FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis
Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
BSM180D12P2C101

BSM180D12P2C101

MOSFET 2N-CH 1200V 204A MODULE

Rohm Semiconductor

1 -
RFQ
BSM180D12P2C101

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 23000pF @ 10V 1130W -40°C ~ 150°C (TJ) - - - Module
MSCSM120HM16T3AG

MSCSM120HM16T3AG

MOSFET 4N-CH 1200V 173A

Microchip Technology

8,197 -
RFQ
MSCSM120HM16T3AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM08T3AG

MSCSM120AM08T3AG

MOSFET 2N-CH 1200V 337A

Microchip Technology

9,113 -
RFQ
MSCSM120AM08T3AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 12mA 928nC @ 20V 12100pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M07CT6AG

MSCSM70VR1M07CT6AG

MOSFET 2N-CH 700V 349A

Microchip Technology

2,976 -
RFQ
MSCSM70VR1M07CT6AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M11CT6AG

MSCSM120VR1M11CT6AG

MOSFET 2N-CH 1200V 251A

Microchip Technology

9,541 -
RFQ
MSCSM120VR1M11CT6AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70TAM10TPAG

MSCSM70TAM10TPAG

MOSFET 6N-CH 700V 238A

Microchip Technology

4,778 -
RFQ
MSCSM70TAM10TPAG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM025T6AG

MSCSM70AM025T6AG

MOSFET 2N-CH 700V 689A

Microchip Technology

9,269 -
RFQ
MSCSM70AM025T6AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70HM05AG

MSCSM70HM05AG

MOSFET 4N-CH 700V 349A

Microchip Technology

6,010 -
RFQ
MSCSM70HM05AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM025D3AG

MSCSM70AM025D3AG

MOSFET 2N-CH 700V 689A

Microchip Technology

8,245 -
RFQ
MSCSM70AM025D3AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM16TPAG

MSCSM120TAM16TPAG

MOSFET 6N-CH 1200V 171A

Microchip Technology

5,194 -
RFQ
MSCSM120TAM16TPAG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM083AG

MSCSM120HM083AG

MOSFET 4N-CH 1200V 251A

Microchip Technology

7,235 -
RFQ
MSCSM120HM083AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM025T6LIAG

MSCSM70AM025T6LIAG

MOSFET 2N-CH 700V 689A

Microchip Technology

2,593 -
RFQ
MSCSM70AM025T6LIAG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M03CT6AG

MSCSM70VR1M03CT6AG

MOSFET 2N-CH 700V 585A

Microchip Technology

5,261 -
RFQ
MSCSM70VR1M03CT6AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 585A (Tc) 3.8mOhm @ 200A, 20V 2.4V @ 20mA 1075nC @ 20V 22500pF @ 700V 1.625kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042D3AG

MSCSM120AM042D3AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

8,526 -
RFQ
MSCSM120AM042D3AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042T6LIAG

MSCSM120AM042T6LIAG

MOSFET 2N-CH 1200V 495A

Microchip Technology

8,847 -
RFQ
MSCSM120AM042T6LIAG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70HM038AG

MSCSM70HM038AG

MOSFET 4N-CH 700V 464A

Microchip Technology

8,657 -
RFQ
MSCSM70HM038AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1.277kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M062CT6AG

MSCSM120VR1M062CT6AG

MOSFET 2N-CH 1200V 420A

Microchip Technology

6,745 -
RFQ
MSCSM120VR1M062CT6AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 420A (Tc) 6.2mOhm @ 200A, 20V 2.8V @ 15mA 1160nC @ 20V 15100pF @ 1000V 1.753kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM063AG

MSCSM120HM063AG

MOSFET 4N-CH 1200V 333A

Microchip Technology

5,753 -
RFQ
MSCSM120HM063AG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 12mA 928nC @ 20V 12000pF @ 1000V 873W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M16CTPAG

MSCSM120VR1M16CTPAG

MOSFET 6N-CH 1200V 171A

Microchip Technology

6,532 -
RFQ
MSCSM120VR1M16CTPAG

Datenblatt

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
WAS350M12BM3

WAS350M12BM3

MOSFET 2N-CH 1200V 417A

Wolfspeed, Inc.

5,400 -
RFQ
WAS350M12BM3

Datenblatt

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 417A (Tc) 5.2mOhm @ 350A, 15V 3.6V @ 85mA 844nC @ 15V 25700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
Total 5737 Record«Prev1... 146147148149150151152153...287Next»
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer