FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
APT4F120K

APT4F120K

MOSFET N-CH 1200V 4A TO220

Microchip Technology

4,309 -
RFQ
APT4F120K

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 4A (Tc) 10V 4.6Ohm @ 2A, 10V 5V @ 500µA 43 nC @ 10 V ±30V 1385 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
APT4M120K

APT4M120K

MOSFET N-CH 1200V 5A TO220

Microchip Technology

6,233 -
RFQ

-

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 5A (Tc) 10V 4Ohm @ 2A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 1385 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 [K]
APT50M65B2LLG

APT50M65B2LLG

MOSFET N-CH 500V 67A T-MAX

Microsemi Corporation

8,239 -
RFQ
APT50M65B2LLG

Datenblatt

POWER MOS 7® TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 500 V 67A (Tc) 10V 65mOhm @ 33.5A, 10V 5V @ 2.5mA 141 nC @ 10 V ±30V 7010 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Through Hole T-MAX™ [B2]
APT5F100K

APT5F100K

MOSFET N-CH 1000V 5A TO220

Microsemi Corporation

4,495 -
RFQ
APT5F100K

Datenblatt

POWER MOS 8™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 5A (Tc) 10V 2.8Ohm @ 3A, 10V 5V @ 500µA 43 nC @ 10 V ±30V 1409 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 [K]
APT6M100K

APT6M100K

MOSFET N-CH 1000V 6A TO220

Microsemi Corporation

3,761 -
RFQ
APT6M100K

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) 10V 2.5Ohm @ 3A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 1410 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 [K]
APT7F80K

APT7F80K

MOSFET N-CH 800V 7A TO220

Microsemi Corporation

3,321 -
RFQ
APT7F80K

Datenblatt

POWER MOS 8™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 1.5Ohm @ 4A, 10V 5V @ 500µA 43 nC @ 10 V ±30V 1335 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 [K]
APT8M80K

APT8M80K

MOSFET N-CH 800V 8A TO220

Microsemi Corporation

3,321 -
RFQ
APT8M80K

Datenblatt

POWER MOS 8™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.35Ohm @ 4A, 10V 5V @ 500µA 43 nC @ 10 V ±30V 1335 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 [K]
APT94N60L2C3G

APT94N60L2C3G

MOSFET N-CH 600V 94A 264 MAX

Microchip Technology

4,641 -
RFQ
APT94N60L2C3G

Datenblatt

- TO-264-3, TO-264AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 94A (Tc) 10V 35mOhm @ 60A, 10V 3.9V @ 5.4mA 640 nC @ 10 V ±20V 13600 pF @ 25 V - 833W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 264 MAX™ [L2]
IRFR2607ZPBF

IRFR2607ZPBF

MOSFET N-CH 75V 42A DPAK

Infineon Technologies

3,244 -
RFQ
IRFR2607ZPBF

Datenblatt

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-901|DPAK
HAT2175H-EL-E

HAT2175H-EL-E

MOSFET N-CH 100V 15A LFPAK

Renesas Electronics Corporation

8,298 -
RFQ
HAT2175H-EL-E

Datenblatt

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta) 8V, 10V 42mOhm @ 7.5A, 10V - 21 nC @ 10 V ±20V 1445 pF @ 10 V - 15W (Tc) 150°C (TJ) - - Surface Mount LFPAK
HAT2197R-EL-E

HAT2197R-EL-E

MOSFET N-CH 30V 16A 8SOP

Renesas Electronics Corporation

5,758 -
RFQ
HAT2197R-EL-E

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 6.7mOhm @ 8A, 10V - 18 nC @ 4.5 V ±20V 2650 pF @ 10 V - 2.5W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
FDPF16N50

FDPF16N50

MOSFET N-CH 500V 16A TO220F

onsemi

9,896 -
RFQ
FDPF16N50

Datenblatt

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 380mOhm @ 8A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDPF20N50

FDPF20N50

MOSFET N-CH 500V 20A TO220F

onsemi

6,206 -
RFQ
FDPF20N50

Datenblatt

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 230mOhm @ 10A, 10V 5V @ 250µA 59.5 nC @ 10 V ±30V 3120 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDPF7N50U

FDPF7N50U

MOSFET N-CH 500V 5A TO220F

onsemi

7,343 -
RFQ
FDPF7N50U

Datenblatt

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 940 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDZ193P

FDZ193P

MOSFET P-CH 20V 3A 6WLCSP

onsemi

8,098 -
RFQ
FDZ193P

Datenblatt

PowerTrench® 6-UFBGA, WLCSP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.7V, 4.5V 90mOhm @ 1A, 4.5V 1.5V @ 250µA 10 nC @ 10 V ±12V 660 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WLCSP (1x1.5)
IXFV52N30P

IXFV52N30P

MOSFET N-CH 300V 52A PLUS220

IXYS

8,460 -
RFQ
IXFV52N30P

Datenblatt

PolarHT™ HiPerFET™ TO-220-3, Short Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 66mOhm @ 500mA, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS220
FDPF12N35

FDPF12N35

MOSFET N-CH 350V 12A TO220F

onsemi

8,007 -
RFQ
FDPF12N35

Datenblatt

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 350 V 12A (Tc) 10V 380mOhm @ 6A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1110 pF @ 25 V - 31.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDZ291P

FDZ291P

MOSFET P-CH 20V 4.6A 9BGA

onsemi

4,658 -
RFQ
FDZ291P

Datenblatt

PowerTrench® 9-VFBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 1.5V, 4.5V 40mOhm @ 4.6A, 4.5V 1V @ 250µA 13 nC @ 4.5 V ±8V 1010 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 9-BGA (1.5x1.6)
FQPF6N80CT

FQPF6N80CT

MOSFET N-CH 800V 5.5A TO220F

onsemi

5,266 -
RFQ
FQPF6N80CT

Datenblatt

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 2.5Ohm @ 2.75A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1310 pF @ 25 V - 51W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
STW30NF20

STW30NF20

MOSFET N-CH 200V 30A TO247-3

STMicroelectronics

2,358 -
RFQ
STW30NF20

Datenblatt

STripFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 75mOhm @ 15A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 1597 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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