FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
MCG10P03-TP

MCG10P03-TP

MOSFET P-CHANNEL MOSFET

Micro Commercial Co

3,034 -
RFQ
MCG10P03-TP Datenblatt - 8-PowerVDFN Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 10A (Tc) 2.5V, 4.5V 26mOhm @ 10A, 4.5V 1.5V @ 250µA 27 nC @ 4.5 V ±12V 1550 pF @ 15 V - 20W -55°C ~ 150°C (TJ) - - Surface Mount DFN3030
MCT06P02-TP

MCT06P02-TP

MOSFET P-CHANNEL MOSFET

Micro Commercial Co

5,494 -
RFQ
MCT06P02-TP Datenblatt - TO-261-4, TO-261AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6A 2.5V, 4.5V 60mOhm @ 6A, 4.5V 900mV @ 250µA 15 nC @ 4.5 V ±12V 740 pF @ 4 V - 3W -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
MCQ15N10B-TP

MCQ15N10B-TP

MOSFET N-CHANNEL MOSFET

Micro Commercial Co

8,367 -
RFQ
MCQ15N10B-TP Datenblatt - 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 15A (Tj) 4.5V, 10V 9.5mOhm @ 12A, 10V 2.5V @ 250µA 60.7 nC @ 10 V ±20V 3530 pF @ 50 V - 4W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
SIL04P06-TP

SIL04P06-TP

MOSFET P-CHANNEL MOSFET

Micro Commercial Co

7,355 -
RFQ
SIL04P06-TP Datenblatt - SOT-23-6 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 3.5A 4.5V, 10V 80mOhm @ 3.1A, 10V 3V @ 250µA 12 nC @ 4.5 V ±20V 650 pF @ 15 V - 2W -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
GPIXV30DFN

GPIXV30DFN

GANFET N-CH 1200V 30A DFN8X8

GaNPower

9,676 -
RFQ
GPIXV30DFN Datenblatt - Die Bag Active N-Channel GaNFET (Gallium Nitride) 1200 V 30A 6V - 1.4V @ 3.5mA 8.25 nC @ 6 V +7.5V, -12V 236 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount Die
SSM3K121TU

SSM3K121TU

MOSFET N-CH 20V 3.5A SC70

Toshiba Semiconductor and Storage

8,316 -
RFQ
SSM3K121TU Datenblatt - 3-SMD, Flat Leads Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 1.5V, 4V 48mOhm @ 2A, 4V 1V @ 1mA 5.9 nC @ 4 V ±10V 400 pF @ 10 V - 500mW (Ta) 150°C - - Surface Mount UFM
IAUT300N08S5N012ATMA1

IAUT300N08S5N012ATMA1

MOSFET_(75V 120V(

Infineon Technologies

2,550 -
RFQ
IAUT300N08S5N012ATMA1 Datenblatt OptiMOS™ 5 8-PowerSFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 80 V 300A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Automotive - Surface Mount PG-HSOF-8-1
IGLR60R260D1E8238XUMA1

IGLR60R260D1E8238XUMA1

GAN HV

Infineon Technologies

9,802 -
RFQ
IGLR60R260D1E8238XUMA1 Datenblatt CoolGaN™ 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 600 V 10.4A (Tc) - - 1.6V @ 690µA - -10V 110 pF @ 400 V - 52W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-7
IGLR60R190D1E8238XUMA1

IGLR60R190D1E8238XUMA1

GAN HV

Infineon Technologies

7,361 -
RFQ
IGLR60R190D1E8238XUMA1 Datenblatt CoolGaN™ 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 600 V 12.8A (Tc) - - 1.6V @ 960µA - -10V 157 pF @ 400 V - 55.5W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-6
IGOT60R070D1E8237AUMA1

IGOT60R070D1E8237AUMA1

GAN HV

Infineon Technologies

5,399 -
RFQ
IGOT60R070D1E8237AUMA1 Datenblatt CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Tape & Reel (TR) Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-87
TJ20A10M3(STA4,Q

TJ20A10M3(STA4,Q

TJ20A10M3(STA4,Q

Toshiba Semiconductor and Storage

2,915 -
RFQ
TJ20A10M3(STA4,Q Datenblatt U-MOSVI TO-220-3 Full Pack Tube Active P-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 10V 90mOhm @ 10A, 10V 4V @ 1mA 120 nC @ 10 V ±20V 5500 pF @ 10 V - 35W (Tc) 150°C - - Through Hole TO-220SIS
DMN3732UFB4-7

DMN3732UFB4-7

MOSFET BVDSS: 25V~30V X2-DFN1006

Diodes Incorporated

4,376 -
RFQ
DMN3732UFB4-7 Datenblatt - 3-XFDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 1.3A (Ta) 1.8V, 4.5V 460mOhm @ 200mA, 4.5V 950mV @ 250µA 0.9 nC @ 4.5 V ±8V 40.8 pF @ 25 V - 490mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN1006-3
DMTH46M7SFVWQ-13

DMTH46M7SFVWQ-13

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

3,138 -
RFQ
DMTH46M7SFVWQ-13 Datenblatt - 8-PowerVDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 16.3A (Ta), 67.2A (Tc) 10V 7.4mOhm @ 20A, 10V 4V @ 250µA 14.8 nC @ 10 V ±20V 1315 pF @ 20 V - 3.2W (Ta), 54.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
DMTH46M7SFVW-13

DMTH46M7SFVW-13

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

8,560 -
RFQ
DMTH46M7SFVW-13 Datenblatt - 8-PowerVDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 16.3A (Ta), 67.2A (Tc) 10V 7.4mOhm @ 20A, 10V 4V @ 250µA 14.8 nC @ 10 V ±20V 1315 pF @ 20 V - 3.2W (Ta), 54.5W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
S2N7002ET7G

S2N7002ET7G

DIODE

onsemi

7,386 -
RFQ
S2N7002ET7G Datenblatt - - Bulk Obsolete - - - - - - - - - - - - - - - - -
BUK4D122-20PX

BUK4D122-20PX

BUK4D122-20PX

Nexperia USA Inc.

9,250 -
RFQ
BUK4D122-20PX Datenblatt - 6-UDFN Exposed Pad Bulk Obsolete - - - - - - - - - - - - - - - Surface Mount DFN2020MD-6
BUK4D72-30X

BUK4D72-30X

BUK4D72-30X

Nexperia USA Inc.

6,092 -
RFQ
BUK4D72-30X Datenblatt - 6-UDFN Exposed Pad Bulk Obsolete - - - - - - - - - - - - - - - Surface Mount DFN2020MD-6
BUK7510-55AL,127

BUK7510-55AL,127

BUK7510-55AL,127

Nexperia USA Inc.

8,710 -
RFQ
BUK7510-55AL,127 Datenblatt - TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 124 nC @ 10 V ±20V 6280 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
IRF7726TRPBFXTMA1

IRF7726TRPBFXTMA1

MOSFET P-CH 30V 7A MICRO8

Infineon Technologies

7,277 -
RFQ
IRF7726TRPBFXTMA1 Datenblatt HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Discontinued at Digi-Key P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 26mOhm @ 7A, 10V 2.5V @ 250µA 69 nC @ 10 V ±20V 2204 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
STP70NS04ZC

STP70NS04ZC

MOSFET N-CH 33V 80A TO220AB

STMicroelectronics

8,254 -
RFQ
STP70NS04ZC Datenblatt - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 33 V 80A (Tc) 10V 11mOhm @ 40A, 10V 4V @ 1mA 58 nC @ 10 V ±20V 1930 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
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