FET-, MOSFET-Arrays

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Technologie Konfiguration FET-Funktion Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Eingangskapazität (Ciss) (Max) @ Vds Leistung – Max Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
DMP1046UFDB-7

DMP1046UFDB-7

MOSFET 2P-CH 12V 3.8A 6UDFN

Diodes Incorporated

16,256 -
RFQ
DMP1046UFDB-7

Datenblatt

- 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 12V 3.8A 61mOhm @ 3.6A, 4.5V 1V @ 250µA 17.9nC @ 8V 915pF @ 6V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
SI1902CDL-T1-GE3

SI1902CDL-T1-GE3

MOSFET 2N-CH 20V 1.1A SC70-6

Vishay Siliconix

13,560 -
RFQ
SI1902CDL-T1-GE3

Datenblatt

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 1.1A 235mOhm @ 1A, 4.5V 1.5V @ 250µA 3nC @ 10V 62pF @ 10V 420mW -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
SSM6N40TU,LF

SSM6N40TU,LF

MOSFET 2N-CH 30V 1.6A UF6

Toshiba Semiconductor and Storage

7,754 -
RFQ
SSM6N40TU,LF

Datenblatt

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 30V 1.6A (Ta) 122mOhm @ 1A, 10V 2.6V @ 1mA 5.1nC @ 10V 180pF @ 15V 500mW (Ta) 150°C - - Surface Mount UF6
SSM6L40TU,LF

SSM6L40TU,LF

MOSFET N/P-CH 30V 1.6A UF6

Toshiba Semiconductor and Storage

112,270 -
RFQ
SSM6L40TU,LF

Datenblatt

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 4V Drive 30V 1.6A (Ta), 1.4A (Ta) 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V 2.6V @ 1mA, 2V @ 1mA 5.1nC @ 10V, 2.9nC @ 10V 180pF @ 15V, 120pF @ 15V 500mW (Ta) 150°C - - Surface Mount UF6
NTJD4105CT1G

NTJD4105CT1G

MOSFET N/P-CH 20V/8V 0.63A SC88

onsemi

19,552 -
RFQ
NTJD4105CT1G

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V, 8V 630mA, 775mA 375mOhm @ 630mA, 4.5V 1.5V @ 250µA 3nC @ 4.5V 46pF @ 20V 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
SSM6L39TU,LF

SSM6L39TU,LF

MOSFET N/P-CH 20V 0.8A UF6

Toshiba Semiconductor and Storage

3,031 -
RFQ
SSM6L39TU,LF

Datenblatt

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.8V Drive 20V 800mA 143mOhm @ 600MA, 4V 1V @ 1mA - 268pF @ 10V 500mW 150°C (TJ) - - Surface Mount UF6
MC7252KDW-TP

MC7252KDW-TP

MOSFET N/P-CH 60V 0.34A SOT363

Micro Commercial Co

69,473 -
RFQ
MC7252KDW-TP

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V, 50V 340mA, 180mA 5Ohm @ 500mA, 10V, 8Ohm @ 100mA, 10V 2.5V @ 1mA, 2V @ 250µA - 40pF, 30pF @ 10V, 5V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
SQ1912EH-T1_GE3

SQ1912EH-T1_GE3

MOSFET 2N-CH 20V 0.8A SC70-6

Vishay Siliconix

24,615 -
RFQ
SQ1912EH-T1_GE3

Datenblatt

TrenchFET® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 800mA (Tc) 280mOhm @ 1.2A, 4.5V 1.5V @ 250µA 1.15nC @ 4.5V 75pF @ 10V 1.5W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SC-70-6
SSM6N67NU,LF

SSM6N67NU,LF

MOSFET 2N-CH 30V 4A 6DFN

Toshiba Semiconductor and Storage

18,284 -
RFQ
SSM6N67NU,LF

Datenblatt

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A (Ta) 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2nC @ 4.5V 310pF @ 15V 2W (Ta) 150°C - - Surface Mount 6-µDFN (2x2)
DMC2004DWK-7

