Bipolartransistor-Arrays, vorgespannt

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Widerstand - Basis (R1) Widerstand - Emitter-Basis (R2) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) Frequenz - Übergang Leistung – Max Klasse Qualifizierung Montageart Lieferant Gerätepaket

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Vorbeschaltete Bipolartransistor-Arrays

TomatoElec liefert vorbeschaltete Bipolartransistor-Arrays für Industrie, Automotive, Steuerung und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst häufig verwendete BJT-Array-Produkte für Schalt-, Signalsteuerungs- und kompakte Schaltungsintegrationsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung vorbeschalteter Bipolartransistor-Arrays und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von Transistor-Arrays, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus Transistortyp Strom - Kollektor (Ic) (Max) Spannung - Kollektor-Emitter-Durchbruch (Max) Widerstand - Basis (R1) Widerstand - Emitter-Basis (R2) DC-Stromverstärkung (hFE) (Min) @ Ic, Vce Vce-Sättigung (Max) @ Ib, Ic Strom - Kollektor-Abschaltung (Max) Frequenz - Übergang Leistung – Max Klasse Qualifizierung Montageart Lieferant Gerätepaket
RN1910FE,LF(CT

RN1910FE,LF(CT

TRANS 2NPN PREBIAS 0.1W ES6

Toshiba Semiconductor and Storage

202 -
RFQ
RN1910FE,LF(CT

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 4.7kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 100mW - - Surface Mount ES6
PRMD3Z

PRMD3Z

TRANS PREBIAS 1NPN 1PNP 50V 6DFN

Nexperia USA Inc.

310 -
RFQ
PRMD3Z

Datenblatt

- 6-XFDFN Exposed Pad Tape & Reel (TR) Active 1 NPN Pre-Biased, 1 PNP 100mA 50V 10kOhms 10kOhms 30 @ 5mA, 5V 150mV @ 500µA, 10mA 1µA 230MHz 480mW Automotive AEC-Q101 Surface Mount DFN1412-6
PIMH9,115

PIMH9,115

TRANS PREBIAS 2NPN 50V 6TSOP

Nexperia USA Inc.

300 -
RFQ
PIMH9,115

Datenblatt

- SC-74, SOT-457 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 100 @ 5mA, 5V 100mV @ 250µA, 5mA 1µA - 600mW - - Surface Mount 6-TSOP
RN4601(TE85L,F)

RN4601(TE85L,F)

TRANS NPN/PNP PREBIAS 0.3W SM6

Toshiba Semiconductor and Storage

203 -
RFQ
RN4601(TE85L,F)

Datenblatt

- SC-74, SOT-457 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms 4.7kOhms 30 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 300mW - - Surface Mount SM6
RN4901FE,LF(CT

RN4901FE,LF(CT

PNP + NPN BRT Q1BSR4.7KOHM Q1BER

Toshiba Semiconductor and Storage

330 -
RFQ
RN4901FE,LF(CT

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms 4.7kOhms 30 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 200MHz, 250MHz 100mW - - Surface Mount ES6
UMD4NTR

UMD4NTR

TRANS NPN/PNP PREBIAS UMT6

Rohm Semiconductor

860 -
RFQ
UMD4NTR

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms, 10kOhms 47kOhms 68 @ 5mA, 5V 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA 500nA 250MHz 150mW, 120mW - - Surface Mount UMT6
PUMD48,115

PUMD48,115

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Nexperia USA Inc.

810 -
RFQ
PUMD48,115

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms, 2.2kOhms 47kOhms 80 @ 5mA, 5V / 100 @ 10mA, 5V 150mV @ 500µA, 10mA / 100mV @ 250µA, 5mA 1µA - 300mW - - Surface Mount 6-TSSOP
PUMD10,125

PUMD10,125

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Nexperia USA Inc.

206 -
RFQ
PUMD10,125

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 2.2kOhms 47kOhms 100 @ 10mA, 5V 100mV @ 250µA, 5mA 1µA - 200mW - - Surface Mount 6-TSSOP
PUMD6,115

PUMD6,115

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Nexperia USA Inc.

127 -
RFQ
PUMD6,115

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms - 200 @ 1mA, 5V 100mV @ 250µA, 5mA 1µA - 300mW Automotive AEC-Q100 Surface Mount 6-TSSOP
PRMH13Z

PRMH13Z

TRANS PREBIAS 2NPN 50V DFN1412-6

Nexperia USA Inc.

