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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    PJD14P10A_L2_00001

    PJD14P10A_L2_00001

    100V P-CHANNEL MOSFET

    Panjit International Inc.

    		 3,279 -
    RFQ
    		PJD14P10A_L2_00001

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2.5A (Ta), 14A (Tc) 4.5V, 10V 140mOhm @ 7A, 10V 3V @ 250µA 40.7 nC @ 10 V ±20V 2298 pF @ 30 V - 2W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    NTD14N03RT4G

    NTD14N03RT4G

    MOSFET N-CH 25V 2.5A DPAK

    onsemi

    		 2,780 -
    RFQ
    		NTD14N03RT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 2.5A (Ta) 4.5V, 10V 95mOhm @ 5A, 10V 2V @ 250µA 1.8 nC @ 5 V ±20V 115 pF @ 20 V - 1.04W (Ta), 20.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    IPD50N04S410ATMA1

    IPD50N04S410ATMA1

    MOSFET N-CH 40V 50A TO252-3-313

    Infineon Technologies

    		 2,488 -
    RFQ
    		IPD50N04S410ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 9.3mOhm @ 50A, 10V 4V @ 15µA 18.2 nC @ 10 V ±20V 1430 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-313
    ISP25DP06LMXTSA1

    ISP25DP06LMXTSA1

    MOSFET P-CH 60V 1.9A SOT223-4

    Infineon Technologies

    		 1,229 -
    RFQ
    		ISP25DP06LMXTSA1

    Datenblatt

         		OptiMOS™ TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 4.5V, 10V 250mOhm @ 1.9A, 10V 2V @ 270µA 13.9 nC @ 10 V ±20V 420 pF @ 30 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4
    RQ5L035GNTCL

    RQ5L035GNTCL

    MOSFET N-CH 60V 3.5A TSMT3

    Rohm Semiconductor

    		 5,684 -
    RFQ
    		RQ5L035GNTCL

    Datenblatt

         		- SC-96 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 3.5A (Ta) 4.5V, 10V 50mOhm @ 3.5A, 10V 2.7V @ 50µA 7.3 nC @ 10 V ±20V 375 pF @ 30 V - 700mW (Ta) 150°C (TJ) - - Surface Mount TSMT3
    NVD3055-150T4G-VF01

    NVD3055-150T4G-VF01

    MOSFET N-CH 60V 9A DPAK

    onsemi

    		 4,775 -
    RFQ
    		NVD3055-150T4G-VF01

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) 10V 150mOhm @ 4.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 280 pF @ 25 V - 1.5W (Ta), 28.8W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    IPN60R600P7SATMA1

    IPN60R600P7SATMA1

    MOSFET N-CHANNEL 600V 6A SOT223

    Infineon Technologies

    		 3,616 -
    RFQ
    		IPN60R600P7SATMA1

    Datenblatt

         		CoolMOS™ P7 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 7W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-SOT223
    BUK9Y41-80E,115

    BUK9Y41-80E,115

    MOSFET N-CH 80V 24A LFPAK56

    Nexperia USA Inc.

    		 2,133 -
    RFQ
    		BUK9Y41-80E,115

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Tc) 5V, 10V 41mOhm @ 5A, 10V 2.1V @ 1mA 11.9 nC @ 5 V ±10V 1570 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    PSMN6R1-30YLDX

    PSMN6R1-30YLDX

    MOSFET N-CH 30V 66A LFPAK56

    Nexperia USA Inc.

    		 2,088 -
    RFQ
    		PSMN6R1-30YLDX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 66A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.2V @ 1mA 13.6 nC @ 10 V ±20V 817 pF @ 15 V - 47W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    ZVNL110ASTZ

    ZVNL110ASTZ

    MOSFET N-CH 100V 320MA E-LINE

    Diodes Incorporated

    		 2,000 -
    RFQ
    		ZVNL110ASTZ

    Datenblatt

         		- E-Line-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 320mA (Ta) 5V, 10V 3Ohm @ 500mA, 10V 1.5V @ 1mA - ±20V 75 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole E-Line (TO-92 compatible)
    ZXMN2B03E6TA

