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0755-82798135FET-, MOSFET-Arrays
| Foto | Hersteller-Teilenr. | Verfügbarkeit | Preis | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | Technologie | Konfiguration | FET-Funktion | Drain-Source-Spannung (Vdss) | Strom - Dauer-Drain (Id) @ 25 °C | Rds Ein (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate-Ladung (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung – Max | Betriebstemperatur | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVMJD015N06CLTWGMOSFET 2N-CH 60V 10.1A 8LFPAK |
8,574 | - |
|
Datenblatt |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | - | 2 N-Channel (Dual) | - | 60V | 10.1A (Ta), 35A (Tc) | 14.4mOhm @ 17A, 10V | 2.2V @ 25µA | 9.4nC @ 10V | 643pF @ 30V | 3.1W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-LFPAK |
|
NVMJD7D4N04CLTWGMOSFET N-CH 40V LFPAK56 |
5,933 | - |
|
Datenblatt |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVMJD012N06CLTWGMOSFET 2N-CH 60V 11.5A 8LFPAK |
9,941 | - |
|
Datenblatt |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 11.5A (Ta), 42A (Tc) | 11.9mOhm @ 25A, 10V | 2.2V @ 30µA | 11.5nC @ 10V | 792pF @ 25V | 3.2W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-LFPAK |
|
NVMFD5C470NT1GMOSFET 2N-CH 40V 11.7A 8DFN |
5,906 | - |
|
Datenblatt |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 11.7A (Ta), 36A (Tc) | 11.7mOhm @ 10A, 10V | 3.5V @ 250µA | 8nC @ 10V | 420pF @ 25V | 3.1W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
NVMJD5D4N04CTWGMOSFET N-CH 40V LFPAK56 |
5,708 | - |
|
Datenblatt |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SP8J5FRATBMOSFET 2P-CH 7A 8SOP |
8,823 | - |
|
Datenblatt |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate, 4V Drive | - | 7A (Ta) | 28mOhm @ 7A, 10V | 2.5V @ 1mA | - | - | - | 150°C | Automotive | AEC-Q101 | Surface Mount | 8-SOP |
|
HP8M31TB1MOSFET N/P-CH 60V 8.5A 8HSOP |
1 | - |
|
Datenblatt |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 60V | 8.5A (Ta) | 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V | 3V @ 1mA | 12.3nC @ 10V, 38nC @ 10V | 470pF @ 30V, 2300pF @ 30V | 3W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
|
NVMFD5C462NLT1GMOSFET 2N-CH 40V 18A 8DFN |
8,993 | - |
|
Datenblatt |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 18A (Ta), 84A (Tc) | 4.7mOhm @ 10A, 10V | 2.2V @ 40µA | 11nC @ 4.5V | 1300pF @ 25V | 3W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
SLA5073MOSFET 6N-CH 60V 5A 15ZIP |
8,497 | - |
|
Datenblatt |
- | 15-SIP Exposed Tab, Formed Leads | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 5A | 300mOhm @ 3A, 4V | 2V @ 250µA | - | 320pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 15-ZIP |
|
CSD86356Q5DTMOSFET 2N-CH 25V 40A 8VSON-CLIP |
5,505 | - |
|
Datenblatt |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | Logic Level Gate, 5V Drive | 25V | 40A (Ta) | 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V | 1.85V @ 250µA, 1.5V @ 250µA | 7.9nC @ 4.5V, 19.3nC @ 4.5V | 1040pF @ 12.5V, 2510pF @ 12.5V | 12W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSON-CLIP (5x6) |
|
ALD110908ASALMOSFET 2N-CH 10.6V 8SOIC |
8,037 | - |
|
Datenblatt |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD110900ASALMOSFET 2N-CH 10.6V 8SOIC |
5,668 | - |
|
Datenblatt |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD1101SALMOSFET 2N-CH 10.6V 8SOIC |
2,230 | - |
|
Datenblatt |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD114835SCLMOSFET 4N-CH 10.6V 16SOIC |
8,147 | - |
|
Datenblatt |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
SQUN702E-T1_GE3MOSFET N/P-CH 40V/200V 30A DIE |
8,047 | - |
|
Datenblatt |
TrenchFET® | Die | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel, Common Drain | - | 40V, 200V | 30A (Tc), 20A (Tc) | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V | 2.5V @ 250µA, 3.5V @ 250µA | 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V | 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V | 48W (Tc), 60W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | Die |
|
ALD212900APALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
5,792 | - |
|
Datenblatt |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 10mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD1102ASALMOSFET 2P-CH 10.6V 8SOIC |
2,822 | - |
|
Datenblatt |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD110814SCLMOSFET 4N-CH 10.6V 16SOIC |
4 | - |
|
Datenblatt |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 5.4V | 1.42V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD110900PALMOSFET 2N-CH 10.6V 8PDIP |
2,732 | - |
|
Datenblatt |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD210800ASCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
3,194 | - |
|
Datenblatt |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 10mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |

