FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
APTM50AM19FG

APTM50AM19FG

MOSFET 2N-CH 500V 163A SP6

Microchip Technology

4,054 -
RFQ
APTM50AM19FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 163A 22.5mOhm @ 81.5A, 10V 5V @ 10mA 492nC @ 10V 22400pF @ 25V 1136W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
VMM650-01F

VMM650-01F

MOSFET 2N-CH 100V 680A Y3-LI

IXYS

8,899 -
RFQ

-

HiPerFET™ Y3-Li Box Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 680A 2.2mOhm @ 500A, 10V 4V @ 30mA 1440nC @ 10V - - -40°C ~ 150°C (TJ) - - Chassis Mount Y3-Li
APTM10DUM02G

APTM10DUM02G

MOSFET 2N-CH 100V 495A SP6

Microchip Technology

6,334 -
RFQ
APTM10DUM02G

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 495A 2.5mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM120A20DG

APTM120A20DG

MOSFET 2N-CH 1200V 50A SP6

Microchip Technology

2,973 -
RFQ
APTM120A20DG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 50A 240mOhm @ 25A, 10V 5V @ 6mA 600nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM50HM38FG

APTM50HM38FG

MOSFET 4N-CH 500V 90A SP6

Microchip Technology

9,865 -
RFQ
APTM50HM38FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 90A 45mOhm @ 45A, 10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V 694W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM120A20SG

APTM120A20SG

MOSFET 2N-CH 1200V 50A SP6

Microchip Technology

6,405 -
RFQ
APTM120A20SG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 50A 240mOhm @ 25A, 10V 5V @ 6mA 600nC @ 10V 15200pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
MSCC60VRM45TAPG

MSCC60VRM45TAPG

MOSFET 600V 40A SP6-P

Microchip Technology

8,432 -
RFQ
MSCC60VRM45TAPG

Datenblatt

- Module Tube Active - - - 600V 40A (Tc) - - - - - - - - Chassis Mount SP6-P
APTM120DU15G

APTM120DU15G

MOSFET 2N-CH 1200V 60A SP6

Microchip Technology

4,944 -
RFQ
APTM120DU15G

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM10AM02FG

APTM10AM02FG

MOSFET 2N-CH 100V 495A SP6

Microchip Technology

5,423 -
RFQ
APTM10AM02FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 100V 495A 2.5mOhm @ 200A, 10V 4V @ 10mA 1360nC @ 10V 40000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM20HM08FG

APTM20HM08FG

MOSFET 4N-CH 200V 208A SP6

Microchip Technology

2,285 -
RFQ
APTM20HM08FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 200V 208A 10mOhm @ 104A, 10V 5V @ 5mA 280nC @ 10V 14400pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM50AM24SCG

APTM50AM24SCG

MOSFET 2N-CH 500V 150A SP6

Microchip Technology

9,155 -
RFQ
APTM50AM24SCG

Datenblatt

- SP6 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 500V 150A 28mOhm @ 75A, 10V 5V @ 6mA 434nC @ 10V 19600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTC60TAM24TPG

APTC60TAM24TPG

MOSFET 6N-CH 600V 95A SP6-P

Microchip Technology

4,923 -
RFQ
APTC60TAM24TPG

Datenblatt

CoolMOS™ SP6 Tray Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 95A 24mOhm @ 47.5A, 10V 3.9V @ 5mA 300nC @ 10V 14400pF @ 25V 462W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
APTM10HM05FG

APTM10HM05FG

MOSFET 4N-CH 100V 278A SP6

Microchip Technology

3,148 -
RFQ
APTM10HM05FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 100V 278A 5mOhm @ 125A, 10V 4V @ 5mA 700nC @ 10V 20000pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM50AM17FG

APTM50AM17FG

MOSFET 2N-CH 500V 180A SP6

Microchip Technology

6,970 -
RFQ
APTM50AM17FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 180A 20mOhm @ 90A, 10V 5V @ 10mA 560nC @ 10V 28000pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM50HM35FG

APTM50HM35FG

MOSFET 4N-CH 500V 99A SP6

Microchip Technology

7,410 -
RFQ
APTM50HM35FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 500V 99A 39mOhm @ 49.5A, 10V 5V @ 5mA 280nC @ 10V 14000pF @ 25V 781W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM100AM90FG

APTM100AM90FG

MOSFET 2N-CH 1000V 78A SP6

Microchip Technology

6,139 -
RFQ
APTM100AM90FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1000V (1kV) 78A 105mOhm @ 39A, 10V 5V @ 10mA 744nC @ 10V 20700pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM120A15FG

APTM120A15FG

MOSFET 2N-CH 1200V 60A SP6

Microchip Technology

6,464 -
RFQ
APTM120A15FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 60A 175mOhm @ 30A, 10V 5V @ 10mA 748nC @ 10V 20600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
APTM100H18FG

APTM100H18FG

MOSFET 4N-CH 1000V 43A SP6

Microchip Technology

3,903 -
RFQ
APTM100H18FG

Datenblatt

- SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1000V (1kV) 43A 210mOhm @ 21.5A, 10V 5V @ 5mA 372nC @ 10V 10400pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
CAB5R0A23GM4T

CAB5R0A23GM4T

MOSFET 2N-CH 2300V 150A

Wolfspeed, Inc.

6,127 -
RFQ
CAB5R0A23GM4T

Datenblatt

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 2300V (2.3kV) 150A 7mOhm @ 240A, 15V 4V @ 114mA 880nC @ 15V 36600pF @ 1.5kV 710W -40°C ~ 150°C (TJ) - - Chassis Mount -
APTM120H29FG

APTM120H29FG

MOSFET 4N-CH 1200V 34A SP6

Microchip Technology

8,924 -
RFQ
APTM120H29FG

Datenblatt

POWER MOS 7® SP6 Bulk Active MOSFET (Metal Oxide) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 34A 348mOhm @ 17A, 10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V 780W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
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