FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FF6MR12KM1BOSA1

FF6MR12KM1BOSA1

MOSFET 2N-CH 1200V 250A AG-62MM

Infineon Technologies

9,163 -
RFQ
FF6MR12KM1BOSA1

Datenblatt

CoolSiC™ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 250A (Tc) 5.81mOhm @ 250A, 15V 5.15V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MM
CAS120M12BM2

CAS120M12BM2

MOSFET 2N-CH 1200V 193A MODULE

Wolfspeed, Inc.

117 -
RFQ
CAS120M12BM2

Datenblatt

Z-Rec® Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 193A (Tc) 16mOhm @ 120A, 20V 2.6V @ 6mA (Typ) 378nC @ 20V 6470pF @ 800V 925W -40°C ~ 150°C (TJ) - - Chassis Mount Module
BSO4804HUMA2

BSO4804HUMA2

MOSFET 2N-CH 30V 8A 8DSO

Infineon Technologies

8,866 -
RFQ
BSO4804HUMA2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 8A (Ta) 20mOhm @ 8A, 10V 2V @ 30µA 17nC @ 5V 870pF @ 25V 2W -55°C ~ 150°C - - Surface Mount PG-DSO-8
CTLDM304P-M832DS TR

CTLDM304P-M832DS TR

MOSFET 2P-CH 30V 4.2A TLM832DS

Central Semiconductor Corp

2,961 -
RFQ
CTLDM304P-M832DS TR

Datenblatt

- 8-TDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 4.2A 70mOhm @ 4.2A, 10V 1.3V @ 250µA 6.4nC @ 4.5V 760pF @ 15V 1.65W -55°C ~ 150°C (TJ) - - Surface Mount TLM832DS
G1NP02LLE

G1NP02LLE

MOSFET 20V 1.3A SOT23-6L

Goford Semiconductor

150,000 -
RFQ
G1NP02LLE

Datenblatt

TrenchFET® SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 20V 1.3A (Tc), 1.1A (Tc) 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V 1V @ 250µA, 800mV @ 250µA 1nC @ 4.5V, 1.22nC @ 4.5V 146pF @ 10V, 177pF @ 10V 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
NTND31200PZTAG

NTND31200PZTAG

MOSFET P-CH

onsemi

924,421 -
RFQ
NTND31200PZTAG

Datenblatt

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
G4614

G4614

MOSFET N+P-CH 40V/-40V 6A/-7A SO

Goford Semiconductor

4,000 -
RFQ
G4614

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - - - 35mOhm @ 3A, 10V, 35mOhm @- 2A, -10V 2.5V @ 250µA 15nC @ 10V, 25nC @ -10V 523pF @ 20V, 1217pF @ -20V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G300N04S2

G300N04S2

MOSFET 2N-CH 40V 5.5A 8SOP

Goford Semiconductor

12,000 -
RFQ
G300N04S2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 5.5A (Tc) 30mOhm @ 3A, 10V 2.5V @ 250µA 10nC @ 10V 522pF @ 20V 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
PMCXB1000UEZ

PMCXB1000UEZ

MOSFET 30V

NXP Semiconductors

195,000 -
RFQ
PMCXB1000UEZ

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
NVJD4152PT1G

NVJD4152PT1G

MOSFET 2P-CH 20V 0.88A SC88

onsemi

34,274 -
RFQ
NVJD4152PT1G

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Bulk Active MOSFET (Metal Oxide) 2 P-Channel - 20V 880mA (Ta) 260mOhm @ 880mA, 4.5V 1.2V @ 250µA 2.2nC @ 4.5V 155pF @ 20V 272mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SC-88/SC70-6/SOT-363
6706A

6706A

MOSFET 30V 6.5A 8SOP

Goford Semiconductor

20,000 -
RFQ
6706A

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 30V 6.5A (Tc), 5A (Tc) 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V 2V @ 250µA, 2.5V @ 250µA 5.2nC @ 10V, 9.2nC @ 10V 255pF @ 15V, 520pF @ 15V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G4953S

G4953S

MOSFET 2P-CH 30V 5A 8SOP

Goford Semiconductor

20,000 -
RFQ
G4953S

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 30V 5A (Tc) 45mOhm @ 5A, 10V 3V @ 250µA 11nC @ 10V 520pF @ 15V 1.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G800N06S2

G800N06S2

MOSFET 2N-CH 60V 3A 8SOP

Goford Semiconductor

8,000 -
RFQ
G800N06S2

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 3A (Tc) 80mOhm @ 3A, 10V 1.2V @ 250µA 6nC @ 10V 458pF @ 30V 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G1K8P06S2

G1K8P06S2

MOSFET 60V 3.2A 8SOP

Goford Semiconductor

4,000 -
RFQ
G1K8P06S2

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 60V 3.2A (Tc) 170mOhm @ 1A, 10V 2.5V @ 250µA 11.3nC @ 10V 594pF @ 30V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
G085C03D32

G085C03D32

MOSFET N/P-CH 30V 28A 8DFN

Goford Semiconductor

5,000 -
RFQ
G085C03D32

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 28A (Tc), 12A (Tc) 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V 2V @ 250µA 18nC @ 10V, 25nC @ 10V 1085pF @ 15V, 1352pF @ 15V 13W (Tc), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G160N04S2

G160N04S2

MOSFET 2N-CH 40V 9A 8SOP

Goford Semiconductor

4,000 -
RFQ
G160N04S2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 9A (Tc) 15mOhm @ 4A, 10V 2V @ 250µA 24nC @ 10V 989pF @ 20V 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FDZ1827NZ

FDZ1827NZ

MOSFET 2N-CH 20V 10A 6WLCSP

Fairchild Semiconductor

20,000 -
RFQ
FDZ1827NZ

Datenblatt

PowerTrench® 6-XFBGA, WLCSP Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 20V 10A (Ta) 13mOhm @ 1A, 4.5V 1.2V @ 250µA 24nC @ 10V 2055pF @ 10V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1.3x2.3)
G350N06D32

G350N06D32

MOSFET 2N-CH 60V 10A 8DFN

Goford Semiconductor

5,000 -
RFQ
G350N06D32

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 10A (Tc) 35mOhm @ 5A, 10V 2.5V @ 250µA 25nC @ 10V 1330pF @ 30V 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G170P02D32

G170P02D32

MOSFET P-CH 20V 20A DUAL DFN3*3-

Goford Semiconductor

5,000 -
RFQ
G170P02D32

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 20V 20A (Tc) 21mOhm @ 6A, 4.5V 1V @ 250µA 2.5nC @ 10V 2193pF @ 10V - -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G4616

G4616

MOSFET N/P-CH 40V 8A/7A 8SOP

Goford Semiconductor

40,000 -
RFQ
G4616

Datenblatt

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 40V 8A (Tc), 7A (Tc) 20mOhm @ 8A, 10V, 35mOhm @ 7A, 10V 2.5V @ 250µA 12nC @ 10V, 13nC @ 10V 415pF @ 20V, 520pF @ 20V 2W (Tc), 2.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
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