FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
R6030ENZ1C9

R6030ENZ1C9

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor

2,962 -
RFQ
R6030ENZ1C9

Datenblatt

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±20V 2100 pF @ 25 V - 120W (Tc) 150°C (TJ) - - Through Hole TO-247
R6035ENZ1C9

R6035ENZ1C9

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor

4,605 -
RFQ
R6035ENZ1C9

Datenblatt

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 4V @ 1mA 110 nC @ 10 V ±20V 2720 pF @ 25 V - 120W (Tc) 150°C (TJ) - - Through Hole TO-247
R6047ENZ1C9

R6047ENZ1C9

MOSFET N-CH 600V 47A TO247

Rohm Semiconductor

4,143 -
RFQ
R6047ENZ1C9

Datenblatt

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 72mOhm @ 25.8A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 3850 pF @ 25 V - 120W (Tc) 150°C (TJ) - - Through Hole TO-247
R6076ENZ1C9

R6076ENZ1C9

MOSFET N-CH 600V 76A TO247

Rohm Semiconductor

4,899 -
RFQ
R6076ENZ1C9

Datenblatt

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 42mOhm @ 44.4A, 10V 4V @ 1mA 260 nC @ 10 V ±20V 6500 pF @ 25 V - 120W (Tc) 150°C (TJ) - - Through Hole TO-247
FCU850N80Z

FCU850N80Z

MOSFET N-CH 800V 6A IPAK

onsemi

2,065 -
RFQ
FCU850N80Z

Datenblatt

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
FQP2P40-F080

FQP2P40-F080

MOSFET P-CH 400V 2A TO220-3

onsemi

9,629 -
RFQ
FQP2P40-F080

Datenblatt

QFET® TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 6.5Ohm @ 1A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 350 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
HTNFET-DC

HTNFET-DC

MOSFET N-CH 55V 8-DIP

Honeywell Aerospace

7,953 -
RFQ
HTNFET-DC

Datenblatt

HTMOS™ 8-CDIP Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 55 V - 5V 400mOhm @ 100mA, 5V 2.4V @ 100µA 4.3 nC @ 5 V 10V 290 pF @ 28 V - 50W (Tj) - - - Through Hole -
HTNFET-TC

HTNFET-TC

MOSFET N-CH 55V 4-PIN

Honeywell Aerospace

8,876 -
RFQ
HTNFET-TC

Datenblatt

HTMOS™ - Bulk Active N-Channel MOSFET (Metal Oxide) 55 V - 5V 400mOhm @ 100mA, 5V 2.4V @ 100µA 4.3 nC @ 5 V 10V 290 pF @ 28 V - 50W (Tj) - - - Through Hole -
XR46000ESETR

XR46000ESETR

MOSFET N-CH 600V 1.5A SOT223

MaxLinear, Inc.

2,520 -
RFQ
XR46000ESETR

Datenblatt

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.5A (Tc) 10V 8Ohm @ 750mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±30V 170 pF @ 25 V - 20W (Tc) 150°C (TJ) - - Surface Mount SOT-223-3
FCU2250N80Z

FCU2250N80Z

MOSFET N-CH 800V 2.6A IPAK

onsemi

7,976 -
RFQ
FCU2250N80Z

Datenblatt

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
FCU4300N80Z

FCU4300N80Z

MOSFET N-CH 800V 1.6A IPAK

onsemi

6,319 -
RFQ
FCU4300N80Z

Datenblatt

SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Tc) 10V 4.3Ohm @ 800mA, 10V 4.5V @ 160µA 8.8 nC @ 10 V ±20V 355 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
NDDP010N25AZ-1H

NDDP010N25AZ-1H

MOSFET N-CH 250V 10A IPAK/TP

onsemi

5,668 -
RFQ
NDDP010N25AZ-1H

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Bag Obsolete N-Channel MOSFET (Metal Oxide) 250 V 10A (Ta) 10V 420mOhm @ 5A, 10V 4.5V @ 1mA 16 nC @ 10 V ±30V 980 pF @ 20 V - 1W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK/TP
FDD9410-F085

FDD9410-F085

MOSFET N-CH 40V 50A DPAK

onsemi

7,381 -
RFQ
FDD9410-F085

Datenblatt

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 4.1mOhm @ 50A, 10V 4V @ 250µA 34.5 nC @ 10 V ±20V 1715 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
AUIRF1405ZS-7P

AUIRF1405ZS-7P

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies

9,903 -
RFQ
AUIRF1405ZS-7P

Datenblatt

HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
IRFH7194TRPBF

IRFH7194TRPBF

MOSFET N-CH 100V 11A/35A 8PQFN

Infineon Technologies

9,374 -
RFQ
IRFH7194TRPBF

Datenblatt

FASTIRFET™, HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 35A (Tc) 10V 16.4mOhm @ 21A, 10V 3.6V @ 50µA 19 nC @ 10 V ±20V 733 pF @ 50 V - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IRFI7440GPBF

IRFI7440GPBF

MOSFET N-CH 40V 95A TO220AB FP

Infineon Technologies

7,163 -
RFQ
IRFI7440GPBF

Datenblatt

HEXFET®, StrongIRFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 2.5mOhm @ 57A, 10V 3.9V @ 100µA 132 nC @ 10 V ±20V 4549 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB Full-Pak
PSMN7R6-60XSQ

PSMN7R6-60XSQ

MOSFET N-CH 60V 51.5A TO220F

NXP USA Inc.

5,690 -
RFQ

-

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 51.5A (Tc) 10V 7.8mOhm @ 25A, 10V 4.6V @ 1mA 38.7 nC @ 10 V ±20V 2651 pF @ 30 V - 46W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
AO4266

AO4266

MOSFET N-CH 60V 10A 8SO

Alpha & Omega Semiconductor Inc.

4,962 -
RFQ

-

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1340 pF @ 30 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
AO4568

AO4568

MOSFET N-CH 30V 12A 8SOIC

Alpha & Omega Semiconductor Inc.

5,741 -
RFQ

-

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 11.5mOhm @ 12A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 600 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
AO6424A

AO6424A

MOSFET N-CH 30V 6.5A 6TSOP

Alpha & Omega Semiconductor Inc.

3,818 -
RFQ
AO6424A

Datenblatt

- SC-74, SOT-457 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 35mOhm @ 5A, 10V 2.4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
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