FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
CAB7R5A23GM4

CAB7R5A23GM4

MOSFET 2N-CH 2300V 150A

Wolfspeed, Inc.

54 -
RFQ
CAB7R5A23GM4

Datenblatt

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 10.5mOhm @ 160A, 15V 4V @ 76mA 590nC @ 15V 24400pF @ 1.5kV 510W -40°C ~ 150°C (TJ) - - Chassis Mount -
CCB016M12GM3

CCB016M12GM3

MOSFET 6N-CH 1200V 50A MODULE

Wolfspeed, Inc.

38 -
RFQ
CCB016M12GM3

Datenblatt

- Module Tray Active Silicon Carbide (SiC) 6 N-Channel - 1200V (1.2kV) 50A (Tj) 20.8mOhm @ 50A, 15V 3.9V @ 23mA 236nC @ 15V 6700pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
CAB006M12GM3T

CAB006M12GM3T

MOSFET 2N-CH 1200V 200A MODULE

Wolfspeed, Inc.

36 -
RFQ
CAB006M12GM3T

Datenblatt

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 6.9mOhm @ 200A, 15V 3.6V @ 69mA 708nC @ 15V 20400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
CCB016M12GM3T

CCB016M12GM3T

MOSFET 6N-CH 1200V 50A MODULE

Wolfspeed, Inc.

49 -
RFQ
CCB016M12GM3T

Datenblatt

- Module Box Active Silicon Carbide (SiC) 6 N-Channel - 1200V (1.2kV) 50A (Tj) 20.8mOhm @ 50A, 15V 3.9V @ 23mA 236nC @ 15V 6700pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
CAB006A12GM3T

CAB006A12GM3T

MOSFET 2N-CH 1200V 200A MODULE

Wolfspeed, Inc.

39 -
RFQ
CAB006A12GM3T

Datenblatt

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 6.9mOhm @ 200A, 15V 3.6V @ 69mA 708nC @ 15V 20400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
FBG30N04CSH

FBG30N04CSH

MOSFET 2N-CH 300V 4A 4SMD

EPC Space, LLC

46 -
RFQ
FBG30N04CSH

Datenblatt

eGaN® 4-SMD, No Lead Bulk Active GaNFET (Gallium Nitride) 2 N-Channel - 300V 4A (Tc) 404mOhm @ 4A, 5V 2.8V @ 600µA 2.6nC @ 5V 450pF @ 150V - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
CAB5R0A23GM4

CAB5R0A23GM4

MOSFET 2N-CH 2300V 150A

Wolfspeed, Inc.

30 -
RFQ
CAB5R0A23GM4

Datenblatt

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 7mOhm @ 240A, 15V 4V @ 114mA 880nC @ 15V 36600pF @ 1.5kV 710W -40°C ~ 150°C (TJ) - - Chassis Mount -
NTK3142PT1H-ON

NTK3142PT1H-ON

MOSFET P-CH

onsemi

100,800 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
NTK3142PT1H

NTK3142PT1H

MOSFET P-CH

Sanyo

20,000 -
RFQ
NTK3142PT1H

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
3LN04SS-TL-H-SY

3LN04SS-TL-H-SY

MOSFET N-CH

Sanyo

2,968,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
EFC4601-M-TR

EFC4601-M-TR

MOSFET N-CH

Sanyo

2,700,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
EFC4601-M-TR-ON

EFC4601-M-TR-ON

MOSFET N-CH

onsemi

1,895,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
SCH2822-TL-E

SCH2822-TL-E

PCH+SBD 2.5V DRIVE SERIES

onsemi

170,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
2SB808F-SPA-ON

2SB808F-SPA-ON

MOSFET N-CH

onsemi

35,003 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
2SB808F-SPA

2SB808F-SPA

MOSFET N-CH

Sanyo

21,994 -
RFQ
2SB808F-SPA

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
FDS6900AS-G

FDS6900AS-G

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

onsemi

3,346 -
RFQ

-

PowerTrench®, SyncFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6.9A, 8.2A 27mOhm @ 6.9A, 10V 3V @ 250µA, 3V @ 1mA 15nC @ 10V 600pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
5HP01M-TL-EX

5HP01M-TL-EX

MOSFET P-CH 50V 0.07A MCP3

onsemi

6,000 -
RFQ
5HP01M-TL-EX

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
DMN63D0LT-7

DMN63D0LT-7

MOSFET N-CH 100V SOT523

Diodes Incorporated

3,000 -
RFQ

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
MCH6646-TL-E

MCH6646-TL-E

NCH+NCH 1.8 DRIVE SERIES

onsemi

5,853,000 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - -
NTND31211PZTAG

NTND31211PZTAG

MOSFET P-CH

onsemi

597,651 -
RFQ
NTND31211PZTAG

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - -
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