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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPP80N06S208AKSA2

    IPP80N06S208AKSA2

    MOSFET N-CH 55V 80A TO220-3

    Infineon Technologies

    		 6,518 -
    RFQ
    		IPP80N06S208AKSA2

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IPP80N06S209AKSA2

    IPP80N06S209AKSA2

    MOSFET N-CH 55V 80A TO220-3

    Infineon Technologies

    		 3,742 -
    RFQ
    		IPP80N06S209AKSA2

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IPU60R1K0CEAKMA1

    IPU60R1K0CEAKMA1

    MOSFET N-CH 600V 4.3A TO251-3

    Infineon Technologies

    		 5,157 -
    RFQ
    		IPU60R1K0CEAKMA1

    Datenblatt

         		CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) - 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V - 280 pF @ 100 V - - -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPU60R1K5CEAKMA1

    IPU60R1K5CEAKMA1

    MOSFET N-CH 600V 3.1A TO251-3

    Infineon Technologies

    		 4,559 -
    RFQ
    		IPU60R1K5CEAKMA1

    Datenblatt

         		CoolMOS™ CE TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) - 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V - 200 pF @ 100 V - - -40°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    FDMS9411-F085

    FDMS9411-F085

    MOSFET N-CH 40V 30A POWER56

    onsemi

    		 5,324 -
    RFQ
    		FDMS9411-F085

    Datenblatt

         		PowerTrench® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 10V 7.8mOhm @ 30A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 1100 pF @ 20 V - 68.2W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount Power56
    2SK1518-E

    2SK1518-E

    MOSFET N-CH 500V 20A TO3P

    Renesas Electronics Corporation

    		 2,942 -
    RFQ
    		2SK1518-E

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Ta) 10V 270mOhm @ 10A, 10V - - ±30V 3050 pF @ 10 V - 120W (Tc) 150°C (TJ) - - Through Hole TO-3P
    2SK3430-AZ

    2SK3430-AZ

    MOSFET N-CH 40V 80A TO220AB

    Renesas Electronics Corporation

    		 4,742 -
    RFQ
    		2SK3430-AZ

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4V, 10V 7.3mOhm @ 40A, 10V - 50 nC @ 10 V ±20V 2800 pF @ 10 V - 1.5W (Ta), 84W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    2SK3430-Z-E1-AZ

    2SK3430-Z-E1-AZ

    MOSFET N-CH 40V 80A TO220AB

    Renesas Electronics Corporation

    		 4,882 -
    RFQ
    		2SK3430-Z-E1-AZ

    Datenblatt

         		- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4V, 10V 7.3mOhm @ 40A, 10V - 50 nC @ 10 V ±20V 2800 pF @ 10 V - 1.5W (Ta), 84W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    2SK3431-AZ

    2SK3431-AZ

    MOSFET N-CH 40V 83A TO220AB

    Renesas Electronics Corporation

    		 8,185 -
    RFQ
    		2SK3431-AZ

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 83A (Tc) 4V, 10V 5.6mOhm @ 42A, 10V - 110 nC @ 10 V ±20V 6100 pF @ 10 V - 1.5W (Ta), 100W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    2SK3431-Z-E1-AZ

    2SK3431-Z-E1-AZ

    MOSFET N-CH 40V 83A TO220AB

    Renesas Electronics Corporation

    		 8,280 -
    RFQ
    		2SK3431-Z-E1-AZ

    Datenblatt

         		- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 83A (Tc) 4V, 10V 5.6mOhm @ 42A, 10V - 110 nC @ 10 V ±20V 6100 pF @ 10 V - 1.5W (Ta), 100W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    H7N1002LS-E

    H7N1002LS-E

    MOSFET N-CH 100V 75A 4LDPAK

    Renesas Electronics Corporation

    		 6,844 -
    RFQ
    		H7N1002LS-E

    Datenblatt

         		- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Ta) 4.5V, 10V 10mOhm @ 37.5A, 10V - 155 nC @ 10 V ±20V 9700 pF @ 10 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
    H7N1002LSTL-E

