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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRF6721STR1PBF

    IRF6721STR1PBF

    MOSFET N-CH 30V 14A DIRECTFET

    Infineon Technologies

    		 7,867 -
    RFQ
    		IRF6721STR1PBF

    Datenblatt

         		HEXFET® DirectFET™ Isometric SQ Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 60A (Tc) 4.5V, 10V 7.3mOhm @ 14A, 10V 2.4V @ 25µA 17 nC @ 4.5 V ±20V 1430 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DIRECTFET™ SQ
    IRFS3806PBF

    IRFS3806PBF

    MOSFET N-CH 60V 43A D2PAK

    Infineon Technologies

    		 6,840 -
    RFQ
    		IRFS3806PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF1018ESPBF

    IRF1018ESPBF

    MOSFET N-CH 60V 79A D2PAK

    Infineon Technologies

    		 8,599 -
    RFQ
    		IRF1018ESPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFR3607PBF

    IRFR3607PBF

    MOSFET N-CH 75V 56A DPAK

    Infineon Technologies

    		 4,475 -
    RFQ
    		IRFR3607PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRFB4233PBF

    IRFB4233PBF

    MOSFET N-CH 230V 56A TO220AB

    Infineon Technologies

    		 2,578 -
    RFQ
    		IRFB4233PBF

    Datenblatt

         		HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 230 V 56A (Tc) 10V 37mOhm @ 28A, 10V 5V @ 250µA 170 nC @ 10 V ±30V 5510 pF @ 25 V - 370W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-220AB
    IRL1404ZSPBF

    IRL1404ZSPBF

    MOSFET N-CH 40V 75A D2PAK

    Infineon Technologies

    		 5,464 -
    RFQ
    		IRL1404ZSPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRLR3114ZPBF

    IRLR3114ZPBF

    MOSFET N-CH 40V 42A DPAK

    Infineon Technologies

    		 9,589 -
    RFQ
    		IRLR3114ZPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRF5305LPBF

    IRF5305LPBF

    MOSFET P-CH 55V 31A TO262

    Infineon Technologies

    		 5,553 -
    RFQ
    		IRF5305LPBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRL1404ZLPBF

    IRL1404ZLPBF

    MOSFET N-CH 40V 120A TO262

    Infineon Technologies

    		 4,998 -
    RFQ
    		IRL1404ZLPBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    64-6006PBF

    64-6006PBF

    MOSFET N-CH 300V 46A TO247AC

    Infineon Technologies

    		 6,330 -
    RFQ
    		64-6006PBF

    Datenblatt

         		HEXFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 46A (Tc) 10V 59mOhm @ 33A, 10V 5V @ 250µA 247 nC @ 10 V ±30V 7370 pF @ 25 V - 430W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247AC
    IRFS3207PBF

    IRFS3207PBF

    MOSFET N-CH 75V 170A D2PAK

    Infineon Technologies

    		 6,657 -
    RFQ
    		IRFS3207PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFS4310ZPBF

    IRFS4310ZPBF

    MOSFET N-CH 100V 120A D2PAK

    Infineon Technologies

    		 4,297 -
    RFQ
    		IRFS4310ZPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRF5210LPBF

    IRF5210LPBF

    MOSFET P-CH 100V 38A TO262

    Infineon Technologies

    		 7,512 -
    RFQ
    		IRF5210LPBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 38A (Tc) 10V 60mOhm @ 38A, 10V 4V @ 250µA 230 nC @ 10 V ±20V 2780 pF @ 25 V - 3.1W (Ta), 170W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
    IRF6215LPBF

    IRF6215LPBF

    MOSFET P-CH 150V 13A TO262

    Infineon Technologies

    		 6,672 -
    RFQ
    		IRF6215LPBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    AUXAKF1405ZS-7P

    AUXAKF1405ZS-7P

    MOSFET N-CH 55V 120A D2PAK

    Infineon Technologies

    		 8,822 -
    RFQ
    		AUXAKF1405ZS-7P

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    IRFSL38N20DPBF

    IRFSL38N20DPBF

    MOSFET N-CH 200V 43A TO262

    Infineon Technologies

    		 6,095 -
    RFQ
    		IRFSL38N20DPBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 43A (Tc) - 54mOhm @ 26A, 10V 5V @ 250µA 91 nC @ 10 V - 2900 pF @ 25 V - - - - - Through Hole TO-262
    IRFR3806PBF

    IRFR3806PBF

    MOSFET N-CH 60V 43A DPAK

    Infineon Technologies

    		 2,010 -
    RFQ
    		IRFR3806PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRFSL4310PBF

    IRFSL4310PBF

    MOSFET N-CH 100V 130A TO262

    Infineon Technologies

    		 5,765 -
    RFQ
    		IRFSL4310PBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRFR1018EPBF

    IRFR1018EPBF

    MOSFET N-CH 60V 56A DPAK

    Infineon Technologies

    		 4,795 -
    RFQ
    		IRFR1018EPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    IRFS4229PBF

    IRFS4229PBF

    MOSFET N-CH 250V 45A D2PAK

    Infineon Technologies

    		 4,680 -
    RFQ
    		IRFS4229PBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 250 V 45A (Tc) 10V 48mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount D2PAK
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