    ZXMN2B03E6TA

    MOSFET N-CH 20V 4.3A SOT23-6

    Diodes Incorporated

    		 1,707 -
    RFQ
    		ZXMN2B03E6TA

    Datenblatt

         		- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 1.8V, 4.5V 40mOhm @ 4.3A, 4.5V 1V @ 250µA 14.5 nC @ 4.5 V ±8V 1160 pF @ 10 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
    DMN3009SFG-7

    DMN3009SFG-7

    MOSFET N-CH 30V 16A PWRDI3333

    Diodes Incorporated

    		 144 -
    RFQ
    		DMN3009SFG-7

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 45A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 42 nC @ 10 V ±20V 2000 pF @ 15 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount POWERDI3333-8
    IPP65R225C7XKSA1

    IPP65R225C7XKSA1

    MOSFET N-CH 650V 11A TO220-3

    Infineon Technologies

    		 160 -
    RFQ
    		IPP65R225C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    TPN2R903PL,L1Q

    TPN2R903PL,L1Q

    MOSFET N-CH 30V 70A 8TSON

    Toshiba Semiconductor and Storage

    		 36,136 -
    RFQ
    		TPN2R903PL,L1Q

    Datenblatt

         		U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) 4.5V, 10V 2.9mOhm @ 35A, 10V 2.1V @ 200µA 26 nC @ 10 V ±20V 2300 pF @ 15 V - 630mW (Ta), 75W (Tc) 175°C - - Surface Mount 8-TSON Advance (3.1x3.1)
    IPD70R1K4CEAUMA1

    IPD70R1K4CEAUMA1

    MOSFET N-CH 700V 5.4A TO252-3

    Infineon Technologies

    		 14,900 -
    RFQ
    		IPD70R1K4CEAUMA1

    Datenblatt

         		CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 700 V 5.4A (Tc) 10V 1.4Ohm @ 1A, 10V 3.5V @ 130µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 53W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
    RTR020P02HZGTL

    RTR020P02HZGTL

    MOSFET P-CH 20V 2A TSMT3

    Rohm Semiconductor

    		 14,111 -
    RFQ
    		RTR020P02HZGTL

    Datenblatt

         		- SC-96 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 135mOhm @ 2A, 4.5V 2V @ 1mA 4.9 nC @ 4.5 V ±12V 430 pF @ 10 V - 700mW (Ta) 150°C (TJ) Automotive AEC-Q101 Surface Mount TSMT3
    DMP1007UCB9-7

    DMP1007UCB9-7

    MOSFET P-CH 8V 13.2A U-WLB1515-9

    Diodes Incorporated

    		 6,836 -
    RFQ
    		DMP1007UCB9-7

    Datenblatt

         		- 9-UFBGA, WLBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8 V 13.2A (Ta) 2.5V, 4.5V 5.7mOhm @ 2A, 4.5V 1.1V @ 250µA 8.2 nC @ 4.5 V ±6V 900 pF @ 4 V - 840mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-WLB1515-9 (Type C)
    NTTFS6H854NLTAG

    NTTFS6H854NLTAG

    MOSFET N-CH 80V 10A/41A 8WDFN

    onsemi

    		 3,394 -
    RFQ
    		NTTFS6H854NLTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta), 41A (Tc) 4.5V, 10V 13.4mOhm @ 10A, 10V 2V @ 45µA 17 nC @ 10 V ±20V 902 pF @ 40 V - 3.2W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
    SI4134DY-T1-E3

    SI4134DY-T1-E3

    MOSFET N-CH 30V 14A 8SO

    Vishay Siliconix

    		 3,214 -
    RFQ
    		SI4134DY-T1-E3

    Datenblatt

         		TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Tc) 10V 14mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 846 pF @ 15 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IPD25DP06NMATMA1

    IPD25DP06NMATMA1

    MOSFET P-CH 60V 6.5A TO252-3

    Infineon Technologies

    		 2,475 -
    RFQ
    		IPD25DP06NMATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 6.5A (Tc) 10V 250mOhm @ 6.5A, 10V 4V @ 270µA 10.6 nC @ 10 V ±20V 420 pF @ 30 V - 28W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-313
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