DFN

    Alpha & Omega Semiconductor Inc.

    		 9,182 -
    RFQ

    -

    		 AlphaMOS 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta), 32A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2.4V @ 250µA 33 nC @ 10 V ±20V 1550 pF @ 15 V - 6W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    AON7400AL

    AON7400AL

    MOSFET N-CH 30V 15A/40A 8DFN

    Alpha & Omega Semiconductor Inc.

    		 8,656 -
    RFQ
    		AON7400AL

    Datenblatt

         		- 8-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 40A (Tc) 4.5V, 10V 7.5mOhm @ 20A, 10V 2.5V @ 250µA 24 nC @ 10 V ±20V 1380 pF @ 15 V - 3.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3x3)
    MT8386M5

    MT8386M5

    MOSFET N-CH 30V

    Alpha & Omega Semiconductor Inc.

    		 5,733 -
    RFQ

    -

    		 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
    TPH3208LSG

    TPH3208LSG

    GANFET N-CH 650V 20A 3PQFN

    Transphorm

    		 8,696 -
    RFQ
    		TPH3208LSG

    Datenblatt

         		- 3-PowerDFN Tube Obsolete N-Channel GaNFET (Gallium Nitride) 650 V 20A (Tc) 10V 130mOhm @ 14A, 8V 2.6V @ 300µA 42 nC @ 8 V ±18V 760 pF @ 400 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 3-PQFN (8x8)
    TP90H180PS

    TP90H180PS

    GANFET N-CH 900V 15A TO220AB

    Transphorm

    		 8,284 -
    RFQ
    		TP90H180PS

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel GaNFET (Cascode Gallium Nitride FET) 900 V 15A (Tc) 10V 205mOhm @ 10A, 10V 2.6V @ 500µA 10 nC @ 8 V ±18V 780 pF @ 600 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SPD50P03LGXT

    SPD50P03LGXT

    MOSFET P-CH 30V 50A TO252-5

    Infineon Technologies

    		 5,333 -
    RFQ

    -

    		 OptiMOS™ P TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7mOhm @ 50A, 10V 2V @ 250µA 126 nC @ 10 V ±20V 6880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-5
    IPI045N10N3GXK

    IPI045N10N3GXK

    MOSFET N-CH 100V 137A TO262-3

    Infineon Technologies

    		 7,812 -
    RFQ

    -

    		 OptiMOS™ 3 TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 137A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    IPP023NE7N3G

    IPP023NE7N3G

    MOSFET N-CH 75V 120A TO220-3

    Infineon Technologies

    		 5,063 -
    RFQ
    		IPP023NE7N3G

    Datenblatt

         		OptiMOS™ 3 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V ±20V 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    SPP04N80C3XK

    SPP04N80C3XK

    MOSFET N-CH 800V 4A TO220-3

    Infineon Technologies

    		 7,878 -
    RFQ

    -

    		 CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2.5A, 10V 3.9V @ 240µA 31 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    SPP06N80C3XK

    SPP06N80C3XK

    MOSFET N-CH 800V 6A TO220-3

    Infineon Technologies

    		 6,201 -
    RFQ

    -

    		 CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    SPP08N80C3XK

    SPP08N80C3XK

    MOSFET N-CH 800V 8A TO220-3

    Infineon Technologies

    		 5,373 -
    RFQ

    -

    		 CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 650mOhm @ 5.1A, 10V 3.9V @ 470µA 60 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPW65R045C7300XKSA1

    IPW65R045C7300XKSA1

    MOSFET N-CH 650V 46A TO247

    Infineon Technologies

    		 6,262 -
    RFQ

    -

    		 CoolMOS™ C7 TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    PH1530CL,115

    PH1530CL,115

    MOSFET N-CH 30V LFPAK

    Nexperia USA Inc.

    		 5,191 -
    RFQ

    -

    		 * - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
    PMV48XP/MIR

    PMV48XP/MIR

    MOSFET P-CH 20V 3.5A TO236AB

    Nexperia USA Inc.

    		 5,172 -
    RFQ
    		PMV48XP/MIR

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 55mOhm @ 2.4A, 4.5V 1.25V @ 250µA 11 nC @ 4.5 V ±12V 1000 pF @ 10 V - 510mW (Ta), 4.15W (Tc) 150°C (TJ) - - Surface Mount TO-236AB
    PMV65XP/MIR

    PMV65XP/MIR

    MOSFET P-CH 20V 2.8A TO236AB

    Nexperia USA Inc.

    		 8,286 -
    RFQ
    		PMV65XP/MIR

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 1.8V, 4.5V 74mOhm @ 2.8A, 4.5V 900mV @ 250µA 7.7 nC @ 4.5 V ±12V 744 pF @ 20 V - 480mW (Ta), 4.17W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-236AB
    STFU9N65M2

    STFU9N65M2

    MOSFET N-CH 650V 5A TO220FP

    STMicroelectronics

    		 7,913 -
    RFQ
    		STFU9N65M2

    Datenblatt

         		MDmesh™ M2 TO-220-3 Full Pack Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 900mOhm @ 2.5A, 10V 4V @ 250µA 10 nC @ 10 V ±25V 315 pF @ 100 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    HAT2198RWS-E

    HAT2198RWS-E

    IC MCU 16BIT

    Renesas Electronics Corporation

    		 4,710 -
    RFQ

    -

    		 * - Bulk Obsolete - - - - - - - - - - - - - - - - -
    RJK0353DPA-WS#J0B

    RJK0353DPA-WS#J0B

    MOSFET N-CH 30V 35A WPAK

    Renesas Electronics Corporation

    		 5,811 -
    RFQ

    -

    		 - 8-PowerVDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta) 4.5V, 10V 5.2mOhm @ 17.5A, 10V 2.5V @ 1mA 14 nC @ 10 V ±20V 2180 pF @ 10 V - 40W (Ta) 150°C - - Surface Mount WPAK(3F) (5x6)
    UPD703014BGC-A33-8EU-A

    UPD703014BGC-A33-8EU-A

    MOSFET N-CH

    Renesas Electronics Corporation

    		 4,927 -
    RFQ

    -

    		 * - Bulk Obsolete - - - - - - - - - - - - - - - - -
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