Dioden-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodenkonfiguration Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Betriebstemperatur - Sperrschicht Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Dioden-Arrays

TomatoElec liefert Dioden-Arrays für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete Dioden-Array-Produkte für Gleichrichtungs-, Schalt-, Signalführungs- und Schutzschaltungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von Dioden-Arrays und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Dioden-Arrays, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodenkonfiguration Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Betriebstemperatur - Sperrschicht Klasse Qualifizierung Montageart Lieferant Gerätepaket
MSRTA400100A

MSRTA400100A

DIODE MOD GP 1000V 400A 3TOWER

GeneSiC Semiconductor

4,542 -
RFQ
MSRTA400100A

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 1000 V 400A (DC) 1.2 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRTA400120A

MSRTA400120A

DIODE MOD GP 1200V 400A 3TOWER

GeneSiC Semiconductor

8,600 -
RFQ
MSRTA400120A

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 1200 V 400A (DC) 1.2 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRTA400140A

MSRTA400140A

DIODE MOD GP 1400V 400A 3TOWER

GeneSiC Semiconductor

3,375 -
RFQ
MSRTA400140A

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 1400 V 400A (DC) 1.2 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRTA400160A

MSRTA400160A

DIODE MOD GP 1600V 400A 3TOWER

GeneSiC Semiconductor

5,075 -
RFQ
MSRTA400160A

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 1600 V 400A (DC) 1.2 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRTA40060A

MSRTA40060A

DIODE MODULE GP 600V 400A 3TOWER

GeneSiC Semiconductor

5,249 -
RFQ
MSRTA40060A

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 400A (DC) 1.2 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MSRTA40080A

MSRTA40080A

DIODE MODULE GP 800V 400A 3TOWER

GeneSiC Semiconductor

9,022 -
RFQ
MSRTA40080A

Datenblatt

- Three Tower Bulk Active 1 Pair Common Cathode Standard 800 V 400A (DC) 1.2 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
VS-VSKD236/08PBF

VS-VSKD236/08PBF

DIODE MOD GP 800V 115A MAGNAPAK

Vishay General Semiconductor - Diodes Division

3,364 -
RFQ
VS-VSKD236/08PBF

Datenblatt

- 3-MAGN-A-PAK™ Bulk Active 1 Pair Common Cathode Standard 800 V 115A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 800 V -40°C ~ 150°C - - Chassis Mount MAGN-A-PAK®
VS-VSKJ236/16PBF

VS-VSKJ236/16PBF

DIODE MOD GP 1600V 115A INTAPAK

Vishay General Semiconductor - Diodes Division

3,752 -
RFQ
VS-VSKJ236/16PBF

Datenblatt

- INT-A-PAK (3) Bulk Active 1 Pair Common Anode Standard 1600 V 115A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount INT-A-PAK
DKA300AA60

DKA300AA60

DIODE MODULE GEN PURP 600V 150A

SanRex Corporation

6,671 -
RFQ
DKA300AA60

Datenblatt

- Module Active 1 Pair Common Cathode Standard 600 V 150A 1.3 V @ 150 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 150 mA @ 600 V -40°C ~ 150°C - - Chassis Mount -
DD200KB80

DD200KB80

DIODE MODULE GEN PURP 800V 200A

SanRex Corporation

4,101 -
RFQ
DD200KB80

Datenblatt

- Module Active 1 Pair Series Connection Standard 800 V 200A 1.3 V @ 620 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 800 V -40°C ~ 150°C - - Chassis Mount -
MBR2X160A080

MBR2X160A080

DIODE MOD SCHOTT 80V 160A SOT227

GeneSiC Semiconductor

6,490 -
RFQ
MBR2X160A080

Datenblatt

- SOT-227-4, miniBLOC Bulk Active 2 Independent Schottky 80 V 160A 840 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C - - Chassis Mount SOT-227
MBR2X160A100

MBR2X160A100

DIODE MOD SCHOT 100V 160A SOT227

GeneSiC Semiconductor

2,147 -
RFQ
MBR2X160A100

Datenblatt

- SOT-227-4, miniBLOC Bulk Active 2 Independent Schottky 100 V 160A 840 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V -40°C ~ 150°C - - Chassis Mount SOT-227
MBR2X160A120

MBR2X160A120

DIODE MOD SCHOT 120V 160A SOT227

GeneSiC Semiconductor

5,265 -
RFQ
MBR2X160A120

Datenblatt

- SOT-227-4, miniBLOC Bulk Active 2 Independent Schottky 120 V 160A 880 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C - - Chassis Mount SOT-227
MBR2X160A150

MBR2X160A150

DIODE MOD SCHOT 150V 160A SOT227

GeneSiC Semiconductor

9,885 -
RFQ
MBR2X160A150

Datenblatt

- SOT-227-4, miniBLOC Bulk Active 2 Independent Schottky 150 V 160A 880 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C - - Chassis Mount SOT-227
MBR2X160A180

MBR2X160A180

DIODE MOD SCHOT 180V 160A SOT227

GeneSiC Semiconductor

7,630 -
RFQ
MBR2X160A180

Datenblatt

- SOT-227-4, miniBLOC Bulk Active 2 Independent Schottky 180 V 160A 920 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C - - Chassis Mount SOT-227
MBR2X160A200

MBR2X160A200

DIODE MOD SCHOT 200V 160A SOT227

GeneSiC Semiconductor

6,497 -
RFQ
MBR2X160A200

Datenblatt

- SOT-227-4, miniBLOC Bulk Active 2 Independent Schottky 200 V 160A 920 mV @ 160 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C - - Chassis Mount SOT-227
CD611816C

CD611816C

DIODE MOD GP 1800V 160A MOD

Powerex Inc.

7,597 -
RFQ
CD611816C

Datenblatt

- Module Bulk Discontinued at Digi-Key 1 Pair Series Connection Standard 1800 V 160A - Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 1800 V - - - Chassis Mount Module
VS-VSKC196/12PBF

VS-VSKC196/12PBF

DIODE MOD GP 1200V 97.5A INTAPAK

Vishay General Semiconductor - Diodes Division

8,491 -
RFQ
VS-VSKC196/12PBF

Datenblatt

- INT-A-Pak Bulk Active 1 Pair Common Cathode Standard 1200 V 97.5A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V -55°C ~ 175°C - - Chassis Mount INT-A-PAK
VS-VSKC236/12PBF

VS-VSKC236/12PBF

DIODE MOD GP 1200V 115A INTAPAK

Vishay General Semiconductor - Diodes Division

9,666 -
RFQ
VS-VSKC236/12PBF

Datenblatt

- INT-A-Pak Bulk Active 1 Pair Common Cathode Standard 1200 V 115A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V -55°C ~ 175°C - - Chassis Mount INT-A-PAK
VS-VSKD196/12PBF

VS-VSKD196/12PBF

DIODE MOD GP 1200V 97.5A INTAPAK

Vishay General Semiconductor - Diodes Division

4,855 -
RFQ
VS-VSKD196/12PBF

Datenblatt

- INT-A-Pak Bulk Active 1 Pair Common Cathode Standard 1200 V 97.5A - Standard Recovery >500ns, > 200mA (Io) - 20 mA @ 1200 V -40°C ~ 150°C - - Chassis Mount INT-A-PAK
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