FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
SIB411DK-T1-GE3

SIB411DK-T1-GE3

MOSFET P-CH 20V 9A PPAK SC75-6

Vishay Siliconix

4,329 -
RFQ

-

TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9A (Tc) 1.8V, 4.5V 66mOhm @ 3.3A, 4.5V 1V @ 250µA 15 nC @ 8 V ±8V 470 pF @ 10 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SC-75-6
SIE726DF-T1-GE3

SIE726DF-T1-GE3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix

6,317 -
RFQ

-

SkyFET®, TrenchFET® 10-PolarPAK® (L) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V 3V @ 250µA 160 nC @ 10 V ±20V 7400 pF @ 15 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (L)
SIE800DF-T1-GE3

SIE800DF-T1-GE3

MOSFET N-CH 30V 50A 10POLARPAK

Vishay Siliconix

8,600 -
RFQ
SIE800DF-T1-GE3

Datenblatt

TrenchFET® 10-PolarPAK® (S) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.2mOhm @ 11A, 10V 3V @ 250µA 35 nC @ 10 V ±20V 1600 pF @ 15 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (S)
SIE804DF-T1-GE3

SIE804DF-T1-GE3

MOSFET N-CH 150V 37A 10POLARPAK

Vishay Siliconix

6,047 -
RFQ

-

TrenchFET® 10-PolarPAK® (LH) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150 V 37A (Tc) 6V, 10V 38mOhm @ 7.6A, 10V 3V @ 250µA 105 nC @ 10 V ±20V 3000 pF @ 50 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (LH)
SIE844DF-T1-GE3

SIE844DF-T1-GE3

MOSFET N-CH 30V 44.5A 10POLARPAK

Vishay Siliconix

2,437 -
RFQ

-

TrenchFET® 10-PolarPAK® (U) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44.5A (Tc) 4.5V, 10V 7mOhm @ 12.1A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 2150 pF @ 15 V - 5.2W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (U)
SIE848DF-T1-E3

SIE848DF-T1-E3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix

8,045 -
RFQ

-

TrenchFET® 10-PolarPAK® (L) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.6mOhm @ 25A, 10V 2.5V @ 250µA 138 nC @ 10 V ±20V 6100 pF @ 15 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (L)
SIE854DF-T1-E3

SIE854DF-T1-E3

MOSFET N-CH 100V 60A 10POLARPAK

Vishay Siliconix

6,915 -
RFQ
SIE854DF-T1-E3

Datenblatt

TrenchFET® 10-PolarPAK® (L) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 14.2mOhm @ 13.2A, 10V 4.4V @ 250µA 75 nC @ 10 V ±20V 3100 pF @ 50 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (L)
SIE876DF-T1-GE3

SIE876DF-T1-GE3

MOSFET N-CH 60V 60A 10POLARPAK

Vishay Siliconix

8,438 -
RFQ

-

TrenchFET® 10-PolarPAK® (L) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 6.1mOhm @ 20A, 10V 4.4V @ 250µA 77 nC @ 10 V ±20V 3100 pF @ 30 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (L)
SIHF8N50L-E3

SIHF8N50L-E3

MOSFET N-CH 500V 8A TO220

Vishay Siliconix

3,447 -
RFQ
SIHF8N50L-E3

Datenblatt

- TO-220-3 Full Pack Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 1Ohm @ 4A, 10V 5V @ 250µA 34 nC @ 0 V ±30V 873 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIJ400DP-T1-GE3

SIJ400DP-T1-GE3

MOSFET N-CH 30V 32A PPAK SO-8

Vishay Siliconix

5,921 -
RFQ

-

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 32A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 7765 pF @ 15 V - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIJ484DP-T1-GE3

SIJ484DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix

9,265 -
RFQ
SIJ484DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6.3mOhm @ 10A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1600 pF @ 15 V - 5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIJ800DP-T1-GE3

SIJ800DP-T1-GE3

MOSFET N-CH 40V 20A PPAK SO-8

Vishay Siliconix

2,560 -
RFQ

-

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Tc) 4.5V, 10V 9.5mOhm @ 20A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 2400 pF @ 20 V - 4.2W (Ta), 35.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR168DP-T1-GE3

SIR168DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix

7,009 -
RFQ

-

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 4.4mOhm @ 15A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 2040 pF @ 15 V - 5W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR406DP-T1-GE3

SIR406DP-T1-GE3

MOSFET N-CH 25V 40A PPAK SO-8

Vishay Siliconix

9,365 -
RFQ
SIR406DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 4.5V, 10V 3.8mOhm @ 15A, 10V 2.4V @ 250µA 50 nC @ 10 V ±20V 2083 pF @ 10 V - 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR432DP-T1-GE3

SIR432DP-T1-GE3

MOSFET N-CH 100V 28.4A PPAK SO-8

Vishay Siliconix

7,796 -
RFQ
SIR432DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28.4A (Tc) 7.5V, 10V 30.6mOhm @ 8.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1170 pF @ 50 V - 5W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR436DP-T1-GE3

SIR436DP-T1-GE3

MOSFET N-CH 25V 40A PPAK SO-8

Vishay Siliconix

8,889 -
RFQ
SIR436DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 40A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 3V @ 250µA 47 nC @ 10 V ±20V 1715 pF @ 15 V - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR494DP-T1-GE3

SIR494DP-T1-GE3

MOSFET N-CH 12V 60A PPAK SO-8

Vishay Siliconix

3,054 -
RFQ
SIR494DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 60A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 6900 pF @ 6 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR874DP-T1-GE3

SIR874DP-T1-GE3

MOSFET N-CH 25V 20A PPAK SO-8

Vishay Siliconix

2,605 -
RFQ
SIR874DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 20A (Tc) 4.5V, 10V 9.4mOhm @ 10A, 10V 2.2V @ 250µA 27 nC @ 10 V ±20V 985 pF @ 15 V - 3.9W (Ta), 29.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SQ2319ES-T1-GE3

SQ2319ES-T1-GE3

MOSFET P-CH 40V 4.6A TO-236

Vishay Siliconix

9,864 -
RFQ
SQ2319ES-T1-GE3

Datenblatt

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Obsolete P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Tc) - 75mOhm @ 3A, 10V 2.5V @ 250µA 16 nC @ 10 V - 620 pF @ 25 V - - - - - Surface Mount SOT-23-3 (TO-236)
SQ7002K-T1-GE3

SQ7002K-T1-GE3

MOSFET N-CH 60V 320MA SOT23-3

Vishay Siliconix

7,504 -
RFQ
SQ7002K-T1-GE3

Datenblatt

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 320mA (Tc) 4.5V, 10V 1.3Ohm @ 500mA, 10V 2.5V @ 250µA 1.4 nC @ 4.5 V ±20V 24 pF @ 30 V - 500mW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
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