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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SSM6J825R,LF

    SSM6J825R,LF

    P-CH MOSFET -30V, -20/+10V, -4A

    Toshiba Semiconductor and Storage

    		 5,947 -
    RFQ
    		SSM6J825R,LF Datenblatt - 6-SMD, Flat Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4V, 10V 45mOhm @ 4A, 10V 2V @ 250µA 6.2 nC @ 4.5 V +10V, -20V 492 pF @ 10 V - 1.5W (Ta) 150°C - - Surface Mount 6-TSOP-F
    SSM6J207FE,LF

    SSM6J207FE,LF

    MOSFET P-CH 30V 1.4A ES6

    Toshiba Semiconductor and Storage

    		 3,375 -
    RFQ
    		SSM6J207FE,LF Datenblatt U-MOSII SOT-563, SOT-666 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4V, 10V 251mOhm @ 650mA, 10V 2.6V @ 1mA - ±20V 137 pF @ 15 V - 500mW (Ta) 150°C (TJ) - - Surface Mount ES6
    DMN6075SQ-7

    DMN6075SQ-7

    MOSFET BVDSS: 41V~60V SOT23 T&R

    Diodes Incorporated

    		 3,309 -
    RFQ
    		DMN6075SQ-7 Datenblatt - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Ta) 4.5V, 10V 85mOhm @ 3.2A, 10V 3V @ 250µA 12.3 nC @ 10 V ±20V 606 pF @ 20 V - 800mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3
    MD06P115

    MD06P115

    MOSFET SOT26 P -60V 0.085OHM

    Diotec Semiconductor

    		 3,000 -
    RFQ
    		MD06P115 Datenblatt - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel - - 3.1A - - - - - - - 1.5W - - - Surface Mount SOT-26
    PMPB30XPEX

    PMPB30XPEX

    PMPB30XPE/SOT1220/SOT1220

    Nexperia USA Inc.

    		 2,938 -
    RFQ
    		PMPB30XPEX Datenblatt - 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 8.5A (Ta) 2.5V, 4.5V 34mOhm @ 6.2A, 4.5V 1.25V @ 250µA 19 nC @ 4.5 V +8V, -12V 1517 pF @ 10 V - 2W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount DFN2020MD-6
    SI2305CDS-T1-BE3

    SI2305CDS-T1-BE3

    P-CHANNEL 8-V (D-S) MOSFET

    Vishay Siliconix

    		 2,810 -
    RFQ
    		SI2305CDS-T1-BE3 Datenblatt - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8 V 4.4A (Ta), 5.8A (Tc) 1.8V, 4.5V 35mOhm @ 4.4A, 4.5V 1V @ 250µA 30 nC @ 8 V ±8V 960 pF @ 4 V - 960mW (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    PMN70EPEX

    PMN70EPEX

    MOSFET P-CH 30V 4.4A 6TSOP

    Nexperia USA Inc.

    		 2,243 -
    RFQ
    		PMN70EPEX Datenblatt - SC-74, SOT-457 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.4A (Ta) 4.5V, 10V 80mOhm @ 3.3A, 10V 3V @ 250µA 11.5 nC @ 10 V ±20V 370 pF @ 15 V - 570mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    DMG6968UQ-7

    DMG6968UQ-7

    MOSFET N-CH 20V 6.5A SOT23-3

    Diodes Incorporated

    		 2,205 -
    RFQ
    		DMG6968UQ-7 Datenblatt - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 1.8V, 4.5V 25mOhm @ 6.5A, 4.5V 900mV @ 250µA 8.5 nC @ 4.5 V ±12V 151 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    PMPB20ENZ

    PMPB20ENZ

    MOSFET N-CH 30V 7.2A DFN2020MD-6

    Nexperia USA Inc.

    		 2,125 -
    RFQ
    		PMPB20ENZ Datenblatt - 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta) 4.5V, 10V 19.5mOhm @ 7A, 10V 2V @ 250µA 10.8 nC @ 10 V ±20V 435 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN2020MD-6
    DMP22D4UFO-7B

    DMP22D4UFO-7B

    MOSFET P-CH 20V 530MA 3DFN

    Diodes Incorporated

    		 30,282 -
    RFQ
    		DMP22D4UFO-7B Datenblatt - 3-XFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 530mA (Ta) 1.5V, 4.5V 1.9Ohm @ 100mA, 4.5V 1V @ 250µA 0.4 nC @ 4.5 V ±8V 28.7 pF @ 15 V - 820mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN0604-3
    DMG302PU-13

    DMG302PU-13

    MOSFET P-CH 25V 170MA SOT23

    Diodes Incorporated

    		 7,935 -
    RFQ
    		DMG302PU-13 Datenblatt - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 25 V 170mA (Ta) 2.7V, 4.5V 10Ohm @ 200mA, 4.5V 1.5V @ 250µA 0.35 nC @ 4.5 V -8V 27.2 pF @ 10 V - 320mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    PMPB12R5UPEX

    PMPB12R5UPEX

    PMPB12R5UPE/SOT1220-2/DFN2020M

    Nexperia USA Inc.