DMC2004DWK-7

MOSFET N/P-CH 20V 0.54A SOT363

Diodes Incorporated

251,997 -
RFQ
DMC2004DWK-7

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 540mA, 430mA 550mOhm @ 540mA, 4.5V 1V @ 250µA - 150pF @ 16V 250mW -65°C ~ 150°C (TJ) - - Surface Mount SOT-363
DMG1029SVQ-7

DMG1029SVQ-7

MOSFET N/P-CH 60V 0.5A SOT563

Diodes Incorporated

5,139 -
RFQ
DMG1029SVQ-7

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 60V 500mA (Ta), 360mA (Ta) 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V 2.5V @ 250µA, 3V @ 250µA 0.3nC @ 4.5V, 0.28nC @ 4.5V 30pF @ 25V, 25pF @ 25V 450mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-563
EM6K6T2R

EM6K6T2R

MOSFET 2N-CH 20V 0.3A EMT6

Rohm Semiconductor

5,795 -
RFQ
EM6K6T2R

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 300mA 1Ohm @ 300mA, 4V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
EM6K33T2R

EM6K33T2R

MOSFET 2N-CH 50V 0.2A EMT6

Rohm Semiconductor

38,646 -
RFQ
EM6K33T2R

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 1V @ 1mA - 25pF @ 10V 150mW 150°C (TJ) - - Surface Mount EMT6
DMN2019UTS-13

DMN2019UTS-13

MOSFET 2N-CH 20V 5.4A 8TSSOP

Diodes Incorporated

23,492 -
RFQ
DMN2019UTS-13

Datenblatt

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.4A 18.5mOhm @ 7A, 10V 950mV @ 250µA 8.8nC @ 4.5V 143pF @ 10V 780mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
SSM6N357R,LF

SSM6N357R,LF

MOSFET 2N-CH 60V 0.65A 6TSOPF

Toshiba Semiconductor and Storage

10,059 -
RFQ
SSM6N357R,LF

Datenblatt

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 650mA (Ta) 1.8Ohm @ 150mA, 5V 2V @ 1mA 1.5nC @ 5V 60pF @ 12V 1.5W (Ta) 150°C - - Surface Mount 6-TSOP-F
PJS6809_S1_00001

PJS6809_S1_00001

MOSFET 2P-CH 30V 2.6A SOT23-6

Panjit International Inc.

1,561 -
RFQ
PJS6809_S1_00001

Datenblatt

- SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 2.6A (Ta) 115mOhm @ 2.6A, 10V 2.1V @ 250µA 9.8nC @ 10V 396pF @ 15V 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
SSM6N62TU,LF

SSM6N62TU,LF

MOSFET 2N-CH 20V 0.8A UF6

Toshiba Semiconductor and Storage

15,023 -
RFQ
SSM6N62TU,LF

Datenblatt

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 20V 800mA (Ta) 85mOhm @ 800mA, 4.5V 1V @ 1mA 2nC @ 4.5V 177pF @ 10V 500mW (Ta) 150°C - - Surface Mount UF6
DMN2029USD-13

DMN2029USD-13

MOSFET 2N-CH 20V 5.8A 8SO

Diodes Incorporated

12,783 -
RFQ
DMN2029USD-13

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 5.8A 25mOhm @ 6.5A, 4.5V 1.5V @ 250µA 18.6nC @ 8V 1171pF @ 10V 1.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
DMN3032LFDB-7

DMN3032LFDB-7

MOSFET 2N-CH 30V 6.2A 6UDFN

Diodes Incorporated

8,097 -
RFQ
DMN3032LFDB-7

Datenblatt

- 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6.2A 30mOhm @ 5.8A, 10V 2V @ 250µA 10.6nC @ 10V 500pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
DMN601DMK-7

DMN601DMK-7

MOSFET 2N-CH 60V 0.51A SOT26

Diodes Incorporated

52,387 -
RFQ

-

- SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 510mA 2.4Ohm @ 200mA, 10V 2.5V @ 1mA 0.304nC @ 4.5V 50pF @ 25V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-26
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