Dioden-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Diodenkonfiguration Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Betriebstemperatur - Sperrschicht Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Dioden-Arrays

TomatoElec liefert Dioden-Arrays für Industrie, Automotive, Kommunikation, Stromversorgung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete Dioden-Array-Produkte für Gleichrichtungs-, Schalt-, Signalführungs- und Schutzschaltungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von Dioden-Arrays und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Dioden-Arrays, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Diodenkonfiguration Technologie Spannung - Gleichstromsperrspannung (Vr) (Max) Strom - Durchschnittlich gleichgerichtet (Io) (pro Diode) Spannung - Vorwärtsspannung (Vf) (Max) @ If Geschwindigkeit Sperrerholungszeit (trr) Strom - Sperrleck @ Vr Betriebstemperatur - Sperrschicht Klasse Qualifizierung Montageart Lieferant Gerätepaket
PCDH40120CCG1_T0_00601

PCDH40120CCG1_T0_00601

DIODE ARR SIC 1200V 20A TO-247AD

Panjit International Inc.

1,500 -
RFQ
PCDH40120CCG1_T0_00601

Datenblatt

- TO-247-3 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 1200 V 20A (DC) 1.7 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 1200 V -55°C ~ 175°C - - Through Hole TO-247AD
IV1D12040U2

IV1D12040U2

DIODE ARR SIC 1200V 102A TO2472

Inventchip

120 -
RFQ
IV1D12040U2

Datenblatt

- TO-247-2 Tube Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 1200 V 102A (DC) 1.8 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V -55°C ~ 175°C - - Through Hole TO-247-2
1N4148UBCA/TR

1N4148UBCA/TR

DIODE ARRAY GP 75V 200MA UB

Microchip Technology

200 -
RFQ
1N4148UBCA/TR

Datenblatt

- 3-SMD, No Lead Tape & Reel (TR) Active 1 Pair Common Anode Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V -65°C ~ 200°C - - Surface Mount UB
1N4148UBD

1N4148UBD

DIODE ARRAY GP 75V 200MA UB

Microchip Technology

151 -
RFQ
1N4148UBD

Datenblatt

- 3-SMD, No Lead Bulk Active 1 Pair Series Connection Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V -65°C ~ 200°C - - Surface Mount UB
RJS6004WDPK-00#T0

RJS6004WDPK-00#T0

DIODE ARRAY SIC 600V 10A TO-3P

Renesas Electronics Corporation

750 -
RFQ
RJS6004WDPK-00#T0

Datenblatt

- TO-220-3 Full Pack Bulk Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 600 V 10A (DC) 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 15 ns 10 µA @ 600 V -55°C ~ 150°C - - Through Hole TO-3P
GB2X50MPS12-227

GB2X50MPS12-227

DIODE MOD SIC 1200V 93A SOT-227

GeneSiC Semiconductor

248 -
RFQ
GB2X50MPS12-227

Datenblatt

SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 93A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V -55°C ~ 175°C - - Chassis Mount SOT-227
DCG45X1200NA

DCG45X1200NA

DIODE MOD SIC 1200V 22A SOT227B

IXYS

196 -
RFQ
DCG45X1200NA

Datenblatt

- SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 22A 1.8 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 1200 V -40°C ~ 175°C - - Chassis Mount SOT-227B
GB2X50MPS17-227

GB2X50MPS17-227

DIODE MOD SIC 1700V 136A SOT-227

GeneSiC Semiconductor

79 -
RFQ
GB2X50MPS17-227

Datenblatt

SiC Schottky MPS™ SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1700 V 136A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1700 V -55°C ~ 175°C - - Chassis Mount SOT-227
MBRT20060R

MBRT20060R

DIODE MOD SCHOTT 60V 100A 3TOWER

GeneSiC Semiconductor

67 -
RFQ
MBRT20060R

Datenblatt

- Three Tower Bulk Active 1 Pair Common Anode Schottky 60 V 100A 800 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V -55°C ~ 150°C - - Chassis Mount Three Tower
MUR20020CT

MUR20020CT

DIODE MODULE GP 200V 100A 2TOWER

GeneSiC Semiconductor

48 -
RFQ
MUR20020CT

Datenblatt

- Twin Tower Bulk Active 1 Pair Common Cathode Standard 200 V 100A 1.3 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Twin Tower
DDB6U85N16LHOSA1

