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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FDD6796

    FDD6796

    MOSFET N-CH 25V 20A/40A DPAK

    onsemi

    		 4,430 -
    RFQ
    		FDD6796

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 20A (Ta), 40A (Tc) 4.5V, 10V 5.7mOhm @ 20A, 10V 3V @ 250µA 41 nC @ 10 V ±20V 2315 pF @ 13 V - 3.7W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    FDD6780

    FDD6780

    MOSFET N-CH 25V 16.5A/30A DPAK

    onsemi

    		 2,486 -
    RFQ
    		FDD6780

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 16.5A (Ta), 30A (Tc) 4.5V, 10V 8.5mOhm @ 16.5A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 1590 pF @ 13 V - 3.7W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    TK15A60U(STA4,Q,M)

    TK15A60U(STA4,Q,M)

    MOSFET N-CH 600V 15A TO220SIS

    Toshiba Semiconductor and Storage

    		 5,141 -
    RFQ
    		TK15A60U(STA4,Q,M)

    Datenblatt

         		DTMOSII TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 5V @ 1mA 17 nC @ 10 V ±30V 950 pF @ 10 V - 40W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TK20A60U(Q,M)

    TK20A60U(Q,M)

    MOSFET N-CH 600V 20A TO220SIS

    Toshiba Semiconductor and Storage

    		 8,246 -
    RFQ
    		TK20A60U(Q,M)

    Datenblatt

         		DTMOSII TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 190mOhm @ 10A, 10V 5V @ 1mA 27 nC @ 10 V ±30V 1470 pF @ 10 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    TPC6109-H(TE85L,FM

    TPC6109-H(TE85L,FM

    MOSFET P-CH 30V 5A VS-6

    Toshiba Semiconductor and Storage

    		 7,807 -
    RFQ
    		TPC6109-H(TE85L,FM

    Datenblatt

         		U-MOSIII-H SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 59mOhm @ 2.5A, 10V 1.2V @ 200µA 12.3 nC @ 10 V ±20V 490 pF @ 10 V - 700mW (Ta) 150°C (TJ) - - Surface Mount VS-6 (2.9x2.8)
    IRF1018ESLPBF

    IRF1018ESLPBF

    MOSFET N-CH 60V 79A TO262

    Infineon Technologies

    		 4,297 -
    RFQ
    		IRF1018ESLPBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 79A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    64-2105PBF

    64-2105PBF

    MOSFET N-CH 40V 75A TO262

    Infineon Technologies

    		 4,064 -
    RFQ
    		64-2105PBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRFP4410ZPBF

    IRFP4410ZPBF

    MOSFET N-CH 100V 97A TO247AC

    Infineon Technologies

    		 5,431 -
    RFQ
    		IRFP4410ZPBF

    Datenblatt

         		HEXFET® TO-247-3 Bag Obsolete N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AC
    IRFS4410ZPBF

    IRFS4410ZPBF

    MOSFET N-CH 100V 97A D2PAK

    Infineon Technologies

    		 4,964 -
    RFQ
    		IRFS4410ZPBF

    Datenblatt

         		HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100 V 97A (Tc) 10V 9mOhm @ 58A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4820 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IRFSL3607PBF

    IRFSL3607PBF

    MOSFET N-CH 75V 80A TO262

    Infineon Technologies

    		 6,527 -
    RFQ
    		IRFSL3607PBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRFSL3806PBF

    IRFSL3806PBF

    MOSFET N-CH 60V 43A TO262

    Infineon Technologies

    		 7,745 -
    RFQ
    		IRFSL3806PBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRFSL4227PBF

    IRFSL4227PBF

    MOSFET N-CH 200V 62A TO262

    Infineon Technologies

    		 9,142 -
    RFQ
    		IRFSL4227PBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 62A (Tc) 10V 26mOhm @ 46A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4600 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-262
    IRFSL4310ZPBF

    IRFSL4310ZPBF

    MOSFET N-CH 100V 120A TO262

    Infineon Technologies

    		 4,474 -
    RFQ
    		IRFSL4310ZPBF

    Datenblatt

         		HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IRFU1018EPBF

    IRFU1018EPBF

    MOSFET N-CH 60V 56A IPAK

    Infineon Technologies

    		 8,948 -
    RFQ
    		IRFU1018EPBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 8.4mOhm @ 47A, 10V 4V @ 100µA 69 nC @ 10 V ±20V 2290 pF @ 50 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
    IRFU2307ZPBF

    IRFU2307ZPBF

    MOSFET N-CH 75V 42A IPAK

    Infineon Technologies

    		 5,317 -
    RFQ
    		IRFU2307ZPBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
    IRFU2607ZPBF

    IRFU2607ZPBF

    MOSFET N-CH 75V 42A IPAK

    Infineon Technologies

    		 5,740 -
    RFQ
    		IRFU2607ZPBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
    IRFU3806PBF

    IRFU3806PBF

    MOSFET N-CH 60V 43A IPAK

    Infineon Technologies

    		 2,752 -
    RFQ
    		IRFU3806PBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
    IRLU3114ZPBF

    IRLU3114ZPBF

    MOSFET N-CH 40V 42A I-PAK

    Infineon Technologies

    		 2,538 -
    RFQ
    		IRLU3114ZPBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    IRLU8721-701PBF

    IRLU8721-701PBF

    MOSFET N-CH 30V 65A I-PAK

    Infineon Technologies

    		 2,435 -
    RFQ
    		IRLU8721-701PBF

    Datenblatt

         		HEXFET® TO-252-4, DPAK (3 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 65A (Tc) 4.5V, 10V 8.4mOhm @ 25A, 10V 2.35V @ 25µA 13 nC @ 4.5 V ±20V 1030 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount I-PAK (LF701)
    2SK3064G0L

    2SK3064G0L

    MOSFET N-CH 30V 100MA SMINI3-F2

    Panasonic Electronic Components

    		 2,562 -
    RFQ
    		2SK3064G0L

    Datenblatt

         		- SC-85 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 5V 50Ohm @ 10mA, 5V 2V @ 1µA - ±20V - - 150mW (Ta) 150°C (TJ) - - Surface Mount SMini3-F2
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