    		 3,355 -
    RFQ
    		PMPB12R5UPEX Datenblatt - 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.5V, 4.5V 14.4mOhm @ 9.4A, 4.5V 900mV @ 250µA 38 nC @ 4.5 V ±10V 2000 pF @ 10 V - 1.9W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN2020M-6
    DMN2080UCB4-7

    DMN2080UCB4-7

    MOSFET N-CH 20V 3A X2-WLB0606-4

    Diodes Incorporated

    		 2,955 -
    RFQ
    		DMN2080UCB4-7 Datenblatt - 4-XFBGA, WLBGA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.5V, 4.5V 56mOhm @ 1A, 4.5V 1V @ 250µA 7.4 nC @ 4.5 V ±8V 540 pF @ 10 V - 710mW -55°C ~ 150°C (TJ) - - Surface Mount X2-WLB0606-4
    DMP2305UVT-7

    DMP2305UVT-7

    MOSFET P-CH 20V 4.2A SOT23-3

    Diodes Incorporated

    		 1,660 -
    RFQ
    		DMP2305UVT-7 Datenblatt - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 1.8V, 4.5V 60mOhm @ 4.2A, 4.5V 900mV @ 250µA 7.6 nC @ 4.5 V ±8V 727 pF @ 20 V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    SI1079X-T1-GE3

    SI1079X-T1-GE3

    MOSFET P-CH 30V 1.44A SC89-6

    Vishay Siliconix

    		 4,890 -
    RFQ
    		SI1079X-T1-GE3 Datenblatt - SOT-563, SOT-666 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 1.44A (Ta) 2.5V, 4.5V 100mOhm @ 1.4A, 4.5V 1.5V @ 250µA 26 nC @ 10 V ±12V 750 pF @ 15 V - 330mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-89-6
    PJW4N06A_R2_00001

    PJW4N06A_R2_00001

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,298 -
    RFQ
    		PJW4N06A_R2_00001 Datenblatt - TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Ta) 4.5V, 10V 100mOhm @ 3A, 10V 2.5V @ 250µA 5.1 nC @ 4.5 V ±20V 509 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    DMN2026UVT-7

    DMN2026UVT-7

    MOSFET N-CH 20V 6.2A TSOT-26

    Diodes Incorporated

    		 2,989 -
    RFQ
    		DMN2026UVT-7 Datenblatt - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 6.2A (Tc) 2.5V, 4.5V 24mOhm @ 6.2A, 4.5V 1.5V @ 250µA 18.4 nC @ 8 V ±10V 887 pF @ 10 V - 1.15W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
    SI3440ADV-T1-BE3

    SI3440ADV-T1-BE3

    N-CHANNEL 150-V (D-S) MOSFET

    Vishay Siliconix

    		 2,980 -
    RFQ
    		SI3440ADV-T1-BE3 Datenblatt TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 1.6A (Ta), 2.2A (Tc) 7.5V, 10V 380mOhm @ 1.5A, 10V 4V @ 250µA 4 nC @ 10 V ±20V 80 pF @ 75 V - 2W (Ta), 3.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
    DMN2015UFDE-7

    DMN2015UFDE-7

    MOSFET N-CH 20V 10.5A 6UDFN

    Diodes Incorporated

    		 2,960 -
    RFQ
    		DMN2015UFDE-7 Datenblatt - 6-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 10.5A (Ta) 1.5V, 4.5V 11.6mOhm @ 8.5A, 4.5V 1.1V @ 250µA 45.6 nC @ 10 V ±12V 1779 pF @ 10 V - 660mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type E)
    DMP3045LVT-7

    DMP3045LVT-7

    MOSFET BVDSS: 25V~30V TSOT26 T&R

    Diodes Incorporated

    		 2,669 -
    RFQ
    		DMP3045LVT-7 Datenblatt - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 5.4A (Ta) 4.5V, 10V 42mOhm @ 4.9A, 10V 2.1V @ 250µA 14.3 nC @ 10 V ±20V 749 pF @ 15 V - 1.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
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