FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis
Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FDMD8560L

FDMD8560L

MOSFET 2N-CH 60V 22A 8PWR 5X6

onsemi

1,111 -
RFQ
FDMD8560L

Datenblatt

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 60V 22A, 93A 3.2mOhm @ 22A, 10V 3V @ 250µA 128nC @ 10V 11130pF @ 30V 2.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-Power 5x6
FDMD86100

FDMD86100

MOSFET 2N-CH 100V 10A 8PWR 5X6

onsemi

486 -
RFQ
FDMD86100

Datenblatt

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Source - 100V 10A 10.5mOhm @ 10A, 10V 4V @ 250µA 30nC @ 10V 2060pF @ 50V 2.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-Power 5x6
EFC4C002NLTDG

EFC4C002NLTDG

MOSFET 2N-CH 8WLCSP

onsemi

4,750 -
RFQ
EFC4C002NLTDG

Datenblatt

- 8-XFBGA, WLCSP Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate - - - 2.2V @ 1mA 45nC @ 4.5V 6200pF @ 15V 2.6W 150°C (TJ) - - Surface Mount 8-WLCSP (6x2.5)
FDMS8095AC

FDMS8095AC

MOSFET N/P-CH 150V 6.2A/1A 8MLP

onsemi

3,000 -
RFQ
FDMS8095AC

Datenblatt

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 150V 6.2A, 1A 30mOhm @ 6.2A, 10V 4V @ 250µA 30nC @ 10V 2020pF @ 75V, 230pF @ 75V 2.3W -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (5x6), Power56
SLA5065

SLA5065

MOSFET 4N-CH 60V 7A 15ZIP

Sanken Electric USA Inc.

722 -
RFQ
SLA5065

Datenblatt

- 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 4 N-Channel - 60V 7A 100mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 4.8W 150°C (TJ) - - Through Hole 15-ZIP
FD6M045N06

FD6M045N06

MOSFET 2N-CH 60V 60A EPM15

Fairchild Semiconductor

1,409 -
RFQ
FD6M045N06

Datenblatt

Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 60A 4.5mOhm @ 40A, 10V 4V @ 250µA 87nC @ 10V 3890pF @ 25V - -40°C ~ 150°C (TJ) - - Through Hole EPM15
NTMFD5C462NLT1G

NTMFD5C462NLT1G

MOSFET 40V S08FL

onsemi

1,500 -
RFQ
NTMFD5C462NLT1G

Datenblatt

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
SLA5068

SLA5068

MOSFET 6N-CH 60V 7A 15ZIP

Sanken Electric USA Inc.

352 -
RFQ
SLA5068

Datenblatt

- 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 60V 7A 100mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 5W 150°C (TJ) - - Through Hole 15-ZIP
FD6M043N08

FD6M043N08

MOSFET 2N-CH 75V 65A EPM15

Fairchild Semiconductor

1,404 -
RFQ
FD6M043N08

Datenblatt

Power-SPM™ EPM15 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 75V 65A 4.3mOhm @ 40A, 10V 4V @ 250µA 148nC @ 10V 6180pF @ 25V - -40°C ~ 150°C (TJ) - - Through Hole EPM15
SD5401CY SOIC 14L ROHS

SD5401CY SOIC 14L ROHS

MOSFET 4N-CH 10V 0.05A 14SOIC

Linear Integrated Systems, Inc.

4,514 -
RFQ
SD5401CY SOIC 14L ROHS

Datenblatt

SD5401 14-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 4 N-Channel - 10V 50mA (Ta) 75Ohm @ 1mA, 5V 1.5V @ 1µA - - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 14-SOIC
SD5400CY SOIC 14L ROHS

SD5400CY SOIC 14L ROHS

MOSFET 4N-CH 20V 0.05A 14SOIC

Linear Integrated Systems, Inc.

1,658 -
RFQ
SD5400CY SOIC 14L ROHS

Datenblatt

SD5400 14-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 4 N-Channel - 20V 50mA (Ta) 75Ohm @ 1mA, 5V 1.5V @ 1µA - - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 14-SOIC
FX50SMJ-2#B00

FX50SMJ-2#B00

MOSFET P-CH

Renesas Electronics Corporation

5,980 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
SLA5064

SLA5064

MOSFET 3N/3P-CH 60V 10A 12SIP

Sanken Electric USA Inc.

972 -
RFQ
SLA5064

Datenblatt

- 12-SIP Exposed Tab Bulk Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 10A 140mOhm @ 5A, 4V - - 460pF @ 10V, 1200pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
SCX6206TQM/V2/NOPB

SCX6206TQM/V2/NOPB

MOSFET

Texas Instruments

1,319 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
FAM65CR51XZ1

FAM65CR51XZ1

MOSFET 2N-CH 650V 64A APMCA-A16

onsemi

8,574 -
RFQ
FAM65CR51XZ1

Datenblatt

- 12-SSIP Exposed Pad, Formed Leads Tube Active MOSFET (Metal Oxide) 2 N-Channel - 650V 64A (Tc) 51mOhm @ 20A, 10V 5V @ 3.3mA 123nC @ 10V 4864pF @ 400V 463W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole APMCA-A16
FTCO3V455A1

FTCO3V455A1

MOSFET 6N-CH 40V 150A MODULE

onsemi

6,808 -
RFQ
FTCO3V455A1

Datenblatt

SPM® 19-PowerDIP Module Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) Logic Level Gate 40V 150A 1.66mOhm @ 80A, 10V - - - 115W 175°C (TJ) - - Through Hole Module
RFF70N06/3

RFF70N06/3

MOSFET N-CH 60V 25A

Harris Corporation

40 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
FF45MR12W1M1B11BOMA1

FF45MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

6,317 -
RFQ
FF45MR12W1M1B11BOMA1

Datenblatt

CoolSiC™+ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V (Typ) 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
DF23MR12W1M1PB11BPSA1

DF23MR12W1M1PB11BPSA1

MOSFET 2N-CH 1200V 25A AG-EASY1B

Infineon Technologies

24 -
RFQ
DF23MR12W1M1PB11BPSA1

Datenblatt

EasyPACK™ Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B-2
FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1

MOSFET 2N-CH 1200V 50A MODULE

Infineon Technologies

246 -
RFQ
FF23MR12W1M1B11BOMA1

Datenblatt

CoolSiC™+ Module Tray Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 50A 23mOhm @ 50A, 15V 5.55V @ 20mA 125nC @ 15V 3950pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
Total 5737 Record«Prev1... 119120121122123124125126...287Next»
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer