Dioden-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodenkonfiguration Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Betriebstemperatur - Sperrschicht Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Dioden-Arrays

TomatoElec liefert Dioden-Arrays für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete Dioden-Array-Produkte für Gleichrichtungs-, Schalt-, Signalführungs- und Schutzschaltungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von Dioden-Arrays und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Dioden-Arrays, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodenkonfiguration Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Betriebstemperatur - Sperrschicht Klasse Qualifizierung Montageart Lieferant Gerätepaket
MBR600150CT

MBR600150CT

DIODE MOD SCHOT 150V 300A 2TOWER

GeneSiC Semiconductor

6,184 -
RFQ
MBR600150CT

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 150 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR600150CTR

MBR600150CTR

DIODE MOD SCHOT 150V 300A 2TOWER

GeneSiC Semiconductor

6,944 -
RFQ
MBR600150CTR

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 150 V 300A 880 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR600200CT

MBR600200CT

DIODE MOD SCHOT 200V 300A 2TOWER

GeneSiC Semiconductor

6,168 -
RFQ
MBR600200CT

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 200 V 300A 920 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR600200CTR

MBR600200CTR

DIODE MOD SCHOT 200V 300A 2TOWER

GeneSiC Semiconductor

8,008 -
RFQ
MBR600200CTR

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 200 V 300A 920 mV @ 300 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -55°C ~ 150°C - - Chassis Mount Twin Tower
2954882

2954882

DIODE MOD GP 1000V 300MA MOD

Phoenix Contact

3,537 -
RFQ
2954882

Datenblatt

- Module Bulk Active 8 Common Anode Standard 1000 V 300mA - Standard Recovery >500ns, > 200mA (Io) - - -20°C ~ 50°C - - DIN Rail/Channel Module
2954879

2954879

DIODE MOD GP 1000V 300MA MOD

Phoenix Contact

7,662 -
RFQ
2954879

Datenblatt

- Module Bulk Active 8 Common Cathode Standard 1000 V 300mA - Standard Recovery >500ns, > 200mA (Io) - - -20°C ~ 50°C - - DIN Rail/Channel Module
JAN1N6843CCU3

JAN1N6843CCU3

DIODE ARRAY SCHOTTKY 100V 15A U3

Microchip Technology

9,699 -
RFQ
JAN1N6843CCU3

Datenblatt

- 3-SMD, No Lead Bulk Active 1 Pair Common Cathode Schottky 100 V 15A 1.27 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 100 V -65°C ~ 150°C Military MIL-PRF-19500/578 Surface Mount U3 (SMD-0.5)
F1827RD600

F1827RD600

DIODE MODULE GP 600V 25A MODULE

Sensata-Crydom

7,508 -
RFQ
F1827RD600

Datenblatt

- Module Bulk Not For New Designs 1 Pair Series Connection Standard 600 V 25A (DC) 1.55 V @ 75 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
MURT40040

MURT40040

DIODE MODULE GP 400V 200A 3TOWER

GeneSiC Semiconductor

6,444 -
RFQ
MURT40040

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 200A 1.35 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MUR40010CT

MUR40010CT

DIODE MODULE GP 100V 200A 2TOWER

GeneSiC Semiconductor

7,698 -
RFQ
MUR40010CT

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 100 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V - - - Chassis Mount Twin Tower
MUR40010CTR

MUR40010CTR

DIODE MODULE GP 100V 200A 2TOWER

GeneSiC Semiconductor

9,157 -
RFQ
MUR40010CTR

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Anode Standard 100 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40020CT

MUR40020CT

DIODE MODULE GP 200V 200A 2TOWER

GeneSiC Semiconductor

4,692 -
RFQ
MUR40020CT

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 200 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40020CTR

MUR40020CTR

DIODE MODULE GP 200V 200A 2TOWER

GeneSiC Semiconductor

9,990 -
RFQ
MUR40020CTR

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Anode Standard 200 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40040CT

MUR40040CT

DIODE MODULE GP 400V 200A 2TOWER

GeneSiC Semiconductor

9,872 -
RFQ
MUR40040CT

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 400 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40040CTR

MUR40040CTR

DIODE MODULE GP 400V 200A 2TOWER

GeneSiC Semiconductor

9,392 -
RFQ
MUR40040CTR

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Anode Standard 400 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40060CT

MUR40060CT

DIODE MODULE GP 600V 200A 2TOWER

GeneSiC Semiconductor

7,346 -
RFQ
MUR40060CT

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 600 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MUR40060CTR

MUR40060CTR

DIODE MODULE GP 600V 200A 2TOWER

GeneSiC Semiconductor

6,552 -
RFQ
MUR40060CTR

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Anode Standard 600 V 200A 1.3 V @ 125 A Fast Recovery =< 500ns, > 200mA (Io) 180 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MURT40010

MURT40010

DIODE MODULE GP 100V 200A 3TOWER

GeneSiC Semiconductor

8,723 -
RFQ
MURT40010

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 100 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT40010R

MURT40010R

DIODE MODULE GP 100V 200A 3TOWER

GeneSiC Semiconductor

5,958 -
RFQ
MURT40010R

Datenblatt

- Three Tower Bulk Active 1 Pair Common Anode Standard 100 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT40020

MURT40020

DIODE MODULE GP 200V 200A 3TOWER

GeneSiC Semiconductor

9,622 -
RFQ
MURT40020

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 200A 1.3 V @ 200 A Fast Recovery =< 500ns, > 200mA (Io) 125 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
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