FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
SIS903DN-T1-GE3

SIS903DN-T1-GE3

MOSFET 2P-CH 20V 6A PPAK 1212

Vishay Siliconix

10,801 -
RFQ
SIS903DN-T1-GE3

Datenblatt

TrenchFET® Gen III PowerPAK® 1212-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 6A (Tc) 20.1mOhm @ 5A, 4.5V 1V @ 250µA 42nC @ 10V 2565pF @ 10V 2.6W (Ta), 23W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8 Dual
SI5504BDC-T1-E3

SI5504BDC-T1-E3

MOSFET N/P-CH 30V 4A/3.7A 1206-8

Vishay Siliconix

11,740 -
RFQ
SI5504BDC-T1-E3

Datenblatt

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4A, 3.7A 65mOhm @ 3.1A, 10V 3V @ 250µA 7nC @ 10V 220pF @ 15V 3.12W, 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
NTHD4102PT1G

NTHD4102PT1G

MOSFET 2P-CH 20V 2.9A CHIPFET

onsemi

41,871 -
RFQ
NTHD4102PT1G

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 2.9A 80mOhm @ 2.9A, 4.5V 1.5V @ 250µA 8.6nC @ 4.5V 750pF @ 16V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
FDMA1032CZ

FDMA1032CZ

MOSFET N/P-CH 20V 3.7A 6MICROFET

onsemi

30,419 -
RFQ
FDMA1032CZ

Datenblatt

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 3.7A, 3.1A 68mOhm @ 3.7A, 4.5V 1.5V @ 250µA 6nC @ 4.5V 340pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
IRF7316TRPBF

IRF7316TRPBF

MOSFET 2P-CH 30V 4.9A 8SO

Infineon Technologies

30,848 -
RFQ
IRF7316TRPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.9A 58mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDS4935A

FDS4935A

MOSFET 2P-CH 30V 7A 8SOIC

onsemi

18,774 -
RFQ
FDS4935A

Datenblatt

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 7A 23mOhm @ 7A, 10V 3V @ 250µA 21nC @ 5V 1233pF @ 15V 900mW -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
SI4909DY-T1-GE3

SI4909DY-T1-GE3

MOSFET 2P-CH 40V 8A 8SOIC

Vishay Siliconix

15,674 -
RFQ
SI4909DY-T1-GE3

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 40V 8A 27mOhm @ 8A, 10V 2.5V @ 250µA 63nC @ 10V 2000pF @ 20V 3.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDME1034CZT

FDME1034CZT

MOSFET N/P-CH 20V 3.8A 6MICROFET

onsemi

1,861 -
RFQ
FDME1034CZT

Datenblatt

PowerTrench® 6-UFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 3.8A, 2.6A 66mOhm @ 3.4A, 4.5V 1V @ 250µA 4.2nC @ 4.5V 300pF @ 10V 600mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (1.6x1.6)
ZXMHC3F381N8TC

ZXMHC3F381N8TC

MOSFET 2N/2P-CH 30V 3.98A 8SO

Diodes Incorporated

95,914 -
RFQ
ZXMHC3F381N8TC

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) Logic Level Gate 30V 3.98A, 3.36A 33mOhm @ 5A, 10V 3V @ 250µA 9nC @ 10V 430pF @ 15V, 670pF @ 15V 870mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
ZXMHC6A07N8TC

ZXMHC6A07N8TC

MOSFET 2N/2P-CH 60V 1.39A 8SO

Diodes Incorporated

9,928 -
RFQ
ZXMHC6A07N8TC

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N and 2 P-Channel (Full Bridge) Logic Level Gate 60V 1.39A, 1.28A 250mOhm @ 1.8A, 10V 3V @ 250µA 3.2nC @ 10V 166pF @ 40V, 141pF @ 50V 870mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
SI9926CDY-T1-GE3

SI9926CDY-T1-GE3

MOSFET 2N-CH 20V 8A 8SOIC

Vishay Siliconix

22,277 -
RFQ
SI9926CDY-T1-GE3

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 8A 18mOhm @ 8.3A, 4.5V 1.5V @ 250µA 33nC @ 10V 1200pF @ 10V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
EFC3J018NUZTDG

EFC3J018NUZTDG

MOSFET 2N-CH 20V 23A 6WLCSP

onsemi

19,908 -
RFQ
EFC3J018NUZTDG

Datenblatt

- 6-XFBGA, WLCSP Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive 20V 23A (Ta) 4.7mOhm @ 5A, 4.5V 1.3V @ 1mA 75nC @ 4.5V - 2.5W (Ta) 150°C (TJ) - - Surface Mount 6-WLCSP (1.77x3.05)
IRF7341TRPBFXTMA1

IRF7341TRPBFXTMA1

MOSFET 2N-CH 55V 4.7A 8DSO-902

Infineon Technologies

11,540 -
RFQ
IRF7341TRPBFXTMA1

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 55V 4.7A (Tc) 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8-902
IPG16N10S4L61AATMA1

IPG16N10S4L61AATMA1

MOSFET 2N-CH 100V 16A 8TDSON

Infineon Technologies

18,011 -
RFQ
IPG16N10S4L61AATMA1

Datenblatt

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 16A 61mOhm @ 16A, 10V 2.1V @ 90µA 11nC @ 10V 845pF @ 25V 29W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
QH8KA4TCR

QH8KA4TCR

MOSFET 2N-CH 30V 9A TSMT8

Rohm Semiconductor

1,311 -
RFQ
QH8KA4TCR

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Active - 2 N-Channel (Dual) - 30V 9A 17mOhm @ 7A, 4.5V 1.5V @ 1mA 12nC @ 4.5V 1400pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount TSMT8
IRF7389TRPBF

IRF7389TRPBF

MOSFET N/P-CH 30V 8SO

Infineon Technologies

2,795 -
RFQ
IRF7389TRPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V - 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V 650pF @ 25V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IPG20N04S4L11ATMA1

IPG20N04S4L11ATMA1

MOSFET 2N-CH 40V 20A 8TDSON

Infineon Technologies

38,095 -
RFQ
IPG20N04S4L11ATMA1

Datenblatt

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 11.6mOhm @ 17A, 10V 2.2V @ 15µA 26nC @ 10V 1990pF @ 25V 41W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
TSM300NB06DCR RLG

TSM300NB06DCR RLG

MOSFET 2N-CH 60V 6A 8PDFN

Taiwan Semiconductor Corporation

5,000 -
RFQ
TSM300NB06DCR RLG

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 6A (Ta), 25A (Tc) 30mOhm @ 6A, 10V 4.5V @ 250µA 17nC @ 10V 1079pF @ 30V 2W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
IRF7341TRPBF

IRF7341TRPBF

MOSFET 2N-CH 55V 4.7A 8SO

Infineon Technologies

15,612 -
RFQ
IRF7341TRPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 4.7A 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7907TRPBF

IRF7907TRPBF

MOSFET 2N-CH 30V 9.1A/11A 8SO

Infineon Technologies

4,911 -
RFQ
IRF7907TRPBF

Datenblatt

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 9.1A, 11A 16.4mOhm @ 9.1A, 10V 2.35V @ 25µA 10nC @ 4.5V 850pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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