728 -
RFQ
PRMH13Z

Datenblatt

- 6-XFDFN Exposed Pad Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 4.7kOhms 47kOhms 100 @ 10mA, 5V 100mV @ 250µA, 5mA 1µA 230MHz 480mW Automotive AEC-Q101 Surface Mount DFN1412-6
SMUN5315DW1T1G

SMUN5315DW1T1G

TRANS PREBIAS 1NPN 1PNP 50V SC88

onsemi

432 -
RFQ
SMUN5315DW1T1G

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 5mA, 10V 250mV @ 300µA, 10mA 500nA - 187mW Automotive AEC-Q101 Surface Mount SC-88/SC70-6/SOT-363
PRMD10Z

PRMD10Z

TRANS PREBIAS 1NPN 1PNP 50V 6DFN

Nexperia USA Inc.

160 -
RFQ
PRMD10Z

Datenblatt

- 6-XFDFN Exposed Pad Tape & Reel (TR) Active 1 NPN Pre-Biased, 1 PNP 100mA 50V 2.2kOhms 47kOhms 100 @ 10mA, 5V 100mV @ 250µA, 5mA 100nA 230MHz 480mW Automotive AEC-Q101 Surface Mount DFN1412-6
RN4989(TE85L,F)

RN4989(TE85L,F)

NPN + PNP BRT Q1BSR=47KOHM Q1BER

Toshiba Semiconductor and Storage

198 -
RFQ
RN4989(TE85L,F)

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 47kOhms 22kOhms 70 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250MHz, 200MHz 200mW - - Surface Mount US6
RN4988(TE85L,F)

RN4988(TE85L,F)

NPN + PNP BRT Q1BSR=22KOHM Q1BER

Toshiba Semiconductor and Storage

180 -
RFQ
RN4988(TE85L,F)

Datenblatt

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 22kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 500nA 250MHz, 200MHz 200mW - - Surface Mount US6
RN1710JE(TE85L,F)

RN1710JE(TE85L,F)

NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=

Toshiba Semiconductor and Storage

105 -
RFQ
RN1710JE(TE85L,F)

Datenblatt

- SOT-553 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 100mA 50V 4.7kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 100mW - - Surface Mount ESV
RN4607(TE85L,F)

RN4607(TE85L,F)

TRANS NPN/PNP PREBIAS 0.3W SM6

Toshiba Semiconductor and Storage

699 -
RFQ
RN4607(TE85L,F)

Datenblatt

- SC-74, SOT-457 Tape & Reel (TR) Active 1 NPN, 1 PNP - Pre-Biased (Dual) 100mA 50V 10kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 300mW - - Surface Mount SM6
RN1705JE(TE85L,F)

RN1705JE(TE85L,F)

TRANS 2NPN PREBIAS 0.1W ESV

Toshiba Semiconductor and Storage

460 -
RFQ
RN1705JE(TE85L,F)

Datenblatt

- SOT-553 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 100mA 50V 2.2kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 100mW - - Surface Mount ESV
RN1611(TE85L,F)

RN1611(TE85L,F)

TRANS 2NPN PREBIAS 0.3W SM6

Toshiba Semiconductor and Storage

305 -
RFQ
RN1611(TE85L,F)

Datenblatt

- SC-74, SOT-457 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 100mA 50V 10kOhms - 120 @ 1mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 250MHz 300mW - - Surface Mount SM6
RN2606(TE85L,F)

RN2606(TE85L,F)

TRANS 2PNP PREBIAS 0.3W SM6

Toshiba Semiconductor and Storage

670 -
RFQ
RN2606(TE85L,F)

Datenblatt

- SC-74, SOT-457 Tape & Reel (TR) Active 2 PNP - Pre-Biased (Dual) 100mA 50V 4.7kOhms 47kOhms 80 @ 10mA, 5V 300mV @ 250µA, 5mA 100nA (ICBO) 200MHz 300mW - - Surface Mount SM6
EMH61T2R

EMH61T2R

TRANS 2NPN PREBIAS 0.15W EMT6

Rohm Semiconductor

307 -
RFQ
EMH61T2R

Datenblatt

- SOT-563, SOT-666 Tape & Reel (TR) Active 2 NPN - Pre-Biased (Dual) 50mA 50V 10kOhms 10kOhms 35 @ 5mA, 10V 150mV @ 500µA, 5mA 500nA 250MHz 150mW - - Surface Mount EMT6
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