Gate-Treiber

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Programmierbar Angetriebene Konfiguration Kanaltyp Anzahl der Treiber Gate-Typ Spannung - Versorgung Logikspannung – VIL, VIH Strom – Spitzenausgang (Quelle, Senke) Eingabetyp High-Side-Spannung – Max (Bootstrap) Anstiegs-/Abfallzeit (Typ) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Gate-Treiber

Gate-Treiber sind Power-Management-ICs zur Ansteuerung der Gates von Leistungsschaltern wie MOSFETs, IGBTs sowie GaN- oder SiC-Bauelementen. Sie bieten schnelles Schalten, Pegelanpassung, Isolation, Schutzfunktionen und Steuerung des Treiberstroms für Motorantriebe, Netzteile, Wechselrichter, Industrieautomation, Automobilelektronik, erneuerbare Energiesysteme und hocheffiziente Leistungswandler.

TomatoElec ist ein unabhängiger Distributor für elektronische Komponenten und liefert Gate-Treiber-ICs von führenden Herstellern wie Texas Instruments, Analog Devices, STMicroelectronics, onsemi, Infineon, Microchip, Renesas, NXP, Diodes Incorporated und Monolithic Power Systems. Kunden können in der untenstehenden Produktliste inventory, price, package, specifications, parameters and PDF datasheets prüfen und eine BOM oder RFQ für die Beschaffung von Gate-Treibern einreichen.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Programmierbar Angetriebene Konfiguration Kanaltyp Anzahl der Treiber Gate-Typ Spannung - Versorgung Logikspannung – VIL, VIH Strom – Spitzenausgang (Quelle, Senke) Eingabetyp High-Side-Spannung – Max (Bootstrap) Anstiegs-/Abfallzeit (Typ) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IR2110

IR2110

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
RFQ
IR2110

Datenblatt

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 500 V 25ns, 17ns -40°C ~ 150°C (TJ) - - Through Hole 14-DIP
IR2112

IR2112

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

0 -
RFQ
IR2112

Datenblatt

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) - - Through Hole 14-DIP
IR2113

IR2113

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
RFQ
IR2113

Datenblatt

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 6V, 9.5V 2A, 2A Non-Inverting 600 V 25ns, 17ns -40°C ~ 150°C (TJ) - - Through Hole 14-DIP
IR2117

IR2117

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies

0 -
RFQ
IR2117

Datenblatt

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side Single 1 IGBT, N-Channel MOSFET 10V ~ 20V 6V, 9.5V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) - - Through Hole 8-PDIP
IR2125

IR2125

IC GATE DRVR HIGH-SIDE 8DIP

Infineon Technologies

0 -
RFQ
IR2125

Datenblatt

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side Single 1 IGBT, N-Channel MOSFET 0V ~ 18V 0.8V, 2.2V 1.6A, 3.3A Non-Inverting 500 V 43ns, 26ns -40°C ~ 150°C (TJ) - - Through Hole 8-PDIP
IR2127

IR2127

IC GATE DRVR HI/LOW SIDE 8DIP

Infineon Technologies

0 -
RFQ
IR2127

Datenblatt

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side Single 1 IGBT, N-Channel MOSFET 12V ~ 20V 0.8V, 3V 250mA, 500mA Non-Inverting 600 V 80ns, 40ns -40°C ~ 150°C (TJ) - - Through Hole 8-PDIP
IR2130

IR2130

IC GATE DRVR HALF-BRIDGE 28DIP

Infineon Technologies

0 -
RFQ
IR2130

Datenblatt

- 28-DIP (0.600", 15.24mm) Tube Obsolete Not Verified Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 80ns, 35ns -40°C ~ 150°C (TJ) - - Through Hole 28-PDIP
IR2133J

IR2133J

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
RFQ
IR2133J

Datenblatt

- 44-LCC (J-Lead), 32 Leads Tube Obsolete Not Verified Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 90ns, 40ns 125°C (TJ) - - Surface Mount 44-PLCC, 32 Leads (16.58x16.58)
IR2153

IR2153

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
RFQ
IR2153

Datenblatt

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge Synchronous 2 N-Channel MOSFET 10V ~ 15.6V - - RC Input Circuit 600 V 80ns, 40ns -40°C ~ 150°C (TJ) - - Through Hole 8-PDIP
IR2233J

IR2233J

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
RFQ
IR2233J

Datenblatt

- 44-LCC (J-Lead), 32 Leads Tube Obsolete Not Verified Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) - - Surface Mount 44-PLCC, 32 Leads (16.58x16.58)
TPIC46L03DB

TPIC46L03DB

IC GATE DRVR LOW-SIDE 28SSOP

Texas Instruments

0 -
RFQ
TPIC46L03DB

Datenblatt

- 28-SSOP (0.209", 5.30mm Width) Tube Obsolete Not Verified Low-Side Independent 6 N-Channel MOSFET 4.5V ~ 5.5V - 1.2mA, 1.2mA Non-Inverting - 3.5µs, 3µs -40°C ~ 150°C (TJ) - - Surface Mount 28-SSOP
IR2101S

IR2101S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
RFQ
IR2101S

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IR2102

IR2102

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
RFQ
IR2102

Datenblatt

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) - - Through Hole 8-PDIP
IR2102S

IR2102S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
RFQ
IR2102S

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IR2103

IR2103

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
RFQ
IR2103

Datenblatt

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Inverting, Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) - - Through Hole 8-PDIP
IR2103S

IR2103S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
RFQ
IR2103S

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Inverting, Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IR2104STR

IR2104STR

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
RFQ
IR2104STR

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge Synchronous 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IR2106S

IR2106S

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
RFQ
IR2106S

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
98-0255

98-0255

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
RFQ
98-0255

Datenblatt

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) - - Through Hole 14-DIP
98-0317

98-0317

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies

0 -
RFQ
98-0317

Datenblatt

- 14-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) - - Surface Mount 14-SOIC
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