    H7N1002LSTL-E

    MOSFET N-CH 100V 75A 4LDPAK

    Renesas Electronics Corporation

    		 7,380 -
    RFQ
    		H7N1002LSTL-E

    Datenblatt

         		- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Ta) 4.5V, 10V 10mOhm @ 37.5A, 10V - 155 nC @ 10 V ±20V 9700 pF @ 10 V - 100W (Tc) 150°C (TJ) - - Surface Mount LDPAK
    HAT2131R-EL-E

    HAT2131R-EL-E

    MOSFET N-CH 350V 900MA 8SOP

    Renesas Electronics Corporation

    		 6,368 -
    RFQ
    		HAT2131R-EL-E

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 350 V 900mA (Ta) 4V, 10V 3Ohm @ 450mA, 10V - 20 nC @ 10 V ±20V 460 pF @ 25 V - 2.5W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    HAT2287WP-EL-E

    HAT2287WP-EL-E

    MOSFET N-CH 200V 17A 8WPAK

    Renesas Electronics Corporation

    		 7,700 -
    RFQ
    		HAT2287WP-EL-E

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Ta) 10V 94mOhm @ 8.5A, 10V - 26 nC @ 10 V ±30V 1200 pF @ 25 V - 30W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK (3)
    HAT2299WP-EL-E

    HAT2299WP-EL-E

    MOSFET N-CH 150V 14A 8WPAK

    Renesas Electronics Corporation

    		 9,397 -
    RFQ
    		HAT2299WP-EL-E

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 14A (Ta) 10V 110mOhm @ 7A, 10V - 15 nC @ 10 V ±30V 710 pF @ 25 V - 25W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK (3)
    N0439N-S19-AY

    N0439N-S19-AY

    MOSFET N-CH 40V 90A TO220

    Renesas Electronics Corporation

    		 5,885 -
    RFQ
    		N0439N-S19-AY

    Datenblatt

         		- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.3mOhm @ 45A, 10V 4V @ 250µA 102 nC @ 10 V ±20V 5850 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C (TJ) - - Through Hole TO-220
    RJK0355DSP-01#J0

    RJK0355DSP-01#J0

    MOSFET N-CH 30V 12A 8SOP

    Renesas Electronics Corporation

    		 7,236 -
    RFQ
    		RJK0355DSP-01#J0

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 11.1mOhm @ 6A, 10V - 6 nC @ 4.5 V ±20V 860 pF @ 10 V - 1.8W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    RJK6014DPK-00#T0

    RJK6014DPK-00#T0

    MOSFET N-CH 600V 16A TO3P

    Renesas Electronics Corporation

    		 8,524 -
    RFQ
    		RJK6014DPK-00#T0

    Datenblatt

         		- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Ta) 10V 575mOhm @ 8A, 10V - 45 nC @ 10 V ±30V 1800 pF @ 25 V - 150W (Tc) 150°C (TJ) - - Through Hole TO-3P
    RQK0607AQDQS#H1

    RQK0607AQDQS#H1

    MOSFET N-CH 60V 2.4A UPAK

    Renesas Electronics Corporation

    		 2,915 -
    RFQ
    		RQK0607AQDQS#H1

    Datenblatt

         		- TO-243AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.4A (Ta) 2.5V, 4.5V 270mOhm @ 1.2A, 4.5V - 2 nC @ 4.5 V ±12V 170 pF @ 10 V - 1.5W (Ta) 150°C (TJ) - - Surface Mount UPAK
    UPA2812T1L-E1-AT

    UPA2812T1L-E1-AT

    MOSFET P-CH 30V 30A 8HVSON

    Renesas Electronics Corporation

    		 3,001 -
    RFQ
    		UPA2812T1L-E1-AT

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 4.8mOhm @ 30A, 10V - 100 nC @ 10 V ±20V 3740 pF @ 10 V - 1.5W (Ta), 52W (Tc) 150°C (TJ) - - Surface Mount 8-HVSON (3.3x3.3)
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