FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPD50P04P4L11AUMA1

IPD50P04P4L11AUMA1

MOSFET

Infineon Technologies

3,526 -
RFQ

-

OptiMOS™ P2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 10.6mOhm @ 50A, 10V 2.2V @ 85µA 59 nC @ 10 V +5V, -16V 3900 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-313
IPB180P04P4L02AUMA2

IPB180P04P4L02AUMA2

MOSFET

Infineon Technologies

7,423 -
RFQ

-

OptiMOS™ P2 TO-263-7, D2PAK (6 Leads + Tab) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 4.5V, 10V 2.4mOhm @ 100A, 10V 2.2V @ 410µA 286 nC @ 10 V +5V, -16V 18700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
IPD70P04P4L08AUMA2

IPD70P04P4L08AUMA2

MOSFET

Infineon Technologies

8,537 -
RFQ

-

OptiMOS™ P2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 7.8mOhm @ 70A, 10V 2.2V @ 120µA 92 nC @ 10 V +5V, -16V 5430 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-313
IPD50P04P413AUMA2

IPD50P04P413AUMA2

MOSFET

Infineon Technologies

2,415 -
RFQ

-

OptiMOS™ P2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 12.6mOhm @ 50A, 10V 4V @ 85µA 51 nC @ 10 V ±20V 3670 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-313
DMN2710UFBQ-7B

DMN2710UFBQ-7B

MOSFET BVDSS: 8V~24V X1-DFN1006-

Diodes Incorporated

8,466 -
RFQ
DMN2710UFBQ-7B

Datenblatt

- 3-UFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 1.3A (Ta) 1.8V, 4.5V 450mOhm @ 600mA, 4.5V 1V @ 250µA 0.6 nC @ 4.5 V ±6V 42 pF @ 16 V - 720mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X1-DFN1006-3
FDB075N15A-F085C

FDB075N15A-F085C

MODULE

onsemi

9,086 -
RFQ

-

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
AOTF12N50L

AOTF12N50L

MOSFET

Alpha & Omega Semiconductor Inc.

2,030 -
RFQ

-

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 520mOhm @ 6A, 10V 4.5V @ 250µA 37 nC @ 10 V ±30V 1633 pF @ 25 V - 50W -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AOTF14N50L

AOTF14N50L

MOSFET

Alpha & Omega Semiconductor Inc.

4,893 -
RFQ

-

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tj) 10V 380mOhm @ 7A, 10V 4.5V @ 250µA 51 nC @ 10 V ±30V 2297 pF @ 25 V - 50W -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AOD1N60M

AOD1N60M

MOSFET

Alpha & Omega Semiconductor Inc.

8,377 -
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.3A (Tc) 10V 9Ohm @ 650mA, 10V 4.5V @ 250µA 8 nC @ 10 V ±30V 160 pF @ 25 V - 45W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
AOTF42S60

AOTF42S60

MOSFET

Alpha & Omega Semiconductor Inc.

9,205 -
RFQ

-

aMOS™ TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 39A 10V 99mOhm @ 21A, 10V 3.8V @ 250µA 40 nC @ 10 V ±30V 2154 pF @ 100 V - 50W -55°C ~ 150°C (TJ) - - Through Hole TO-220F
AOTF11N60

AOTF11N60

MOSFET

Alpha & Omega Semiconductor Inc.

2,896 -
RFQ

-

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A 10V 650mOhm @ 5.5A, 10V 4.5V @ 250µA 30.6 nC @ 10 V ±30V 1656 pF @ 25 V - 50W -55°C ~ 150°C - - Through Hole TO-220F
AOTF15S60

AOTF15S60

MOSFET

Alpha & Omega Semiconductor Inc.

8,866 -
RFQ

-

aMOS™ TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 7.5A, 10V 3.8V @ 250µA 15.6 nC @ 10 V ±30V 717 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
SISC262SN06LX6SA1

SISC262SN06LX6SA1

MOSFET

Infineon Technologies

9,641 -
RFQ

-

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
FMD15-06KC5-PT

FMD15-06KC5-PT

MOSFET

IXYS

3,607 -
RFQ

-

CoolMOS™, HiPerDyn™ ISOPLUSi5-PAK™ Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
GT095N10K

GT095N10K

MOSFET N-CH 100V 55A TO-252

Goford Semiconductor

3,113 -
RFQ
GT095N10K

Datenblatt

SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA - ±20V - - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GPIHV5DK

GPIHV5DK

GaNFET N-CH 1200V 5A TO252

GaNPower

2,746 -
RFQ
GPIHV5DK

Datenblatt

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 1200 V 5A 6V - 1.7V @ 3.5mA 1.9 nC @ 6 V +7.5V, -12V 90 pF @ 700 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
GPIHV10DK

GPIHV10DK

GaNFET N-CH 1200V 10A TO252

GaNPower

2,391 -
RFQ
GPIHV10DK

Datenblatt

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 1200 V 10A 6V - 1.7V @ 3.5mA 3.5 nC @ 6 V +7.5V, -12V 105 pF @ 700 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
GPIHV7DK

GPIHV7DK

GaNFET N-CH 1200V 7A TO252

GaNPower

9,717 -
RFQ
GPIHV7DK

Datenblatt

- - Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 1200 V 7A 6V - 1.7V @ 3.5mA 3.1 nC @ 6 V +7.5V, -12V 90 pF @ 700 V - - -55°C ~ 150°C (TJ) - - Surface Mount -
ICE20N60FP

ICE20N60FP

Superjunction MOSFET

IceMOS Technology

7,413 -
RFQ
ICE20N60FP

Datenblatt

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 3.9V @ 250µA 59 nC @ 10 V ±20V 2064 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
AOD4184L

AOD4184L

MOSFET

Alpha & Omega Semiconductor Inc.

5,914 -
RFQ

-

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta), 50A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.6V @ 250µA 33 nC @ 10 V ±20V 1800 pF @ 20 V - 2.3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
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