DDB6U85N16LHOSA1

DIODE MODULE GP 1600V AGISOPACK1

Infineon Technologies

9 -
RFQ
DDB6U85N16LHOSA1

Datenblatt

- Module Bulk Obsolete 3 Independent Standard 1600 V 60A 1.44 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 5 mA @ 1600 V 150°C (Max) - - Chassis Mount AG-ISOPACK-1
MD165A16D2-BP

MD165A16D2-BP

DIODE MODULE GP 1600V 165A D2

Micro Commercial Co

80 -
RFQ
MD165A16D2-BP

Datenblatt

- D2 Bulk Active 1 Pair Common Anode Standard 1600 V 165A 1.4 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1600 V -40°C ~ 150°C - - Chassis Mount D2
MSCDC150KK70D1PAG

MSCDC150KK70D1PAG

DIODE MODULE SIC 700V 150A D1P

Microchip Technology

34 -
RFQ
MSCDC150KK70D1PAG

Datenblatt

- Module Box Active 1 Pair Common Cathode SiC (Silicon Carbide) Schottky 700 V 150A 1.8 V @ 150 A No Recovery Time > 500mA (Io) 0 ns 600 µA @ 700 V -40°C ~ 175°C - - Chassis Mount D1P
DCG130X1200NA

DCG130X1200NA

DIODE MOD SIC 1200V 64A SOT227B

IXYS

335 -
RFQ
DCG130X1200NA

Datenblatt

- SOT-227-4, miniBLOC Tube Obsolete 2 Independent SiC (Silicon Carbide) Schottky 1200 V 64A 1.8 V @ 60 A No Recovery Time > 500mA (Io) 0 ns 800 µA @ 1200 V -40°C ~ 175°C - - Chassis Mount SOT-227B
JANTX1N6511

JANTX1N6511

DIODE ARRAY GP 75V 300MA 14-CDIP

Microchip Technology

90 -
RFQ

-

- 14-CDIP (0.300", 7.62mm) Bulk Active 7 Independent Standard 75 V 300mA (DC) 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 10 ns 100 nA @ 40 V - Military MIL-PRF-19500/4 Through Hole 14-CDIP
DD400S33K2CNOSA1

DD400S33K2CNOSA1

DIODE MODULE GP 3300V AIHV130-3

Infineon Technologies

9,416 -
RFQ
DD400S33K2CNOSA1

Datenblatt

- Module Bulk Obsolete 2 Independent Standard 3300 V - 3.5 V @ 400 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV130-3
DD800S33K2CNOSA1

DD800S33K2CNOSA1

DIODE MODULE GP 3300V AIHV130-3

Infineon Technologies

6,254 -
RFQ
DD800S33K2CNOSA1

Datenblatt

- Module Bulk Obsolete 2 Independent Standard 3300 V - 3.5 V @ 800 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV130-3
DD200S33K2CC1NOSA1

DD200S33K2CC1NOSA1

DIODE MOD GP 3300V 200A AIHV73-3

Infineon Technologies

9,021 -
RFQ
DD200S33K2CC1NOSA1

Datenblatt

- Module Bulk Obsolete 1 Pair Series Connection Standard 3300 V 200A (DC) 3.5 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount A-IHV73-3
BAW56W/ZLX

BAW56W/ZLX

DIODE ARRAY GP 90V 150MA SOT-323

Nexperia USA Inc.

8,344 -
RFQ
BAW56W/ZLX

Datenblatt

- SC-70, SOT-323 Tape & Reel (TR) Obsolete 1 Pair Common Anode Standard 90 V 150mA (DC) 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 500 nA @ 80 V 150°C (Max) Automotive AEC-Q101 Surface Mount SOT-323
BAW56S/ZLX

BAW56S/ZLX

DIODE ARRAY GP 90V 250MA 6-TSSOP

Nexperia USA Inc.

4,659 -
RFQ
BAW56S/ZLX

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete 2 Pair Common Anode Standard 90 V 250mA (DC) 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 500 nA @ 80 V 150°C (Max) Automotive AEC-Q101 Surface Mount 6-TSSOP
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